MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE PM75B6L1C060 FEATURE a) Adopting new 5th generation Full-Gate CSTBTTM chip b) Error output signal is possible from all each protection upper and lower IGBT c) The mounting surface is 90mm×50mm about 30% less than B6LA type • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage APPLICATION Photo voltaic power conditioner PACKAGE OUTLINES Dimensions in mm Terminal code 1. VUPC 8. VVP1 2. UFo 9. NC 3. UP 10. NC 4. VUP1 11. NC 5. VVPC 12. NC 6. VFo 13. VNC 7. VP 14. VN1 1 15. Br 16. UN 17. VN 18. WN 19. Fo Jan. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM VNC W N Br Fo VN1 VN UN NC NC NC NC VP VVP1 VVPC VFo 1.5k GND IN Fo UP VUP1 VUPC UFo 1.5k 1.5k Vcc GND IN GND SC OT OUT Fo Vcc GND SC OT OUT GND IN Fo Vcc GND SC OT OUT B GND IN Fo Vcc GND IN GND SC OT OUT N Fo Vcc GND SC OT OUT W V GND IN Fo Vcc GND SC OT OUT U P MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES IC ICRM Ptot IE IERM Tj Parameter Collector-Emitter Voltage Collector Current Total Power Dissipation Emitter Current (Free wheeling Diode Forward current) Conditions VD=15V, VCIN=15V TC=25°C Pulse TC=25°C TC=25°C Pulse Junction Temperature Ratings 600 75 150 201 75 150 -20 ~ +150 Unit V Ratings 600 75 150 201 75 150 75 600 -20 ~ +150 Unit V A W A °C *: Tc measurement point is just under the chip. CONVERTER PART Symbol VCES IC ICRM Ptot IE IERM IF VR(DC) Tj Parameter Collector-Emitter Voltage Collector Current Total Power Dissipation Emitter Current (Free wheeling Diode Forward current) Di Forward Current Di Rated DC Reverse Voltage Junction Temperature Conditions VD=15V, VCIN=15V TC=25°C Pulse TC=25°C TC=25°C Pulse TC=25°C TC=25°C A W A A V °C *: Tc measurement point is just under the chip. 2 Jan. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE CONTROL PART Symbol VD Parameter Supply Voltage VCIN Input Voltage VFO IFO Fault Output Supply Voltage Fault Output Current Conditions Applied between : VUP1-VUPC, VVP1-VVPC,VN1-VNC Applied between : UP-VUPC, VP-VVPC, UN･VN･WN･Br-VNC Applied between : UFo-VUPC, VFo-VVPC, Fo-VNC Sink current at UFo, VFo, Fo terminals Ratings 20 Unit V 20 V 20 20 V mA Conditions VD =13.5V ~ 16.5V Inverter Part, Tj =+125°C Start Applied between : P-N, Surge value Ratings Unit 450 V 500 -40 ~ +125 2500 V °C V TOTAL SYSTEM Symbol VCC(PROT) VCC(surge) Tstg Visol Parameter Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature Isolation Voltage 60Hz, Sinusoidal, RMS, Charged part to Base, AC 1min. *: TC measurement point is just under the chip. THERMAL RESISTANCE Symbol Parameter Rth(j-c)Q Rth(j-c)D Rth(j-c)Q Rth(j-c)D Rth(j-c)D Thermal Resistance Rth(c-s) Contact Thermal Resistance Conditions Inverter, IGBT (per 1 element) Inverter, FWDi (per 1 element) Converter, IGBT (per 1 element) Converter, FWDi (per 1 element) Converter, Di (per 1 element) (Note.1) (Note.1) (Note.1) (Note.1) (Note.1) Case to heat sink, (per 1 module) Thermal grease applied (Note.1) Min. - Limits Typ. - Max. 0.62 1.06 0.62 1.06 1.06 - 0.06 - Unit K/W Note.1: If you use this value, Rth(s-a) should be measured just under the chips. 3 Jan. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCEsat VEC ton trr tc(on) toff tc(off) ICES Parameter Conditions Collector-Emitter Saturation Voltage VD=15V, IC=75A VCIN=0V, Pulsed Emitter-Collector Voltage IE=75A, VD=15V, VCIN= 15V Switching Time VD=15V, VCIN=0V← →15V VCC=300V, IC=75A Tj=125°C Inductive Load Collector-Emitter Cut-off Current (Fig. 1) Tj=25°C Tj=125°C (Fig. 2) (Fig. 3,4) VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Tj=25°C Tj=125°C Min. 0.1 - Limits Typ. 2.2 2.2 2.4 0.5 0.1 0.15 1.1 0.2 - Max. 2.7 2.7 3.3 1.2 0.2 0.3 2.0 0.4 1 10 Min. 0.1 - Limits Typ. 2.2 2.2 2.4 2.4 0.5 0.1 0.15 1.1 0.2 - Max. 2.7 2.7 3.3 3.3 1.2 