Ordering number : EN6982B Bi-CMOS IC For Portable MD LV8018W 4ch PWM H-bridge Driver Overview The LV8018W is 4-chnnel PWM-drive H-bridge driver for portable MD. Functions • 4-chnnel PWM-drive H-bridge driver. • Built-in charge pump circuit. • Built-in thermal shutdown circuit. Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Supply voltage (Output block ) VBAT max 7 V Supply voltage (Control block ) VCC max 7 V Predrive voltage (gate voltage) VG max 9.5 V Maximum output current (ch1-ch4) IO max 500 mA Allowable power dissipation Pd max 0.5 W Operating temperature Topr -20 to +85 °C Storage temperature Tstg -55 to +150 °C Independent IC Operating Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Recommended supply voltage (Output block ) VBAT max 7 V Recommended supply voltage (Control block ) VCC max 7 V Predrive voltage (gate voltage) VG max 9.5 V Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. N1908 MS / 41107 TI PC B8-5701 No.6982-1/7 LV8018W Electrical Characteristics at Ta = 25°C, VCC1, 2 = 3.0V, VBAT = 3.0V Parameter Symbol Ratings Conditions min Standby current dissipation ICCO Current dissipation ICC (A) Predrive block current Unit typ max 10 µA 1.9 mA 1.0 1.5 mA 70 105 µA VGOFF = “L” 1.4 ICC (B) VGOFF = “H” IGO VG = 7V, each logic input = “L” dissipation IG VG = 7, input frequency 88kHz 1.0 1.5 mA S/S bias current ISS S/S = 3.0V 80 120 µA S/S input “High” voltage VSSH VCC2-0.6 VCC1 V S/S input “Low” voltage VSSL 0 VBATT/2 set voltage accuracy ∆VMON VBATT/2 limit voltage VMONLIM VBATT monitor input resistance RMON Logic input bias current ILG Logic input “High” voltage VLGH Logic input “Low” voltage VLGL VCC1-0.2 VCC1 35 50 0.6 V ±10 % V 75 kΩ ±1 µA VCC2-0.6 VCC2 V 0 0.6 V Booster circuit Output voltage VGO No load 8.5 VG IGOUT = -1mA Output oscillation-frequency FOSC Clamp voltage VGLIM VGOFF = “L”, VCC1, 2 = 3.6V 8.8 V 6.7 7.2 100 115 130 kHz V 9.2 9.5 9.8 V MOS driver output stage (VG = 7V) Output ON resistance Ron1, 2, 3, 4 IO = 100mA, sum of upper and lower outputs 1.3 2.0 Ω Output propagation delay time TRISE * 0.2 1.0 µs YFALL * 0.1 0.7 µs Tmin Output pulse width ≥ (2/3) Tmin * 200 Operating temperature TSD * 150 Hysteresis width ∆TSD * Minimum pulse width ns TSD circuit 180 °C 30 °C * : “Design” indicates the design target, not the measured value. Package Dimensions unit : mm (typ) 3163B Pd max -- Ta 36 0.5 9.0 7.0 25 24 7.0 9.0 37 48 13 1 12 0.5 0.18 0.15 0.5 Independent IC 0.4 0.3 0.26 0.2 0.1 0 20 40 60 Ambient temperature, Ta -- °C 80 85 100 (1.5) 0 -20 0.1 1.7max (0.75) Allowable power dissipation, Pd max -- W 0.6 SANYO : SQFP48(7X7) No.6982-2/7 LV8018W IN4R VGOFF CP4 CP3 CP2 CP1 VCC2 GND S/S VBATT 1/2VBATT MON IN2R Pin Assignment 36 35 34 33 32 31 30 29 28 27 26 25 24 IN2F IN4F 37 PGND6 38 23 PGND3 OUT4F 39 22 OUT2F 21 BAT2 BAT4 40 20 OUT2R OUT4R 41 PGND5 42 19 PGND2 LV8018W OUT3F 43 18 OUT1F Top view BAT3 44 17 BAT1 OUT3R 45 16 OUT1R PGND4 46 15 PGND1 4 5 6 7 8 9 10 11 12 VCC1 IN3− NC NC NC MUTE1 3 VG 2 NC 1 NC 13 IN1R NC NC 48 IN3+ 14 IN1F MUTE NC 47 Truth table Ch1, 2, 4 (for focus, tracking, and traverse) S/S MUTE1 IN1, 2, 4F IN1, 2, 4R OUT1, 2, 4F OUT1, 2, 4R L H H L L L H H H L H L H H L H L H H H H H L L H L × × Z Z L × × × Z Z MUTE IN3+ IN3- OUT3F OUT3R L × : Don’t Care, Z : Open Ch3 (for spindle) S/S H H L L L H H H L H L H H L H L L H H H H L H H L × × Z Z L × × × Z Z × : Don’t Care, Z : Open No.6982-3/7 30 29 7 Vref VGOFF 35 S/S 28 IN4R 36 Chip selector 0.1µF VG detection Control logic Control logic Control logic Control logic 0.1µF 20 21 CP3 CP4 Charge pump 18 19 CP1 CP2 Internal oscillator TSD MUTE1 circuit MUTE1 12 IN4F 37 MUTE circuit MUTE 1 IN3+ 2 IN3− 8 IN2R 25 IN2F 24 GND VCC1 IN1R 14 IN1F 13 VCC2 Predriver Predriver Predriver Predriver