QEB373 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) FEATURES 0.074 (1.9) • T-3/4 (2mm) Surface Mount Package • Tape & Reel Option (See Tape & Reel Specifications) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) • Lead Form Options: Gullwing, Yoke, Z-Bend 0.055 (1.4) • Narrow Emission Angle, 24° 0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3) • Wavelength = 880nm, AlGaAs 0.024 (0.6) SCHEMATIC • Clear Lens • Matched Photosensor: QSB363 NOTES: 1. Dimensions are in inches (mm). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. ABSOLUTE MAXIMUM RATINGS CATHODE Symbol Rating Operating Temperature TOPR -40 to +100 Units °C Storage Temperature TSTG -40 to +100 °C TSOL-I 240 for 5 sec °C Soldering Temperature (Iron)(2,3,4) TSOL-F 260 for 10 sec °C Continuous Forward Current IF 50 mA Reverse Voltage VR 5 V Power Dissipation(1) PD 100 mW (Flow)(2,3) ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER Peak Emission Wavelength NOTES (TA = 25°C unless otherwise specified) Parameter Soldering Temperature ANODE • High Radiant Intensity 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip at 1/16” (1.6mm) from housing (TA =25°C) TEST CONDITIONS SYMBOL MIN. TYP. MAX. IF = 100mA lP — 880 — UNITS nm Emission Angle IF = 100mA U — ±12 — Deg. Forward Voltage IF = 100mA, tP = 20ms VF — — 1.7 V Reverse Current VR = 5V IR — — 100 Radiant Intensity IF = 100mA, tP = 20ms Ie 16 — — mW/sr Rise Time IF = 100mA, tr — 800 — ns Fall Time tP = 20ms tf — 800 — ns 1 of 4 µA 100008A QEB373 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE TYPICAL PERFORMANCE CURVES Fig. 2 Relative Radiant Intensity vs. Wavelength Fig. 1 Maximum Forward Current vs. Temperature 100 IF = 20mA TA = 25˚C Relative Radiant Intensity (%) Forward Current IF (mA) 200 160 120 80 40 0 -25 0 25 50 75 85 80 60 40 20 100 0 820 840 860 880 900 920 940 960 980 Ambient Temperature TA (˚C) Wavelengthl l (nm) Fig. 4 Forward Current vs. Forward Voltage 500 920 Forward Current IF (mA) Peak Emission Wavelength (nm) Fig. 3 Peak Emission Wavelength vs. Ambient Temperature 900 880 860 840 -25 0 25 50 75 200 100 50 20 10 5 2 100 1 Ambient Temperature TA (˚C) 1 20 1.5 2.0 2.5 3.0 3.5 Fig. 6 Relative Radiant Intensity vs. Angular Displacement 10 30 5 Relative Radiant Intensity Relative Radiant Flux (%) 1.0 Forward Voltage VF (V) Fig. 5 Relative Radiant Flux vs. Ambient Temperature 2 1 0.5 0.2 0.1 20 10 0 10 20 30 40 40 50 50 60 60 70 70 80 80 90 90 -25 0 25 50 75 100 Ambient Temperature TA (˚C) 2 of 4 0.5 0.6 0.4 0.2 0 0.2 0.4 0.6 Ambient Temperature TA (˚C) 100008A SURFACE MOUNT OPTIONS T-3/4 PACKAGES GULL WING LEAD CONFIGURATION FEATURES • Three lead forming options: Gull Wing, Yoke and Z-Bend • Compatible with automatic placement equipment 0.166 (4.2) • Supplied on tape and reel or in bulk packaging 0.016 (0.4) • Compatible with vapor phase reflow solder processes ANODE 0.020 (0.51) 0.087 (2.2) 0.071 (1.8) 0.074 (1.9) 0.024 (0.6) .118 (3.0) .102 (2.6) 0.078 (2.0) 0.055 (1.4) 0.043 (1.1) 0.005 (0.13) 0.106 (2.7) 0.091 (2.3) NOTES: (Applies to all package drawings) 1. Dimensions are in inches (mm). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. YOKE LEAD CONFIGURATION Z-BEND LEAD CONFIGURATION 0.236 (6.0) 0.220 (5.6) 0.177 (4.5) 0.161 (4.1) 0.283 (7.2) 0.098 (2.5) 0.016 (0.4) 0.127 (3.25) 0.112 (2.85) 0.016 (0.4) ANODE 0.020 (0.5) ANODE 0.020 (0.5) 0.087 (2.2) 0.071 (1.8) 0.087 (2.2) 0.071 (1.8) 0.074 (1.9) 0.074 (1.9) 0.118 (3.0) 0.102 (2.6) 0.031 (0.8) 0.055 (1.4) 0.024 (0.6) .118 (3.0) 0.080 (2.0) .102 (2.6) 0.031 (0.8) 0.051 (1.3) 0.008 (0.2) 0.043 (1.1) 0.141 (3.6) 3 of 4 0.055 (1.4) 0.043 (1.1) 0.106 (2.7) 0.091 (2.3) 100008A QEB373 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 4 of 4 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. © 2000 Fairchild Semiconductor Corporation 100008A