MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPE HVIPM (High Voltage Intelligent Power Module) PM1200HCE330-1 ● IC ................................................................ 1200A ● VCES ....................................................... 3300V ● Insulated Type ● 1-element in a Pack ● AISiC Baseplate ● Monolithic Gate Drive ● Protection Logic : OC/OT/UV (Over Current / Over Temperature / Under supply Voltage) APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING Dimensions in mm 61.5 ±0.3 6-M8 NUTS Screwing depth 16.5mm 61.5 ±0.3 29.6 13 41 C C E E E EMITTER ELECTRODE E (15) G 40 124 ±0.3 140 ±0.3 C (15) LABEL 18.3 15.85 COLLECTOR ELECTRODE CONTROL CONNECTOR CONTROL CONNECTOR FEMALE TYPE: IL-AG5-6S-S3C1 2-M3 Screwing (14) 45 57 ±0.3 57 ±0.3 (16.5) 8 - φ6.5 MOUNTING HOLES 17 57 ±0.3 190 ±0.3 CONTROL CONNECTOR TERMINAL ARREANGEMENT 38 9.3 +1 0 36.9 11 V1 NC VC CI FO NC 23 6 5 4 3 2 1 27.1 30.9 2.6 HVIPM (High Voltage Intelligent Power Module) Jul. 2005 MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPE HVIPM (High Voltage Intelligent Power Module) INTERNAL FUNCTIONS BLOCK DIAGRAM E C G Main circuit ASIC IGBT Gate driver Control logic CI FWDi OC/SC Input interface R.T.C (Real Time Control) Current sensor Connector FO Protection logic VC UV OT Thermal sensor VD detector Control circuit ground to control circuit V1 E MAXIMUM RATINGS INVERTER PART Symbol VCES ±IC ±ICP PC Viso Tj Tstg Item Collector-emitter voltage Collector current Collector current (peak) Maximum power dissipation Isolation voltage Junction temperature Storage temperature Conditions Tj = 25°C TC = 25°C TC = 25°C TC = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1min. Ratings 3300 1200 2400 12500 6000 –40 ~ +150 –40 ~ +115 Unit V A A W V °C °C Ratings 26.4 26.4 26.4 20.0 Unit V V V mA CONTROL PART Symbol VD VCIN VFO IFO Item Control supply voltage Input voltage Fault output supply voltage Fault output current Conditions Applied between : V1–VC Applied between : C1–VC Applied between : FO–VC Sink current of FO terminal HVIPM (High Voltage Intelligent Power Module) Jul. 2005 MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPE HVIPM (High Voltage Intelligent Power Module) ELECTRICAL CHARACTERISTICS INVERTER PART Item Symbol ICES Collector cutoff current VCE(sat) Collector-emitter saturation voltage VEC ton Eon toff Eoff trr Erec Emitter-collector voltage Turn-on time Turn-on switching energy Turn-off time Turn-off switching energy Reverse recovery time Reverse recovery energy Conditions VCE = VCES, Tj = 25°C IC = 1200A, VD = 24V, VCIN = 0V Tj = 25°C, at the main terminals IC = 1200A, VD = 24V, VCIN = 0V Tj = 125°C, at the main terminals –IC = 1200A, VD = 24V, VCIN = 24V Tj = 25°C, at the main terminals –IC = 1200A, VD = 24V, VCIN = 24V Tj = 125°C, at the main terminals VCC = 1500V, IC = 1200A VD = 24V, VCIN = 0V ↔ 24V Tj = 125°C, Ls = 100nH Inductive load Min — Limits Typ — Max 15 — 3.05 3.95 — 3.40 — — 2.90 3.75 — 2.80 — — — — — — — — 1.80 — 1.60 — 0.95 6.00 — 6.00 — 1.40 — Unit mA V V µs J/pulse µs J/pulse µs J/pulse CONTROL PART Symbol VD ID Vth(ON) Vth(OFF) tFO OC OT Otr UV U Vr Item Conditions Control supply voltage Circuit current Input ON threshold voltage Input OFF threshold voltage Fault output pulse width Over current trip level Applied between : V1–VC VD = 24V, Tj = 25°C VD = 24V Tj = –25°C ~ 125°C Over temperature protection Baseplate temperature detection Supply circuit under voltage protection Tj = –25°C ~ 125°C Applied between : C1–VC Min 21.6 — 6.1 10.5 — 2200 103 88 19.2 — Limits Typ 24.0 80 6.7 11.1 100 — 113 98 20.0 20.5 Max 26.4 120 7.3 11.7 200 — 123 108 20.8 — Unit V mA V V µs A °C °C V V HVIPM (High Voltage Intelligent Power Module) Jul. 2005 MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPE HVIPM (High Voltage Intelligent Power Module) THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K Min — — — Limits Typ — — 7.5 Max 10.0 20.