ONSEMI NTMFS4841NT3G

NTMFS4841N
Power MOSFET
30 V, 57 A, Single N−Channel, SO−8FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices*
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V(BR)DSS
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
RDS(ON) MAX
7.0 mW @ 10 V
30 V
Symbol
D (5,6)
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
13.1
A
Continuous Drain
Current RqJA
(Note 1) Steady
State
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
Continuous Drain
Current RqJA −
t = 10 sec
TA = 25°C
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
Current RqJA
(Note 2)
TA = 85°C
TA = 25°C
ID
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
PD
Source Current (Body Diode)
5
A
0.87
ID
57
PD
41.7
D
1
8.3
W
A
41
W
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4841N
AYWWG
G
D
D
D
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
21.7
IDM
171
A
TJ,
TSTG
−55 to
+150
°C
IS
35
A
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 19 Apk, L = 1.0 mH, RG = 25 W)
EAS
180
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
May, 2010 − Rev. 7
MARKING
DIAGRAM
W
Drain to Source dV/dt
© Semiconductor Components Industries, LLC, 2010
N−CHANNEL MOSFET
A
0.45
TC = 85°C
Operating Junction and Storage
Temperature
19.9
6
TC = 85°C
TA = 25°C
W
2.6
ID
TA = 85°C
tp=10ms
2.17
14.4
TA = 85°C
TA = 25°C
S (1,2,3)
1.13
TA = 85°C
TA = 25°C
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
PD
TA = 85°C
Steady
State
G (4)
9.5
TA = 85°C
57 A
11.4 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
1
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4841NT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4841NT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Publication Order Number:
NTMFS4841N/D
NTMFS4841N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
3
Junction−to−Ambient – Steady State (Note 1)
RqJA
57.7
Junction−to−Ambient – Steady State (Note 2)
RqJA
143.4
Junction−to−Ambient − t = 10 sec
RqJA
25
Unit
°C/W
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
25
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25 °C
1
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
1.5
5.6
VGS = 10 V to
11.5 V
ID = 30 A
4.7
ID = 15 A
4.6
VGS = 4.5 V
ID = 30 A
9.2
ID = 15 A
8.5
gFS
VDS = 15 V, ID = 15 A
mV/°C
7.0
11.4
16
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
177
Total Gate Charge
QG(TOT)
11.5
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
1436
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
348
2.0
5.0
pF
17
nC
5.1
QG(TOT)
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
25.4
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
13.5
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
tf
66.5
15.5
7.5
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4841N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
8.1
tr
td(OFF)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
24.2
ns
22.8
5.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.9
TJ = 125°C
0.8
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.2
V
20.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
11.6
ns
8.9
QRR
10.7
nC
Source Inductance
LS
0.93
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
0.005
1.84
3.2
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
W
NTMFS4841N
5.5 V to 10 V
ID, DRAIN CURRENT (AMPS)
TJ = 25°C
VGS = 5 V
4.5 V
4V
3.8 V
3.6 V
3.4 V
0
0.018
0.017
0.016
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
1.8
1.7
1.6
1
3
2
4
5
VDS = 10 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
2
1
3
4
5
6
7
8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
3
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
5
6
7
8
9
10
11
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.017
TJ = 25°C
0.014
VGS = 4.5 V
0.011
0.008
VGS = 11.5 V
0.005
0.002
10
15
20
25
30
35
40
45
50
55
60
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
ID = 30 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−55 −35 −15
VGS = 0 V
TJ = 150°C
1000
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
TYPICAL PERFORMANCE CURVES
TJ = 125°C
100
10
TJ = 25°C
1
0.1
5
25
45
65
85
105 125 145
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4841N
TYPICAL PERFORMANCE CURVES
1800
C, CAPACITANCE (pF)
TJ = 25°C
Ciss
1600
Ciss
1400
1200
1000
800
Crss
600
Coss
400
200
0
10
Crss
5
0
5
VGS
VDS
10
15
20
30
25
12
11
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
2200
2000
9
8
7
6
5
4
3
2
1
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
100
tr
td(off)
1
td(on)
tf
1
VDD = 15 V
VGS = 11.5 V
ID = 30 A
TJ = 25°C
0
10
RG, GATE RESISTANCE (W)
0.1
I D, DRAIN CURRENT (AMPS)
100 ms
1 ms
10 ms
dc
10
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
TJ = 25°C
15
10
5
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
Figure 10. Diode Forward Voltage vs. Current
10 ms
10
6 8 10 12 14 16 18 20 22 24 26
QG, TOTAL GATE CHARGE (nC)
20
0
0.5
100
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
4
VGS = 0 V
25
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
2
30
VDD = 15 V
ID = 15 A
VGS = 11.5 V
10
QGD
QGS
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
QT
180
160
ID = 19 A
140
120
100
80
60
40
20
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4841N
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
25°C
100°C
125°C
10
1
1
100
10
PULSE WIDTH (ms)
1000
Figure 13. EAS vs. Pulse Width
RqJA, EFFECTIVE TRANSIENT
THERMAL RESPONSE
1.0
0.1
Normalized to RqJA at Steady State (1 inch)
0.01
0.001
1E−04
Single Pulse
1E−03
1E−02
0.0086 W 0.026 W
0.078 W 0.748 W
0.00004
0.0006
0.0002
1E−01
0.004
1E+00
t, time (s)
Figure 14. FET Thermal Response
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6
4.92 W
0.033
7.46 W
0.139
1E+01
15.76 W
1.03
23 W
2.4
1E+02
51 W
57
Ambient
1E+03
NTMFS4841N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA−01
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
6
2X
0.20 C
5
4X
E1
1
2
3
q
E
2
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
0.10 C
SIDE VIEW
8X
C A B
0.05
c
3X
4X
1.270
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
e/2
L
1
4
K
0.750
4X
1.000
0.965
1.330
2X
0.905
2X
E2
L1
6
G
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
0.51
−−−
−−−
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
SOLDERING FOOTPRINT*
DETAIL A
b
0.10
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
0.495
M
4.530
3.200
0.475
5
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTMFS4841N/D