ONSEMI UMA6NT1

UMA4NT1, UMA6NT1
Preferred Devices
Dual Common Emitter Bias
Resistor Transistors
PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
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The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1 series, two
BRT devices are housed in the SOT−353 package which is ideal for
low power surface mount applications where board space is at a
premium.
•
•
•
•
3
2
1
R1
R1
Q1
Q2
4
5
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MARKING
DIAGRAM
5
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
Ux d
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
RθJA
833
°C/W
TJ, Tstg
−65 to
+150
°C
*150
mW
Collector Current
4
SC−88A/SOT−353
CASE 419A
STYLE 7
1
2
3
Ux = Device Marking
x = 0 or 1
d = Date Code
THERMAL CHARACTERISTICS
Thermal Resistance − Junction-to-Ambient
(surface mounted)
Operating and Storage Temperature
Range
Total Package Dissipation
@ TA = 25°C (Note 1.)
PD
DEVICE MARKING AND RESISTOR VALUES
Device
UMA4NT1
UMA6NT1
Marking
R1 (K)
R2 (K)
U0
U1
10
47
∞
∞
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
 Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 2
1
ORDERING INFORMATION
Package
Shipping†
UMA4NT1
SOT−323
3000/Tape & Reel
UMA6NT1
SOT−323
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
UMA4NT1/D
UMA4NT1, UMA6NT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0, IC = 5.0 mA)
IEBO
−
−
−
−
0.9
0.2
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
160
160
250
250
−
−
VCE(SAT)
−
−
0.25
Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
VOL
−
−
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
VOH
4.9
−
−
Vdc
R1
7.0
33
10
47
13
61
k
OFF CHARACTERISTICS
UMA4NT1
UMA6NT1
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
UMA4NT1
UMA6NT1
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
UMA4NT1
UMA6NT1
PD , POWER DISSIPATION (MILLIWATTS)
Input Resistor
250
200
150
100
50
0
−50
RθJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
150
UMA4NT1, UMA6NT1
10
1000
IC/IB = 10
25°C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − UMA4NT1
TA = 75°C
1
−25°C
0.1
−25°C
100
25°C
10
VCE = 10 V
1
0.01
0
10
20
30
40
50
60
IC, COLLECTOR CURRENT (mA)
70
80
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 mA
TA = 25°C
10
8
6
4
2
0
1000
Figure 3. DC Current Gain
12
Cob, CAPACITANCE (pF)
TA = 75°C
0
5
10
15
20
25
30
40
35
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
75°C
25°C
0.1
0.01
45
TA = −25°C
1
VO = 5 V
0
Figure 4. Output Capacitance
1
2
3
4
VIN, INPUT VOLTAGE (VOLTS)
5
6
Figure 5. Output Current versus Input Voltage
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3
UMA4NT1, UMA6NT1
10
1000
IC/IB = 10
25°C
1
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − UMA6NT1
−25°C
TA = 75°C
0.1
25°C
−25°C
100
VCE = 10 V
10
0.01
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
60
1
10
IC, COLLECTOR CURRENT (mA)
Figure 6. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 mA
TA = 25°C
10
8
6
4
2
0
100
Figure 7. DC Current Gain
12
Cob, CAPACITANCE (pF)
TA = 75°C
0
5
10
15
20
25
30
40
35
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
1
25°C
0.1
0.01
0.001
45
TA = −25°C
VO = 5 V
0
Figure 8. Output Capacitance
1
2
3
4
VIN, INPUT VOLTAGE (VOLTS)
Figure 9. Output Current versus Input Voltage
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4
5
UMA4NT1, UMA6NT1
PACKAGE DIMENSIONS
SC−88A/SOT−353
5−LEAD PACKAGE
CASE 419A−02
ISSUE G
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
G
5
4
−B−
S
1
2
3
0.2 (0.008)
D 5 PL
M
B
DIM
A
B
C
D
G
H
J
K
N
S
M
N
J
STYLE 7:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
UMA4NT1, UMA6NT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
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6
For additional information, please contact your
local Sales Representative.
UMA4NT1/D