MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM1500HC-66R PRE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1500HC-66R ● IC ............................................................... 1500 A ● VCES ....................................................... 3300V ● 1-element in a Pack ● Insulated Type ● LPT-IGBT / Soft Recovery Diode ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM 4 2 40 ±0.3 140 ±0.5 124 ±0.25 40 ±0.3 LABEL 15 ±0.3 6 6-M8 NUTS 57 ±0.25 +0.1 190 ±0.5 57 ±0.25 57 ±0.25 20 –0.2 29.5 ±0.5 Dimensions in mm 5 3 6 (C) 4 (C) 2 (C) 5 (E) 3 (E) 1 (E) C 1 5.2 ±0.3 9 ±0.2 >PET+PBT< E G E G C >PET+PBT< 3-M4 NUTS 20.25 ±0.3 8-φ7 MOUNTING HOLES CIRCUIT DIAGRAM 41.25 ±0.3 79.4 ±0.3 61.5 ±0.3 13 ±0.3 61.5 ±0.3 SCREWING DEPTH MIN 16.5 38 28 ±0.5 5 ±0.2 +1 0 SCREWING DEPTH MIN 7.7 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 1 MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som PRE CM1500HC-66R 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Conditions Item Ratings 3300 3200 ± 20 1500 3000 1500 3000 15600 6000 2600 –50 ~ +150 –50 ~ +150 –55 ~ +150 10 VGE = 0V, Tj = –40…+150°C Collector-emitter voltage VGE = 0V, Tj = –50°C Gate-emitter voltage VCE = 0V, Tj = 25°C DC, Tc = 95°C Collector current (Note 1) Pulse DC Emitter current (Note 2) (Note 1) Pulse Maximum power dissipation(Note 3) Tc = 25°C, IGBT part Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC =2500V, VCE ≤ VCES, VGE =15V, Tj =150°C Unit V V A A A A W V V °C °C °C µs ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C Tj = 150°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres Qg Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VCE = 10 V, IC = 150 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCE(sat) Collector-emitter saturation voltage IC = 1500 A VGE = 15 V td(on) Turn-on delay time tr Turn-on rise time Eon(10%) Eon Turn-on switching energy (Note 5) tf Turn-off fall time VEC Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C (Note 4) Tj = 125°C Tj = 150°C (Note 4) VCC = 1800 V IC = 1500 A VGE = ±15 V RG(on) = 1.6Ω Ls = 100 nH Inductive load (Note 6) Turn-off delay time Eoff VCC = 1800 V, IC = 1500 A, VGE = ±15 V Turn-on switching energy td(off) Eoff(10%) VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C Turn-off switching energy (Note 5) VCC = 1800 V IC = 1500 A VGE = ±15 V RG(off) = 5.6Ω Ls = 100 nH Inductive load Turn-off switching energy (Note 6) Emitter-collector voltage (Note 2) IE = 1500 A VGE = 0 V Min — — — 5.7 –0.5 — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Limits Typ — 6.0 36.0 6.2 — 210.0 13.0 6.0 16.0 2.45 3.10 3.25 1.00 0.95 0.95 0.28 0.30 0.30 2.45 2.90 3.10 2.70 3.30 3.60 2.70 2.80 2.85 0.30 0.35 0.40 2.00 2.45 2.50 2.20 2.70 2.80 2.15 2.30 2.25 Max 6.0 — — 6.7 0.5 — — — — — 3.70 — — 1.25 1.25 — 0.50 0.50 — — — — — — — 3.30 3.30 — 1.00 1.00 — — — — — — — 2.80 — Unit mA V µA nF nF nF µC V µs µs J/P J/P µs µs J/P J/P V HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 2 MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som PRE CM1500HC-66R 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (continuation) Symbol Item Conditions Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Reverse recovery time trr (Note 2) Reverse recovery current Irr (Note 2) Reverse recovery charge Qrr (Note 2) Erec(10%) Reverse recovery energy VCC = 1800 V IC = 1500 A VGE = ±15 V RG(on) = 1.6 Ω Ls = 100 nH Inductive load (Note 2)(Note 5) Reverse recovery energy Erec (Note 2)(Note 6) Min — — — — — — — — — — — — — — — Limits Typ 0.50 0.70 0.80 1250 1500 1550 1050 1700 2000 1.05 1.75 2.00 1.20 2.00 2.30 Max — — — — — — — — — — — — — — — Unit µs A µC J/P J/P THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K ,D(c-f) = 100 µm Min — — — Limits Typ — — Unit 6.0 Max 8.0 15.0 — K/kW K/kW K/kW Limits Typ — — — 1.2 — — — 11.0 0.12 1.5 Max 22.0 6.0 3.0 — — — — — — — N·m N·m N·m kg — mm mm nH mΩ Ω MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ rg Note 1. 2. 3. 4. 5. 6. Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistor Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Tc = 25°C Tc = 25°C Min 7.0 3.0 1.0 — 600 19.5 32.0 — — — Unit Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T opmax rating (150°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. The integration range of Eon / Eoff / Erec according to IEC 60747. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 3 MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som PRE CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 3000 3000 VCE = VGE Tj = 150°C VGE = 19V 2500 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 2500 VGE = 15V VGE = 11V 2000 VGE = 13V 1500 1000 VGE = 9V 500 2000 1500 1000 500 Tj = 25°C Tj = 150°C 0 0 2 1 3 4 5 0 6 0 COLLECTOR-EMITTER VOLTAGE (V) 8 10 12 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 3000 2500 EMITTER CURRENT (A) 2500 COLLECTOR CURRENT (A) 6 GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3000 VGE = 15V 2000 1500 1000 500 0 4 2 1 2 3 4 1500 1000 500 Tj = 25°C Tj = 125°C Tj = 150°C 0 2000 0 5 Tj = 25°C Tj = 125°C Tj = 150°C 0 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 4 MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som PRE CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VCE = 1800V, IC = 1500A Tj = 25°C 7 5 15 3 GATE-EMITTER VOLTAGE (V) Cies CAPACITANCE (nF) 2 102 7 5 3 2 101 Coes 7 5 Cres 3 100 -1 10 5 7 100 2 3 2 3 5 7 101 2 3 -5 0 5 10 15 20 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω LS = 100nH, Tj = 125°C Inductive load VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω LS = 100nH, Tj = 150°C Inductive load 7 Eon SWITCHING ENERGIES (J/P) 7 SWITCHING ENERGIES (J/P) 0 -15 5 7 102 8 6 5 Eoff 4 3 2 Erec 1 0 5 -10 VGE = 0V, Tj = 25°C f = 100kHz 2 10 Eon 6 5 Eoff 4 3 Erec 2 1 0 500 1000 1500 2000 2500 0 3000 0 500 1000 1500 2000 2500 3000 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 5 MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som PRE CM1500HC-66R 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 8 8 VCC = 1800V, IC = 1500A VGE = ±15V, LS = 100nH 7 Tj = 125°C, Inductive load VCC = 1800V, IC = 1500A VGE = ±15V, LS = 100nH 7 Tj = 150°C, Inductive load Eon 6 SWITCHING ENERGIES (J/P) SWITCHING ENERGIES (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HIGH POWER SWITCHING USE INSULATED TYPE 5 4 Eoff 3 2 Eon 6 5 4 Eoff 3 2 Erec Erec 1 0 102 7 5 0 2 4 6 8 10 0 12 6 8 10 HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 7 5 3 2 101 7 5 7 5 3 2 td(off) 100 td(on) tf 3 2 10-1 12 VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω LS = 100nH, Tj = 150°C Inductive load 3 2 td(off) 100 7 5 tr td(on) 3 2 10-1 7 5 tr 3 2 10-2 2 10 4 HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 7 5 2 GATE RESISTOR (Ω) VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω LS = 100nH, Tj = 125°C Inductive load 7 5 0 GATE RESISTOR (Ω) SWITCHING TIMES (µs) SWITCHING TIMES (µs) 3 2 1 tf 3 2 2 3 4 5 7 103 2 3 4 5 10-2 2 10 7 104 COLLECTOR CURRENT (A) 2 3 4 5 7 103 2 3 4 5 7 104 COLLECTOR CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 6 MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som PRE CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 102 104 VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, LS = 100nH Tj = 125°C, Inductive load 7 5 3 2 2 lrr 101 103 7 5 7 5 3 3 2 2 100 trr 7 5 102 7 5 3 3 2 2 10-1 2 10 2 3 4 5 7 103 2 3 4 5 REVERSE RECOVERY TIME (µs) 3 7 5 REVERSE RECOVERY CURRENT (A) REVERSE RECOVERY TIME (µs) 7 5 101 7 104 104 VCC = 1800V, VGE = ±15V RG(on) = 1.6Ω, LS = 100nH Tj = 150°C, Inductive load 7 5 3 3 2 lrr 101 2 103 7 5 7 5 3 3 2 2 100 trr 102 7 5 7 5 3 3 2 2 10-1 2 10 2 3 4 5 REVERSE RECOVERY CURRENT (A) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 101 7 103 2 3 4 5 7 104 EMITTER CURRENT (A) EMITTER CURRENT (A) 1.2 Rth(j–c)Q = 8.0K/kW Rth(j–c)R = 15.0K/kW 1.0 n Z th( j –c ) ( t ) = 0.8 Σ R 1–exp i NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS – t ti i=I 1 2 3 4 Ri [K/kW] : 0.0096 0.1893 0.4044 0.3967 τ i [sec] : 0.0001 0.0058 0.0602 0.3512 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mar. 2009 7 MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som PRE CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 20 VCC ≤ 2500V, VGE = ±15V Tj = 150°C, RG(off) = 5.6Ω COLLECTOR CURRENT (kA) COLLECTOR CURRENT (A) 4000 3000 2000 1000 0 0 1000 2000 3000 15 10 5 0 4000 COLLECTOR-EMITTER VOLTAGE (V) VCC ≤ 2500V, VGE = ±15V RG(on) = 1.6Ω, RG(off) = 5.6Ω Tj = 150°C 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE RECOVERY CURRENT (A) 4000 VCC ≤ 2500V, di/dt < 9kA/µs Tj = 150°C 3000 2000 1000 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) Mar. 2009 8