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Mounting torque M — CTI da ds Conditions M8 : Main terminals screw M6 : Mounting screw M3 : Auxiliary terminals screw Mass Comparative tracking index Clearance distance in air Creepage distance along surface Min 7.0 3.0 0.4 — 600 19.5 32.0 Limits Typ — — — 1.5 — — — Max 13.0 6.0 0.6 — — — — Unit N·m kg — mm mm RECOMMENDED CONDITIONS FOR USE Symbol VCC VD VCIN(ON) VCIN(OFF) fPWM tdead Item DC link voltage Control supply voltage Input ON voltage Input OFF voltage PWM input frequency Dead time Conditions Applied between : C–E terminals Applied between : V1–VC Applied between : C1–VC 3 sinusoidal PWM control Reference at IPM’s input signals Recommended values Max Min Typ — 2200 1500 25.2 22.8 24.0 — — 4.0 — — 16.0 — 2.0 0.5 — — 8.0 Unit V V V V kHz µs HVIPM (High Voltage Intelligent Power Module) Jul. 2005 MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPE HVIPM (High Voltage Intelligent Power Module) PERFORMANCE CURVES FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6 6 VD = 24V, VCIN = 0V, at the main terminals VD = 24V, VCIN = 24V, at the main terminals EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 4 3 2 1 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 2000 Tj = 25°C Tj = 125°C 0 2400 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT (A) NEGATIVE COLLECTOR CURRENT (A) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 3 VCC = 1500V, VD = 24V VCIN = 0V ↔ 24V Tj = 125°C, Inductive load 2.5 7 5 Eon VCC = 1500V, VD = 24V VCIN(on) = 0V ↔ 24V Tj = 125°C, Inductive load 3 2 Eoff 2 1.5 Erec 1 0.5 SWITCHING TIMES (µs) SWITCHING ENERGIES (J/pulse) 5 101 7 5 toff 3 ton 2 100 7 5 tr tf 3 2 0 0 400 800 1200 1600 2000 COLLECTOR CURRENT (A) 2400 10-1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 COLLECTOR CURRENT (A) HVIPM (High Voltage Intelligent Power Module) Jul. 2005 MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPE HVIPM (High Voltage Intelligent Power Module) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 VCC = 1500V, VD = 24V VCIN = 0V ↔ 24V Tj = 125°C, Inductive load 7 5 3 3 2 2 101 103 Irr 7 5 7 5 3 3 2 2 100 102 7 5 7 5 trr 3 3 2 2 10-1 1 10 3000 2 3 5 7 102 2 3 5 7 103 101 2 3 1.0 0.8 0.6 0.4 0.2 TIME (s) REVERSE BIAS SAFE OPERATING AREA (RBSOA) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 3000 REVERSE RECOVERY CURRENT (A) COLLECTOR CURRENT (A) Single Pulse, TC = 25°C Rth(j–c)Q = 10K/kW Rth(j–c)R = 20K/kW NEGATIVE COLLECTOR CURRENT (A) VCC ≤ 2200V, VD = 24V Tj = 125°C 2000 1500 1000 500 0 1.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 5 7 104 2500 0 REVERSE RECOVERY CURRENT (A) REVERSE RECOVERY TIME (µs) 7 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1000 2000 3000 COLLECTOR-EMITTER VOLTAGE (V) 4000 VCC ≤ 2200V, di/dt ≤ 5400A/µs Tj = 125°C 2500 2000 1500 1000 500 0 0 1000 2000 3000 4000 EMITTER-COLLECTOR VOLTAGE (V) HVIPM (High Voltage Intelligent Power Module) Jul. 2005