SEMiX171KH16s Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 170 Tc = 100 °C 125 A Tj = 25 °C 5400 A Tj = 130 °C 4800 A Tj = 25 °C 146 kA2s Tj = 130 °C 115 kA2s VRSM 1700 V VRRM 1600 V IT(AV) ITSM i2t 2 it ® SEMiX 1s sinus 180° 10 ms 10 ms VDRM (di/dt)cr Tj = 130 °C Rectifier Thyr./Diode Module (dv/dt)cr Tj = 130 °C SEMiX171KH16s Tj Preliminary Data Module Features Visol Terminal height 17 mm Chips soldered directly to isolated substrate Typical Applications Input Bridge Rectifier for AC/DC motor control power supply Tstg AC sinus 50Hz 1600 V 200 A/µs 1000 V/µs -40 ... 130 °C -40 ... 125 °C 1 min 4000 V 1s 4800 V Characteristics Symbol Conditions min. typ. max. Unit Chip VT Tj = 25 °C, IT = 500 A 1.6 V VT(TO) Tj = 130 °C 0.85 V rT Tj = 130 °C 1.5 mΩ IDD;IRD Tj = 130 °C, VDD = VDRM; VRD = VRRM 60 mA tgd Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs 1 µs tgr VD = 0.67 * VDRM 2 µs tq Tj = 130 °C IH Tj = 25 °C µs 150 400 mA 300 1000 mA IL Tj = 25 °C, RG = 33 Ω VGT Tj = 25 °C, d.c. 2 V IGT Tj = 25 °C, d.c. 150 mA VGD Tj = 130 °C, d.c. IGD Tj = 130 °C, d.c. 0.25 10 V mA Rth(j-c) per thyristor Rth(j-c) per thyristor 0.18 K/W per diode 0.18 K/W K/W per diode sin. 180° Rth(j-c) K/W per thyristor K/W per diode K/W Module Rth(c-s) K/W per module 0.075 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm 5 * 9,81 m/s2 a w 145 g KH © by SEMIKRON Rev. 1 – 09.12.2008 1 SEMiX171KH16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 2L: Power dissipation of one module vs. rms current Fig. 2R: Power dissipation of one module vs. case temperature Fig. 3L: Power dissipation of two modules vs. direct current Fig. 3R: Power dissipation of two modules vs. case temperature 2 Rev. 1 – 09.12.2008 © by SEMIKRON SEMiX171KH16s Fig. 4L: Power dissipation of three modules vs. direct current Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time © by SEMIKRON Rev. 1 – 09.12.2008 3 SEMiX171KH16s Fig. 9: Gate trigger characteristics KH SEMiX 1s This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 Rev. 1 – 09.12.2008 © by SEMIKRON