FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • 5.5 A, 20 V. • Extended VGSS range (±12V) for battery applications Applications • ESD protection diode (note 3) • Load switch • High performance trench technology for extremely low RDS(ON) • Motor drive • DC/DC conversion • Low profile TSSOP-8 package • Power management Absolute Maximum Ratings Symbol Drain-Source Voltage VGSS ID Drain Current PD Power Dissipation 1 8 2 7 3 6 4 5 TA=25oC unless otherwise noted Parameter VDSS – Continuous Ratings Units 20 V ±12 V (Note 1a) 5.5 A (Note 1a) 1.0 (Note 1b) 0.6 Gate-Source Voltage – Pulsed TJ, TSTG RDS(ON) = 18 mΩ @ VGS = 4.5V RDS(ON) = 25 mΩ @ VGS = 2.5V 30 W –55 to +150 °C (Note 1a) 100 °C/W (Note 1b) 125 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking 2501NZ 2008 Fairchild Semiconductor Corporation Device FDW2501NZ Reel Size Tape width Quantity 13’’ 12mm 2500 units FDW2501NZ Rev E2 (W) FDW2501NZ July 2008 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 10 µA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –10 µA 1.5 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) 20 ID = 250 µA, Referenced to 25°C V 14 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C 0.6 1.0 –3 VGS = 4.5 V, ID = 5.5 A ID = 5 A VGS = 2.5 V, VGS = 4.5 V, ID = 5.5 A, TJ=125°C 14 19 19 mV/°C 18 25 29 30 mΩ ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 5.5 A 30 A VDS = 10 V, f = 1.0 MHz V GS = 0 V, 1286 pF 305 pF 161 pF S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) 10 20 14 25 ns Turn–Off Delay Time 25 40 ns tf Turn–Off Fall Time 8 16 ns Qg Total Gate Charge 12 17 Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 5.5 A, ns nC 2.6 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 1.0 A Voltage (Note 2) 0.7 1.0 1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 100°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 125°C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDW2501NZ Rev E2 (W) FDW2501NZ Electrical Characteristics FDW2501NZ Typical Characteristics 60 VGS = 4.5V 1.8 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V ID, DRAIN CURRENT (A) 50 40 2.5V 30 20 2.0V 10 0 0 1 2 3 1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.0V 0.8 4 0 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 50 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.05 ID = 5.5A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 ID = 2.8A 0.04 0.03 TA = 125oC 0.02 TA = 25oC 0.01 -50 -25 0 25 50 75 100 125 150 175 1 2 o 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V IS, REVERSE DRAIN CURRENT (A) 40 ID, DRAIN CURRENT (A) 4.5V 1 25oC TA = -55oC 30 125oC 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 0.01 -55oC 0.001 0.0001 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2501NZ Rev E2 (W) FDW2501NZ Typical Characteristics 2000 5 f = 1 MHz VGS = 0 V VDS = 5V 4 1600 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) ID = 5.5 A 15V 3 2 CISS 1200 800 1 400 COSS CRSS 0 0 0 2 4 6 8 10 12 14 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 50 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100µs 1ms 10 10ms 100ms 1s 1 DC VGS = 4.5V SINGLE PULSE 0.1 o RθJA = 125 C/W o TA = 25 C 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.1 D = 0.5 RθJA(t) = r(t) * RθJA 0. RθJA = 125 C/W o 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2501NZ Rev E2 (W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® tm PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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