FDD8453LZ_F085 N-Channel Power Trench® MOSFET 40V, 50A, 6.5mΩ Features Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A General Description Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added HBM ESD protection level > 7kv typical RoHS Compliant Qualified to AEC Q101 to enhance ESD voltage level. Applications Inverter Synchronous Rectifier Symbol Package D D G G S D-PAK (TO-252) S ©2012 Fairchild Semiconductor Corporation FDD8453LZ_F085 Rev. C1 1 www.fairchildsemi.com FDD8453LZ_F085 N-Channel Power Trench® MOSFET Aug 2012 Symbol Drain to Source Voltage VDSS VGS Gate to Source Voltage Drain Current ID Parameter - Continuous (Package limited) TC = 25°C PD Units V ±20 V 50 -Pulsed EAS Ratings 40 A Figure4 Single Pulse Avalanche Energy (Note 1) 88 mJ Power Dissipation 118 W Dreate above 25oC 0.79 W/oC TJ, TSTG Operating and Storage Temperature -55 to + 175 o 1.27 oC/W C Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient, 1in2 copper pad area o 52 C/W Package Marking and Ordering Information Device Marking FDD8453LZ Device FDD8453LZ_F085 Package D-PAK(TO-252) Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 32V, VGS = 0V TC = 150oC VGS = ±20V 40 - - - - 1 - - 250 - - ±10 μA uA On Characteristics VGS(th) rDS(on) gFS Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA 1.0 1.8 3.0 V ID = 15A, VGS= 10V - 5.0 6.5 mΩ ID = 13A, VGS= 4.5V - 6.0 7.8 mΩ ID = 15A, VGS= 10V TJ=175oC - 9.4 12.2 mΩ VDS = 5V, ID = 15A - 91 - S VDS = 20V, VGS = 0V, f = 1MHz - 2935 - pF - 340 - pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 260 - Rg Gate Resistance f = 1MHz - 1.8 - Ω Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V - 60 78 nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge FDD8453LZ_F085 Rev. C1 2 VDD = 20V ID = 15A Ig=1mA - 32 42 - 7.5 - nC - 13 - nC www.fairchildsemi.com FDD8453LZ_F085 N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 34 ns td(on) Turn-On Delay Time - 12 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff - 10 - ns - 43 - ns Fall Time - 7 - ns Turn-Off Time - - 80 ns ISD = 2A - 0.7 1.2 V ISD = 15A - 0.8 1.3 V VDD = 20V, ID = 15A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 15A, dISD/dt = 100A/μs - 25 33 ns - 14 19 nC Notes: 1: Starting TJ = 25oC, L = 0.11mH, IAS = 40A, VDD = 36V during inductor charging and VDD = 0V during the time in Avalanche. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD8453LZ_F085 Rev. C1 3 www.fairchildsemi.com FDD8453LZ_F085 N-Channel Power Trench® MOSFET Electrical Characteristics TC = 25oC unless otherwise noted 120 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE 90 VGS = 10V 60 30 0 175 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1E4 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDD8453LZ_F085 Rev. C1 4 www.fairchildsemi.com FDD8453LZ_F085 N-Channel Power Trench® MOSFET Typical Characteristics 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25oC 1 1ms 10ms DC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.001 100 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 Figure 6. Unclamped Inductive Switching Capability VDD = 5V 75 50 TJ = 175oC 25 TJ = 25oC 0 0 18 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 12 o TJ = 175 C 9 TJ = 25oC 6 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD8453LZ_F085 Rev. C1 VGS = 3V 0.4 0.8 1.2 1.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 Figure 8. Saturation Characteristics 15 3 25 0 0.0 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = 15A VGS = 4.5V 50 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX Figure 7. Transfer Characteristics 21 VGS = 3.5V 75 TJ = -55oC 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 4V 2.2 2.0 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 15A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDD8453LZ_F085 N-Channel Power Trench® MOSFET Typical Characteristics 1.15 VGS = VDS ID = 250μA 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 1000 Coss 100 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 13. Capacitance vs Drain to Source Voltage FDD8453LZ_F085 Rev. C1 1.10 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 f = 1MHz VGS = 0V ID = 1mA 10 ID = 15A 8 VDD = 15V 6 VDD = 20V 4 VDD = 25V 2 0 0 10 20 30 40 50 Qg, GATE CHARGE(nC) 60 70 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDD8453LZ_F085 N-Channel Power Trench® MOSFET Typical Characteristics *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 FDD8453LZ_F085 Rev. C1 7 www.fairchildsemi.com FDD8453LZ_F085 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PDP SPM™ FlashWriter® * The Power Franchise® The Right Technology for Your Success™ AccuPower™ FPS™ Power-SPM™ ® Auto-SPM™ F-PFS™ PowerTrench® PowerXS™ AX-CAP™* FRFET® Programmable Active Droop™ Global Power ResourceSM BitSiC® TinyBoost™ QFET® Build it Now™ Green FPS™ TinyBuck™ QS™ CorePLUS™ Green FPS™ e-Series™ TinyCalc™ Quiet Series™ CorePOWER™ Gmax™ TinyLogic® RapidConfigure™ CROSSVOLT™ GTO™ TINYOPTO™ CTL™ IntelliMAX™ ™ TinyPower™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ Saving our world, 1mW/W/kW at a time™ DEUXPEED® MegaBuck™ TinyWire™ Dual Cool™ SignalWise™ MICROCOUPLER™ TranSiC® EcoSPARK® SmartMax™ MicroFET™ TriFault Detect™ EfficentMax™ SMART START™ MicroPak™ TRUECURRENT®* ESBC™ SPM® MicroPak2™ μSerDes™ STEALTH™ MillerDrive™ ® SuperFET® MotionMax™ SuperSOT™-3 Motion-SPM™ Fairchild® UHC® SuperSOT™-6 mWSaver™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 OptiHiT™ FACT Quiet Series™ UniFET™ SupreMOS® OPTOLOGIC® FACT® VCX™ OPTOPLANAR® SyncFET™ FAST® ® VisualMax™ Sync-Lock™ FastvCore™ XS™ ®* FETBench™