BATT MONITOR CH4 (H bridge) CH3 (H bridge) CH2 (H bridge) CH1 (H bridge) VBATT VG PGND6 OUT4R OUT4F BAT4 PGND5 PGND4 OUT3R OUT3F BAT3 PGND3 OUT2R OUT2F BAT2 PGND2 PGND1 OUT1R OUT1F BAT1 1µF Traverse Spindle Tracking Focus 26 1/2VBATT MON 27 6 38 41 39 40 42 46 45 43 44 23 20 22 21 19 15 16 18 17 LV8018W Block Diagram * Constants of external parts are for reference and not guaranteed No.6982-4/7 LV8018W Pin Functions Pin No. 1 Pin neme MUTE Function Equivalent Circuit Channel 3 MUTE pin. L for MUTE ON. VCC2 VCC2 VCC2 VCC2 VCC2 VCC2 VCC2 VCC2 1 2 8 IN3+ IN3- Input pins, each on the forward side and reverse side of Channel 3. (Digital input) 2 8 6 VG Pin to provide the supply voltage to the predrive. With VGOFF = “L”, the output voltage of booster circuit is output to this pin. This voltage acts directly as the supply voltage of predrive. 7 VCC1 12 MUTE1 Pin to provide the supply voltage of analog signal system. MUTE pin common to Channel 1, 2, and 4. L for MUTE ON. 12 14 IN1F Input pins, each on the forward side and reverse sides of 13 IN1R Channel 1. (Digital input) 13 14 18 OUT1F OUT1F : Channel 1 forward side output pin. 16 OUT1R OUT1R : Channel 1 reverse side output pin. 17 BAT1 BAT1 : Channel 1 output power pin. 15 PGND1 PGND1, 2 : Power GND pin. 19 PGND2 17 16 18 15 22 OUT2F OUT2F : Channel 2 forward side output pin. 20 OUT2R OUT2R : Channel 2 reverse side output pin. 21 BAT2 BAT2 : Channel 2 output power pin. 23 PGND3 PGND3 : Power GND pin. 19 21 22 20 23 24 IN2F Input pins, each on the forward side and reverse side of 25 IN2R Channel 2. (Digital input) Transistor under a neighboring H 19 VCC2 Transistor under a neighboring H VCC2 24 25 Continued on next page. No.6982-5/7 LV8018W Continued from preceding page. Pin No. Pin neme Function 27 VBATT Output power connection pin 26 1/2VBATT MON Pin to monitor 1/2 of output power supply. Equivalent Circuit VCC1 27 Used to monitor the output power supply at the digital servo and to correct the voltage dependence of servo. 26 28 S/S Start/stop pin. VCC1 H for start and L for stop. 28 29 GND 30 VCC2 Signal GND pin. Pin to provide supply voltage of the logic signal system. 31 CP1 CP1, 3 : Switching pins of booster circuit 32 CP2 CP2, 4 : Pins to which the rectifier transistor of booster 33 CP3 34 CP4 circuit is connected VCC2 32 34 6 31 35 VGOFF Booster circuit ON/OFF selector pin. L for booster circuit ON 33 VCC2 VCC2 VCC2 VCC2 H for booster circuit OFF 35 37 IN4F Input pins, each on the forward side and reverse side of 36 IN4R Channel 4. 36 37 39 OUT4F OUT4F : Channel 4 forward side output pin. 41 OUT4R OUT4R : Channel 4 reverse side output pin. 40 BAT4 BAT4 : Channel 4 output power pin. 42 PGND5 PGND5, 6 : Power GND pin. 38 PGND6 40 39 41 38 43 OUT3F OUT3F : Channel 3 forward side output pin. 45 OUT3R OUT3R : Channel 3 reverse side output pin. 44 BAT3 BAT3 : Channel 3 output power pin. 46 PGND4 PGND4 : Power GND pin. 42 Transistor under a neighboring H 44 45 46 43 42 Transistor under a neighboring H No.6982-6/7 LV8018W Cautions for use 1. Apply power in the order from VCC to each BAT. When the external power supply is used for VG, apply power in the order from VCC, through VG, to each BAT. For each BAT, turn ON power supply after complete rising of VCC and VG voltages. 2. Each power supply must be stabilized by inserting a capacitor to GND to prevent entry of ripple and noise. In particular, the capacitor of sufficient capacitance must be used for the output because the large current flows here. The capacitor to be inserted in each power supply should be installed as near as possible to the IC pin. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2008. Specifications and information herein are subject to change without notice. PS No.6982-7/7