NTMFS4119N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead Features •Low RDS(on) •Fast Switching Times •Low Inductance SO-8 Package •These are Pb-Free Devices http://onsemi.com V(BR)DSS Applications 2.3 mW @ 10 V 30 V •Notebooks, Graphics Cards •Low Side Switch •DC-DC ID Max (Note 1) RDS(on) Typ 30 A 3.1 mW @ 4.5 V D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS $20 V ID 18 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 13 t v10 s TA = 25°C 30 Steady State PD Steady State Power Dissipation (Note 2) Pulsed Drain Current MARKING DIAGRAM W D 6.1 TA = 25°C ID TA = 85°C 11 A 8.0 TA = 25°C PD tp = 10 ms Operating Junction and Storage Temperature 0.9 W IDM 89 A TJ, Tstg -55 to 150 °C Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 29 A, L = 1 mH, RG = 25 W) IS 8.0 A EAS 421 mJ TL 260 °C THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction-to-Case - Steady State RqJC 1.3 °C/W Junction-to-Ambient - Steady State (Note 1) RqJA 53.7 Junction-to-Ambient - t v10 s (Note 1) RqJA 20.5 Junction-to-Ambient - Steady State (Note 2) RqJA 138.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq). © Semiconductor Components Industries, LLC, 2007 S S S G 1 SO-8 FLAT LEAD CASE 488AA STYLE 1 D 4119N AYWWG G D D 4119N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) July, 2007 - Rev. 5 S TA = 25°C t v10 s Continuous Drain Current (Note 2) 2.3 G 1 ORDERING INFORMATION Device Package Shipping† NTMFS4119NT1G SO-8 FL (Pb-Free) 1500 Tape & Reel NTMFS4119NT3G SO-8 FL (Pb-Free) 5000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMFS4119N/D NTMFS4119N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage T emperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 19 VGS = 0 V, VDS = 24 V TJ = 25°C 1.0 TJ = 125°C IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mV/°C mA 10 100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance Forward Transconductance RDS(on) gFS 1.0 2.5 7.0 V mV/°C VGS = 10 V, ID = 29 A 2.3 3.5 VGS = 4.5 V, ID = 25 A 3.1 4.8 VDS = 15 V, ID = 10 A 23 S 4800 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 530 Total Gate Charge QG(TOT) 36.8 Threshold Gate Charge QG(TH) 7.3 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 17.4 RG 0.73 W 28 ns Gate Resistance VGS = 0 V, f = 1.0 MHz, VDS = 24 V VGS = 4.5 V, VDS = 15 V, ID = 18 A 800 60 nC 11 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 1.0 A, RG = 3.0 W tf 26 35 40 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.74 TJ = 125°C 0.56 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 8.0 A 36.5 VGS = 0 V, dIS/dt = 100 A/ms, IS = 8.0 A QRR http://onsemi.com 2 V ns 19.3 19.8 37 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 1.0 nC NTMFS4119N TYPICAL PERFORMANCE CURVES 70 70 TJ = 25°C 60 VGS = 3.8 V to 10 V VDS ≥ 10 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 3.6 V 3.4 V 50 3.2 V 40 30 3.0 V 20 2.8 V 10 60 50 40 30 TJ = 125°C 20 TJ = 25°C 10 2.6 V 0 1 2 3 5 4 7 6 9 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3 2 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 0.007 ID = 10 A TJ = 25°C 0.006 0.005 0.004 0.003 0.002 0.001 2 3 4 5 6 7 8 9 10 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) TJ = -55°C 0 0.004 TJ = 25°C 0.0035 0.003 VGS = 4.5 V 0.0025 VGS = 10 V 0.002 0.0015 10 20 40 50 60 70 Figure 4. On-Resistance vs. Drain Current and Gate Voltage Figure 3. On-Resistance vs. Gate-to-Source Voltage 2 100000 VGS = 0 V ID = 29 A VGS = 10 V 10000 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 30 ID, DRAIN CURRENT (AMPS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1.75 5 1.5 1.25 1 0.75 0.5 -50 TJ = 150°C 1000 100 TJ = 100°C 10 1 -25 0 25 50 75 100 125 150 3 6 9 12 15 18 21 24 27 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMFS4119N VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 6300 Ciss 5600 4900 4200 3500 2800 2100 Coss 1400 700 20 5 QT 4 VDS QGS 12 2 8 4 1 ID = 18 A TJ = 25°C 5 Figure 7. Capacitance Variation 20 25 30 10 15 QG, TOTAL GATE CHARGE (nC) 35 0 40 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 1000 8 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 4.5 V t, TIME (ns) QGD 3 Crss 0 0 25 0 5 10 15 20 30 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 tf td(off) td(on) 10 16 VGS VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 7000 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES 1 tr 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25°C 6 4 2 0 0.4 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.5 0.7 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 0.9 Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTMFS4119N PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA-01 ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 6 2X 0.20 C 5 4X E1 q E 2 c 1 2 3 A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --4.22 6.15 BSC 5.50 5.80 6.10 3.45 --4.30 1.27 BSC 0.51 0.61 0.71 0.51 ----0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --12 _ 0.10 C SOLDERING FOOTPRINT* SIDE VIEW 8X DETAIL A b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN e/2 L 1 4 K 1.000 0.965 1.330 2X 0.905 2X 0.495 E2 L1 6 G M 4.530 3.200 0.475 5 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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