FAIRCHILD FDB8445_10

FDB8445_F085
N-Channel PowerTrench® MOSFET
40V, 70A, 9mΩ
Features
Applications
„ Typ rDS(on) = 6.8mΩ at VGS = 10V, ID = 70A
„ Automotive Engine Control
„ Typ Qg(10) = 44nC at VGS = 10V
„ Powertrain Management
„ Low Miller Charge
„ Solenoid and Motor Drivers
„ Low Qrr Body Diode
„ Electronic Transmission
„ UIS Capability (Single Pulse/ Repetitive Pulse)
„ Distributed Power Architecture and VRMs
„ Qualified to AEC Q101
„ Primary Switch for 12V Systems
A
REE I
DF
M ENTATIO
LE
N
MP
LE
„ RoHS Compliant
D
GATE
G
SOURCE
TO-263AB
DRAIN
(FLANGE)
S
FDB SERIES
©2010 Fairchild Semiconductor Corporation
FDB8445_F085 Rev C (W)
1
www.fairchildsemi.com
FDB8445_F085 N-Channel PowerTrench® MOSFET
October 2010
Symbol
VDSS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current Continuous (VGS = 10V)
ID
(Note 1)
Pulsed
EAS
PD
TJ, TSTG
Ratings
40
Units
V
±20
V
70
A
Figure 4
Single Pulse Avalanche Energy
102
(Note 2)
mJ
Power Dissipation
92
W
Derate above 25oC
0.6
W/oC
Operating and Storage Temperature
o
-55 to +175
C
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient TO-263,
per pad area
lin2
cop-
1.63
oC/W
43
oC/W
Package Marking and Ordering Information
Device Marking
FDB8445
Device
FDB8445_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS = 32V
VGS = 0V
40
-
-
V
-
-
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
250
μA
-
-
±100
nA
VDS = VGS, ID = 250μA
2
2.5
4
V
ID = 70A, VGS = 10V
-
6.8
9
ID = 70A, VGS = 10V,
TJ = 175°C
-
13
17.2
VDS = 25V, VGS = 0V,
f = 1MHz
-
2860
3805
pF
-
295
395
pF
pF
TJ =150°C
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
180
270
RG
Gate Resistance
f = 1MHz
-
1.95
-
Ω
Qg(TOT)
Total Gate Charge at 10V
VGS = 0 to 10V
-
44
62
nC
Qg(TH)
Threshold Gate Charge
VGS = 0 to 2V
-
2.9
4.1
nC
Qgs
Gate to Source Gate Charge
-
11
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
8.2
-
nC
Qgd
Gate to Drain “Miller” Charge
-
11
-
nC
2
FDB8445_F085 Rev C (W)
VDD = 20V,
ID = 70A,
www.fairchildsemi.com
FDB8445_F085 N-Channel PowerTrench® MOSFET
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
Turn-On Time
-
-
45
ns
td(on)
Turn-On Delay Time
-
10
-
ns
tr
Turn-On Rise Time
-
19
-
ns
td(off)
Turn-Off Delay Time
-
36
-
ns
tf
Turn-Off Fall Time
-
16
-
ns
toff
Turn-Off Time
-
-
81
ns
V
VDD = 20V, ID = 70A
VGS = 10V, RGS = 5Ω
Drain-Source Diode Characteristics
ISD = 70A
-
-
1.25
ISD = 35A
-
-
1.0
V
Reverse Recovery Time
IF = 70A, di/dt = 100A/μs
-
-
59
ns
Reverse Recovery Charge
IF = 70A, di/dt = 100A/μs
-
-
77
nC
VSD
Source to Drain Diode Voltage
trr
Qrr
Notes:
1: Maximum wire current carrying capacity is 70A.
2: Starting TJ = 25oC, L = 65uH, IAS = 56A.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
3
FDB8445_F085 Rev C (W)
www.fairchildsemi.com
FDB8445_F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
0.8
0.6
0.4
0.2
0.0
VGS = 10V
CURRENT LIMITED
BY WIRE
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
100
1.2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
80
60
40
20
0
25
175
Figure 1. Normalized Power Dissipation vs Case
Temperature
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
-5
10
-4
-3
10
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
IDM, PEAK CURRENT (A)
1000
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
100
VGS = 10V
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
4
FDB8445_F085 Rev C (W)
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FDB8445_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
500
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
1000
10us
100
100us
10
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
1
0.1
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
10ms
DC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
0.01
100
0.1
1
10
100
400
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
140
140
VGS = 10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120
120
VDD = 5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 6. Unclamped Inductive Switching
Capability
100
80
TJ = 175oC
60
TJ = 25oC
40
TJ = -55oC
20
0
2.0
100
3.0
3.5
4.0
4.5
5.0
5.5
VGS = 5V
VGS = 4.5V
80
60
40
VGS = 4V
20
0
2.5
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
6.0
VGS = 3.5V
0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
ID = 70A
16
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
TJ = 175oC
12
8
TJ = 25oC
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
2.0
1.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = 70A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
5
FDB8445_F085 Rev C (W)
4
Figure 8. Saturation Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
20
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
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FDB8445_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
1.2
1.15
NORMALIZED GATE
THRESHOLD VOLTAGE
1.1
1.10
1.0
0.9
1.05
0.8
1.00
0.7
0.6
0.95
0.5
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
0.90
-80
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
CAPACITANCE (pF)
Ciss
1000
Coss
f = 1MHz
VGS = 0V
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
Figure 13. Capacitance vs Drain to Source
Voltage
200
10
ID = 70A
9
VDD = 15V
8
7
VDD = 20V
6
VDD = 25V
5
4
3
2
1
0
0
10
20
30
40
Qg, GATE CHARGE (nC)
50
Figure 14. Gate Charge vs Gate to Source Voltage
6
FDB8445_F085 Rev C (W)
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
100
0.1
ID = 250μA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
VGS = VDS
ID = 250μA
www.fairchildsemi.com
FDB8445_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
7
FDB8445_F085 Rev C (W)
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FDB8445_F085 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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