FDMC86102 N-Channel Power Trench® MOSFET 100 V, 20 A, 24 mΩ Features General Description Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant Application DC - DC Conversion Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 20 29 (Note 1a) -Pulsed 7 A 30 Single Pulse Avalanche Energy EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 72 41 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC86102 Device FDMC86102 ©2012 Fairchild Semiconductor Corporation FDMC86102 Rev.C1 Package Power 33 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC86102 N-Channel Power Trench® MOSFET March 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 100 V 69 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.0 3.1 -9 mV/°C VGS = 10 V, ID = 7 A 19.4 24 VGS = 6 V, ID = 5 A 26.8 38 VGS = 10 V, ID = 7 A, TJ = 125 °C 32.8 41 VDD = 10 V, ID = 7 A 19 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 725 965 pF 175 235 pF 15 25 pF Ω 0.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) 8 17 4 10 ns ns 14 25 ns VDD = 50 V, ID = 7 A, VGS = 10 V, RGEN = 6 Ω 4 10 ns Total Gate Charge VGS = 0 V to 10 V 13 18 nC Total Gate Charge VGS = 0 V to 5 V 8 11 Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V ID = 7 A nC 3.7 nC 3.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 7 A (Note 2) 0.81 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.75 1.2 44 70 ns 40 65 nC IF = 7 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. Starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 12 A, VDD = 90 V, VGS = 10 V. FDMC86102 Rev.C1 2 www.fairchildsemi.com FDMC86102 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 30 ID, DRAIN CURRENT (A) 25 VGS = 5.5 V 20 VGS = 10 V 15 VGS = 5 V VGS = 6 V 10 VGS = 4.5 V 5 0 0.0 0.5 1.0 1.5 2.0 2.5 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 4.5 V 4 VGS = 5 V 3 VGS = 5.5 V 2 VGS = 6 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 3.0 0 5 10 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 ID = 7 A VGS = 10 V 0.6 -75 ID = 7 A 70 100 125 150 TJ = 125 oC 40 30 20 TJ = 25 oC 6 7 8 9 60 IS, REVERSE DRAIN CURRENT (A) 15 TJ = 150 oC 10 TJ = 25 oC 5 TJ = -55 oC 0 5 6 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 7 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC86102 Rev.C1 10 Figure 4. On-Resistance vs Gate to Source Voltage VDS = 5 V 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 20 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 50 4 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2 30 10 Figure 3. Normalized On- Resistance vs Junction Temperature 25 25 60 TJ, JUNCTION TEMPERATURE (oC) 30 20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 ID, DRAIN CURRENT (A) 15 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.8 VGS = 10 V 3 1.2 www.fairchildsemi.com FDMC86102 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = 7 A VDD = 50 V Ciss VDD = 25 V CAPACITANCE (pF) 8 VDD = 75 V 6 4 Coss 100 2 f = 1 MHz VGS = 0 V 0 2 4 6 8 10 12 14 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 30 10 9 8 7 6 5 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 4 3 TJ = 100 oC 2 TJ = 125 oC 25 20 VGS = 10 V Limited by Package 15 VGS = 6 V 10 5 o RθJC = 3 C/W 1 0.01 0.1 1 10 0 25 30 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 P(PK), PEAK TRANSIENT POWER (W) 1000 10 100 μs 1 1 ms THIS AREA IS LIMITED BY rDS(on) 0.1 0.01 75 Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) I D , DRAIN CURRENT (A) Crss 10 0.1 0 10 ms 100 ms 1s 10 s DC SINGLE PULSE T J = MAX RATED R θJA = 125 oC/W o T A = 25 C 0.001 0.01 0.1 1 10 100 100 10 SINGLE PULSE RθJA = 125 oC/W 1 TA = 25 oC 0.5 -4 10 1000 VDS, DRAIN to SOURCE VOLTAGE (V) -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area FDMC86102 Rev.C1 VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC86102 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMC86102 Rev.C1 5 www.fairchildsemi.com FDMC86102 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC86102 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout FDMC86102 Rev.C1 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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