0.2 0.3 2.0 0.4 1 10 Limits Typ. 6.5 1.6 1.5 2.0 - Max. 12 4.0 1.8 2.3 - 0.2 - Unit V V μs mA CONVERTER PART Symbol VCEsat VEC VFM ton trr tc(on) toff tc(off) ICES Parameter Conditions Collector-Emitter Saturation Voltage VD=15V, IC=75A VCIN=0V, Pulsed Emitter-Collector Voltage Di Forward Voltage IE=75A, VD=15V, VCIN= 15V IF=75A Switching Time VD=15V, VCIN=0V← →15V VCC=300V, IC=75A Tj=125°C Inductive Load Collector-Emitter Cut-off Current (Fig. 1) VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Tj=25°C Tj=125°C (Fig. 2) (Fig. 3,4) Tj=25°C Tj=125°C Unit V V V μs mA CONTROL PART Symbol Parameter Conditions -20≤Tj≤125°C, VD=15V (Fig. 3, 6) Min. 1.2 1.7 112 VD=15V (Fig. 3, 6) - VN1-VNC V*P1-V*PC ID Circuit Current VD=15V, VCIN=15V Vth(ON) Vth(OFF) SC Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Applied between : UP-VUPC, VP-VVPC, UN･VN･WN･Br -VNC toff(SC) OT Trip level 135 Over Temperature Protection Detect Temperature of IGBT chip OT(hys) Hysteresis 20 UVt Trip level 11.5 12.0 12.5 Supply Circuit Under-Voltage -20≤Tj≤125°C Protection Reset level 12.5 UVr IFO(H) 0.01 (Note.2) Fault Output Current VD=15V, VFO=15V 10 15 IFO(L) tFO Fault Output Pulse Width VD=15V (Note.2) 1.0 1.8 Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it. 4 Unit mA V A μs °C V mA ms Jan. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE MECHANICAL RATINGS AND CHARACTERISTICS Symbol Mt m Parameter Mounting Torque Weight Conditions Mounting part screw : M4 - Min. 1.4 - Limits Typ. 1.65 135 Max. 1.9 - Unit N・m g RECOMMENDED CONDITIONS FOR USE Symbol VCC Parameter Supply Voltage VD Control Supply Voltage VCIN(ON) VCIN(OFF) fPWM Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Module Operating Current tdead IO Conditions Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC,VN1-VNC Applied between : UP-VUPC, VP-VVPC, UN･VN･WN･Br -VNC Using Application Circuit of Fig. 8 For IPM’s each input signals RMS (Note.3) (Fig. 7) Recommended value ≤ 450 Unit V 15.0±1.5 V ≤ 0.8 ≥ 9.0 ≤ 20 kHz ≥ 2.0 μs ≤ 30 A V Note.3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak 5 Jan. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P,(U,V,W,B) P,(U,V,W,B) Fo VD(all) Vcc Vcc Fo V VD(all) Ic Vcin IN GND P Vcc Fo VD(all) Fo IN Vcin GND Fo IN GND U,V Vcc U,V,W,B Vcc VD(all) Fo Vcin IE , IF Fig. 2 VEC, VFM Test P Vcc Vcin V GND U,V,W,B,(N) U,V,(N) Fo Fo Vcin IN Fig. 1 VCEsat Test VD(all) Fo Vcc Vcc Fo VD(all) Fo IN Vcin GND N Fo IN GND N Ic Ic Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform P,(U,V,W,B) A Vcc VD(all) Fo Vcin V CE Fo pulse IN GND U,V,W,B,(N) Fig. 5 ICES Test Fig. 6 SC test waveform 6 Jan. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE Fig. 7 Dead time measurement point example 20k P VUP1 Vcc U Fo 1.5k VD1 Fo UP ≥0.1µ ≥10µ IN VUPC Vcc VFo 1.5k VD2 Fo VP ≥0.1µ ≥10µ OT SC GND GND VVP1 20k OUT IN VVPC U OUT OT AC Output SC GND GND V NC NC NC W NC 20k Vcc Fo UN IN ≥0.1µ ≥10µ OUT OT SC GND GND 20k Vcc Fo VN IN ≥0.1µ ≥10µ N OUT OT SC GND GND 20k VN1 Vcc Fo WN ≥0.1µ ≥10µ IN VNC OUT OT SC GND GND B 20k Vcc Fo 1.5k VD3 Fo Br IN ≥0.1µ ≥10µ OUT OT SC GND GND Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; • Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. • Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. • Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type. • Slow switching opto-coupler: CTR > 100% • Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. • Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. 7 Jan. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) INVERTER PART & CONVERTER PART OUTPUT CHARACTERISTICS (TYPICAL) INVERTER PART & CONVERTER PART 80 2.5 Tj=25°C COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (A) 70 60 50 VD=17V VD=13V 40 VD=15V 30 20 10 0 1.5 1.0 VD=15V 0.5 Tj=25°C Tj=125°C 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 70 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) INVERTER PART & CONVERTER PART FREE WHEELING DIODE & DIODE FORWARD CHARACTERISTICS (TYPICAL) INVERTER PART & CONVERTER PART 2.5 80 80 VD=15V 70 EMITTER CURRENT IE (A) Di FORWARD CURRENT IF (A) COLLECTO R-EMITTER SATURATION VOLTAGE VCEsat (V) 2.0 2.0 1.5 Ic=75A Tj=25°C Tj=125°C 1.0 Tj=25°C Tj=125°C 60 50 40 30 20 10 0 12 13 14 15 16 17 18 0 CONTROL VOLTAGE VD (V) 0.5 1 1.5 2 2.5 EMITTER-COLLECTOR VOLTAGE VEC (V) Di FORWARD VOLTAGE VFM (V) 8 Jan. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) INVERTER PART & CONVERTER PART SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) INVERTER PART & CONVERTER PART 10 1 Vcc=300V tc(off) SWITCHING TIME tc(on), tc(off) (μs) SWITCHING TIME ton, toff (μs) VD=15V Tj=25°C Tj=125°C Inductive Load toff 1 ton 0.1 Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load 0.01 1 10 100 1 10 100 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) SWITCHING ENERGY CHARACTERISTICS (TYPICAL) INVERTER PART SWITCHING ENERGY CHARACTERISTICS (TYPICAL) CONVERTER PART 1.6 1.8 Vcc=300V 1.4 SWITCHING ENERGY Eon, Eoff (mJ/pulse) SWITCHING ENERGY Eon, Eoff (mJ/pulse) tc(on) 0.1 VD=15V Tj=25°C 1.2 Eoff Tj=125°C Inductive Load 1.0 0.8 0.6 0.4 Eon 0.2 0.0 0 20 40 60 80 Vcc=300V 1.6 VD=15V Tj=125°C Inductive Load 1.2 1.0 0.8 0.6 Eon 0.4 0.2 0.0 0 COLLECTOR CURRENT IC (A) Eoff Tj=25°C 1.4 20 40 60 80 COLLECTOR CURRENT IC (A) 9 Jan. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) CONVERTER PART FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) INVERTER PART 80 Irr Tj=125°C 0.16 60 Inductive Load 0.14 50 0.12 40 0.10 30 trr 0.08 20 0.06 10 REVESE RECOVERY ENERGY Err (mJ/pulse) 0 20 40 60 0.14 30 0.12 25 0.10 20 trr 0.08 15 0.06 10 20 40 60 80 EMITTER CURRENT IE (A) FREE WHEELING DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) INVERTER PART FREE WHEELING DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) CONVERTER PART Tj=25°C Tj=125°C Inductive Load 0.8 0.6 0.4 0.2 0.0 20 40 60 80 EMITTER CURRENT IE (A) 35 Irr EMITTER CURRENT IE (A) VD=15V 0 Tj=125°C Inductive Load 0 Vcc=300V 1.0 40 Tj=25°C 0.16 80 1.4 1.2 VD=15V 0.18 REVERSE RECOVERY TIME trr (μs) 70 Tj=25°C 45 Vcc=300V REVERSE RECOVERY TIME trr (μs) VD=15V 0.18 0.20 REVESE RECOVERY ENERGY Err (mJ/pulse) REVERSE RECOVERY TIME trr (μs) Vcc=300V REVERSE RECOVERY CURRENT Irr (A) 0.20 1.2 Vcc=300V VD=15V 1.0 Tj=25°C Tj=125°C Inductive Load 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 EMITTER CURRENT IE (A) 10 Jan. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE ID VS. fc CHARACTERISTICS (TYPICAL) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 20 50 UVr Tj=25°C 40 16 Tj=125°C 14 35 N side UVt / UVr (V) 30 ID (mA) UVt 18 VD=15V 45 25 20 12 10 8 15 6 10 4 2 P side 5 0 0 0 5 10 15 20 25 fc (kHz) -50 0 50 100 150 Tj (°C) SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) INVERTER PART & CONVERTER PART 2.0 VD=15V SC (SC of Tj=25°C is normalized 1) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 0 50 100 150 Tj (°C) 11 Jan. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B6L1C060 FLAT-BASE TYPE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CONVERTER PART TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS INVERTER PART 1 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 1 0.1 0.01 Single Pulse IGBT Part; Per unit base: Rth(j-c)Q=0.62 K/W FWDi Part; 0.1 Single Pulse IGBT Part; Per unit base: Rth(j-c)Q=0.62 K/W 0.01 FWDi Part; Per unit base: Rth(j-c)D=1.06K/W Di part Per unit base: Rth(j-c)D=1.06K/W Per unit base: Rth(j-c)D=1.06K/W 0.001 0.00001 0.001 0.0001 0.001 0.01 0.1 1 10 0.00001 TIME t (sec) 0.0001 0.001 0.01 0.1 1 10 TIME t (sec) 12 Jan. 2011