TIG064E8 Ordering number : ENA1602 SANYO Semiconductors DATA SHEET TIG064E8 N-Channel IGBT Light-Controlling Flash Applications Features • • • • • • • Low-saturation voltage. Low voltage drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Symbol Conditions VCES VGES Ratings Unit 400 V ±4 V ±5 V VGES ICP PW≤1ms VGE=2.5V, CM=100μF 150 A VCE≤320V, starting Tch=25°C 400 V / μs Channel Temperature dVCE / dt Tch Storage Temperature Tstg Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt 150 °C -40 to +150 °C Marking : ZD * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N1809PJ TK IM TC-00002186 No. A1602-1/5 TIG064E8 Electrical Characteristics at Ta=25°C Parameter Symbol Collector-to-Emitter Breakdown Voltage Ratings Conditions min typ Unit max V(BR)CES ICES IGES IC=2mA, VGE=0V VCE=320V, VGE=0V Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) VCE=10V, IC=1mA IC=100A, VGE=2.5V Input Capacitance Cies VCE=10V, f=1MHz 3100 pF Output Capacitance Coes VCE=10V, f=1MHz 30 pF Reverse Transfer Capacitance Cres VCE=10V, f=1MHz 23 pF Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage 400 V VGE=±4V, VCE=0V Package Dimensions 0.4 4.2 8 7 6 2.9 0.25 μA 0.9 V 7 V 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector 0.15 5 2.3 0 t o 0.02 2.8 ±10 5 Top View 1 2 3 4 Top view 4 1 0.65 0.3 0.9 0.25 μA Electrical Connection unit : mm (typ) 7011A-004 8 10 0.07 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 Bot t om View Fig.1 Large Current R Load Switching Circuit RL CM + VCC RG TIG064E8 VGE 100kΩ Note1. Gate Series Resistance RG ≥ 160Ω is recommended for protection purpose at the time of turn OFF. However, if dv / dt ≤ 400V / μs is satisfied at customer’s actual set evaluation, RG < 160Ω can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off. No. A1602-2/5 TIG064E8 Collector Current, IC -- A 1.8V 75 50 4 5 6 7 8 9 VCE -- VGE 8 7 6 5 130A 4 100A 3 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V 7 6 IC=150A 5 130A 100A 4 3 2 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V C 25° C 4.0 IT15155 8 7 6 5 IC=150A 130A 4 100A 3 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IT15157 VCE(sat) -- Tc VGE=2.5V 9 8 7 0A 13 6 0A 10 5 4 3 --25 0 25 50 100 75 125 Case Temperature, Tc -- °C IT15158 f=1MHz Cies 3 150 IT15159 Cies, Coes, Cres -- VCE 7 5 2 Cies, Coes, Cres -- pF 0.7 0.6 0.5 0.4 0.3 0.2 1000 7 5 3 2 100 7 5 Coes 3 Cres 2 0.1 0 --50 3.5 Tc=25°C 2 --50 5.0 VCE=10V IC=1mA 0.8 3.0 9 10 VGE(off) -- Tc 0.9 2.5 Gate-to-Emitter Voltage, VGE -- V Tc= 75°C 8 2.0 VCE -- VGE 2 1.0 5.0 9 1.5 10 IT15156 VCE -- VGE 10 1.0 Gate-to-Emitter Voltage, VGE -- V Tc= --25°C IC=150A 0.5 0 IT15154 9 2 1.0 0 10 A 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V 50 50 2 10 Collector-to-Emitter Voltage, VCE -- V 75 IC =1 1 Collector-to-Emitter Voltage, VCE -- V 0 Collector-to-Emitter Voltage, VCE -- V Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 100 25 25 0 --25 ° 125 0V 100 VCE=10V Tc= 3.0 V V 2.5 V GE = 4. Collector Current, IC -- A 125 IC -- VGE 150 Tc=25°C 75 ° C IC -- VCE 150 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT15160 10 7 0 2 4 6 8 10 12 14 16 Collector-to-Emitter Voltage, VCE -- V 18 20 IT15161 No. A1602-3/5 TIG064E8 SW Time -- ICP 7 3 2 1000 tr 7 5 3 td(on) 2 5 7 2 100 dVCE / dt -- RG Turn OFF dv / dt, dVCE / dt -- V / μs 600 1000 7 5 ) t d(on 3 2 500 400 300 200 100 50 100 150 200 250 300 350 Gate Series Resistance, RG -- Ω CM -- ICP 300 Tc=25°C 150 100 50 0 20 40 60 80 100 120 Collector Current (Pulse), ICP -- A 100 140 160 IT15166 150 200 250 300 350 400 IT15163 ICP -- VGE 180 VCE=320V CM=100μF 160 Tc=25°C 140 Tc=70°C 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Gate-to-Emitter Voltage, VGE -- V IT15164 Tc=70°C 200 50 Gate Series Resistance, RG -- Ω 400 VGE=2.5V VCE=320V 250 0 IT15162 Switching test circuit Fig.1 VGE=2.5V VCC=320V ICP=150A CM=100μF PW=50μs 0 0 Maximum Capacitor, CM -- μF 2 7 3 Collector Current (Pulse), ICP -- A 3 500 Turn OFF dv / dt, dVCE / dt -- V / μs 2 Collector Current (Pulse), ICP -- A 0 3 100 100 7 Switching test circuit Fig.1 VGE=2.5V VCC=320V f) t d(of ICP=100A tf CM=100μF PW=50μs tr 5 Switching Time, SW Time -- ns Switching Time, SW Time -- ns 5 SW Time -- RG 7 Switching test circuit Fig.1 VGE=2.5V VCC=320V td (off ) RG=180Ω tf CM=100μF PW=50μs dVCE / dt -- Turn OFF IC VGE=2.5V Tc=25°C 280V 400 5.5 IT15165 270V VCE=330V 320V 310V 300V 290V 300 200 100 0 0 20 40 60 80 100 120 140 Turn OFF Collector Current, Turn OFF IC -- A 160 IT15167 No. A1602-4/5 TIG064E8 Note : TIG064E8 has protection diode between gate and emitter but handling it requires sufficient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2009. Specifications and information herein are subject to change without notice. PS No. A1602-5/5