FDMC7570S N-Channel Power Trench® SyncFETTM 25 V, 40 A, 2 mΩ Features General Description Max rDS(on) = 2 mΩ at VGS = 10 V, ID = 27 A The FDMC7570S has been designed to minimize losses in Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 21.5 A power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest Advanced Package and Combination for low rDS(on) and high efficiency rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky SyncFET Schottky Body Diode body diode. 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Bottom Top S D D D Pin 1 S S G D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 40 132 (Note 1a) -Pulsed 27 A 120 Single Pulse Avalanche Energy EAS Ratings 25 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 144 59 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2.1 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC7570S Device FDMC7570S ©2009 Fairchild Semiconductor Corporation FDMC7570S Rev.C Package Power 33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7570S N-Channel Power Trench® SyncFETTM December 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 25 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 µA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3 V 21 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C -4 VGS = 10 V, ID = 27 A 1.6 2 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 21.5 A 2.4 2.9 VGS = 10 V, ID = 27 A, TJ = 125 °C 2.2 2.8 VDS = 5 V, ID = 27 A 154 gFS Forward Transconductance 1.2 1.7 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 3315 4410 pF 1010 1345 pF 168 255 pF 1.2 2.1 Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge Qgs Gate to Source Gate Charge VGS = 0 V to 4.5 V VDD = 13 V ID = 27 A Qgd Gate to Drain “Miller” Charge VDD = 13 V, ID = 27 A, VGS = 10 V, RGEN = 6 Ω 14 26 ns 6.8 14 ns 34 55 ns 4.5 10 ns 49 68 nC 22 31 nC 10.8 nC 5.5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 27 A (Note 2) 0.78 1.2 VGS = 0 V, IS = 2 A (Note 2) 0.43 0.8 30 48 ns 29 46 nC IF = 27 A, di/dt = 300 A/µs V Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. EAS of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 25 A 4. As an N-ch device, the negative Vgs rating is for lower duty cycle pulse occurrence only. No continuous rating is implied. FDMC7570S Rev.C 2 www.fairchildsemi.com FDMC7570S N-Channel Power Trench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted VGS = 10 V VGS = 4.5 V VGS = 3.3 V ID, DRAIN CURRENT (A) 90 6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 VGS = 3 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 60 VGS = 2.7 V 30 VGS = 2.7 V 5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 4 VGS = 3 V 3 VGS = 3.3 V 2 VGS = 4.5 V 1 VGS = 10 V 0 0 0 1 2 3 4 0 5 30 120 10 ID = 27 A VGS = 10 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 -75 SOURCE ON-RESISTANCE (mΩ) 1.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 90 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage Figure 1. On-Region Characteristics 6 4 TJ = 125 oC 2 TJ = 25 oC 2 IS, REVERSE DRAIN CURRENT (A) TJ = 125 oC 60 TJ = 25 oC 30 TJ = -55 oC 1.5 2.0 2.5 3.0 3.5 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 90 VDS = 5 V 4 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 200 100 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.0 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDMC7570S Rev.C PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 8 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 120 0 1.0 ID = 27 A 0 -50 Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC7570S N-Channel Power Trench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 5000 IDSS = 27 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 13 V 6 VDD = 10 V VDD = 16 V 4 1000 Coss 2 100 f = 1 MHz 0 0 10 20 30 40 50 0.1 50 Figure 7. Gate Charge Characteristics 30 10 Figure 8. Capacitance vs Drain to Source Voltage 135 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC VGS = 10 V 90 VGS = 4.5 V 45 o RθJC = 2.1 C/W Limited by Package 1 0.01 0.1 1 10 100 0 25 500 50 P(PK), PEAK TRANSIENT POWER (W) 2000 1000 1ms 10 ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s o DC TA = 25 C 0.01 0.01 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) 150 SINGLE PULSE VGS = 10V o RθJA = 125 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area FDMC7570S Rev.C 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 us 10 100 o Figure 9. Unclamped Inductive Switching Capability 200 100 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss VGS = 0 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC7570S N-Channel Power Trench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMC7570S Rev.C 5 www.fairchildsemi.com FDMC7570S N-Channel Power Trench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMC7570S. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 30 25 CURRENT (A) 20 15 di/dt = 300 A/µs 10 5 0 -5 0 50 100 150 200 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 15. SyncFET body diode reverses leakage versus drain-source voltage Figure 14. FDMC7570S SyncFET body diode reverse recovery characteristic FDMC7570S Rev.C 10 6 www.fairchildsemi.com FDMC7570S N-Channel Power Trench® SyncFETTM Typical Characteristics (continued) FDMC7570S N-Channel Power Trench® SyncFETTM Dimensional Outline and Pad Layout FDMC7570S Rev.C 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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I45 FDMC7570S Rev.C 8 www.fairchildsemi.com FDMC7570S N-Channel Power Trench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ®* Power-SPM™ AccuPower™ FlashWriter® * PowerTrench® FPS™ Auto-SPM™ The Power Franchise® PowerXS™ F-PFS™ Build it Now™ ® Programmable Active Droop™ FRFET® CorePLUS™ QFET® Global Power ResourceSM CorePOWER™ Green FPS™ QS™ CROSSVOLT™ TinyBoost™ Quiet Series™ Green FPS™ e-Series™ CTL™ TinyBuck™ RapidConfigure™ Gmax™ Current Transfer Logic™ TinyCalc™ GTO™ DEUXPEED® TinyLogic® IntelliMAX™ Dual Cool™ ™ TINYOPTO™ ISOPLANAR™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® TinyPower™ EfficentMax™ MegaBuck™ SignalWise™ TinyPWM™ EZSWITCH™* MICROCOUPLER™ SmartMax™ TinyWire™ ™* MicroFET™ SMART START™ TriFault Detect™ MicroPak™ SPM® TRUECURRENT™* STEALTH™ MillerDrive™ ® µSerDes™ SuperFET™ MotionMax™ Fairchild® SuperSOT™-3 Motion-SPM™ Fairchild Semiconductor® SuperSOT™-6 OPTOLOGIC® UHC® FACT Quiet Series™ SuperSOT™-8 OPTOPLANAR® ® ® Ultra FRFET™ FACT SupreMOS™ UniFET™ FAST® SyncFET™ VCX™ FastvCore™ Sync-Lock™ PDP SPM™ VisualMax™ FETBench™ XS™