PLASTIC INFRARED LIGHT EMITTING DIODE QEE213 PACKAGE DIMENSIONS 0.060 (1.50) 0.174 (4.44) R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) ;@À;@À 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN SCHEMATIC EMITTER 0.060 (1.52) 0.020 (0.51) SQ. (2X) ANODE 0.100 (2.54) CATHODE NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. DESCRIPTION The QEE213 is a 940nm GaAs LED encapsulated in a medium angle, thin plastic sidelooker package. FEATURES • Wavelength = 940 nm, GaAs • Package Type: Sidelooker • Medium Beam Angle, 50° • Clear Plastic Package • Matched Photosensors: QSE213 and QSE243 2001 Fairchild Semiconductor Corporation DS300239 9/18/01 1 OF 4 www.fairchildsemi.com PLASTIC INFRARED LIGHT EMITTING DIODE QEE213 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit TOPR -40 to + 100 °C Operating Temperature Storage Temperature TSTG -40 to + 100 °C Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C IF 100 mA Reverse Voltage VR 5 V Peak Forward Current(5) IFP 1 A PD 100 mW Continuous Forward Current Power Dissipation(1) ELECTRICAL / OPTICAL CHARACTERISTICS Parameter Peak Emission Wavelength (TA =25°C) Test Conditions Symbol Min Typ Max Units IF = 100 mA lP — 940 — nm Emission Angle IF = 100 mA U — ±25 — Deg. Forward Voltage IF = 100 mA, tp = 20 ms VF — — 1.5 V Reverse Current VR = 5 V IR — — 10 µA Radiant Intensity IF = 100 mA, tp = 20 ms Ie 2 — — mW/sr Rise Time IF = 100 mA tr — 1 — Fall Time tp = 100 µs, T = 10 mS tf — 1 — µs NOTES 1. Derate power dissipation linearly 2.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16” (1.6 mm) minimum from housing. 5. Pulse conditions: tp = 100 µs, T = 10 ms. www.fairchildsemi.com 2 OF 4 9/18/01 DS300239 PLASTIC INFRARED LIGHT EMITTING DIODE QEE213 TYPICAL PERFORMANCE CURVES Fig. 2 Forward Voltage vs. Ambient Temperature Fig. 1 Forward Current vs. Forward Voltage 2.0 IF Pulsed tpw = 100 µs TA = 25˚C VF - FORWARD VOLTAGE (V) IF - FORWARD CURRENT (mA) 103 102 101 100 0 1 2 3 4 5 IF = 50 mA 1.5 IF = 100 mA 1.0 IF = 20 mA IF Pulsed tpw = 100 µs Duty Cycle = 0.1% 0.5 0.0 6 -40 VF - FORWARD VOLTAGE (V) 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (˚C) Fig. 3 Normalized Radiant Intensity vs. Forward Current IE - NORMALIZED RADIANT INTENSITY -20 Fig. 4 Radiation Diagram 10 Normalized to: IF = 100 mA Pulsed tpw = 100 µs Duty Cycle = 0.1% TA = 25˚C 1 110 100 90 80 70 120 60 130 0.1 50 140 40 150 30 160 0.01 20 170 0.001 0 10 100 1000 180 1.0 10 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 0 1.0 IF - FORWARD CURRENT (mA) DS300239 9/18/01 3 OF 4 www.fairchildsemi.com PLASTIC INFRARED LIGHT EMITTING DIODE QEE213 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 4 OF 4 9/18/01 DS300239