SILAN SVD8N60F

SVD8N60T/SVD8N60F
8A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD8N60T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure DMOS technology. The improved planar stripe
cell and the improved guarding ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗ 8A,600V,RDS(on) typ =0.96Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
Package
Marking
Shipping
SVD8N60T
TO-220-3L
SVD8N60T
50Unit/Tube
SVD8N60F
TO-220F-3L
SVD8N60F
50Unit/Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Symbol
SVD8N60F
SVD8N60T
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
ID
8.0
A
Drain Current
Drain Current Pulsed
Power Dissipation(TC=25°C)
-Derate above 25°C
IDM
PD
28
A
147
48
W
1.18
0.38
W/°C
Single Pulsed Avalanche Energy (Note 1)
EAS
530
mJ
Repetitive Avalanche Energy
EAR
14.2
mJ
Operation Junction Temperature
Storage Temperature
TJ
-55
+150
°C
Tstg
-55
+150
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 1 of 7
SVD8N60T/SVD8N60F
THERMAL CHARACTERISTICS
Symbol
SVD8N60T
SVD8N60F
Unit
Thermal Resistance, Junction-to-Case
R JC
0.85
2.6
°C/W
Thermal Resistance, Junction-to-Ambient
R JA
62.5
62.5
°C/W
Parameter
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter
Symbol
Drain -Source Breakdown Voltage
BVDSS
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Min.
Typ.
Max.
Unit
VGS=0V, ID=250µA
600
--
--
V
IDSS
VDS=600V, VGS=0V
--
--
10
µA
IGSS
VGS=±30V, VDS=0V
--
--
±100
nA
VGS(th)
VGS= VDS, ID=250µA
2.0
--
4.0
V
RDS(on)
VGS=10V, ID=3.5A
--
0.96
1.2
Ω
--
1095
--
93
--
pF
--
2
--
--
39
--
--
29
--
--
248
--
--
36
--
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Test conditions
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=7.0A,
RG=25Ω
ns
(Note 2,3)
Turn-off Fall Time
tf
Total Gate Charge
Qg
VDS=480V,ID=7.0A,
--
26.8
--
Gate-Source Charge
Qgs
VGS=10V
--
5.1
--
Gate-Drain Charge
Qgd
--
8.5
--
Min.
Typ.
Max.
--
--
8.0
--
--
28
(Note 2,3)
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Continuous Source Current
Symbol
IS
Test conditions
Integral
Reverse
Junction
Diode
in
P-N
the
Unit
A
Pulsed Source Current
ISM
Diode Forward Voltage
VSD
IS=8.0A,VGS=0V
--
--
1.4
V
Reverse Recovery Time
Trr
IS=8.0A,VGS=0V,
--
365
--
ns
Reverse Recovery Charge
Qrr
dIF/dt=100A/µS
--
3.4
--
µC
MOSFET
Notes:
1.
L=19.5mH,IAS=7.0A,VDD=50V,RG=25Ω,starting TJ=25°C;
2. Pulse Test: Pulse width 300 s,Duty cycle 2%;
3. Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 2 of 7
SVD8N60T/SVD8N60F
NOMENCLATURE
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 3 of 7
SVD8N60T/SVD8N60F
TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 4 of 7
SVD8N60T/SVD8N60F
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
as DUT
50
Qg
10V
VDS
200nF
12V
VGS
300nF
Qgs
Qgd
VGS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveform
RL
VDS
VDS
90%
VGS
VDD
RG
10%
VGS
DUT
10V
td(on)
tr
ton
td(off)
tf
toff
Unclamped Inductive Switching Test Circuit & Waveform
L
EAS =
VDS
BVDSS
1
2
2 LIAS BVDSS - VDD
BVDSS
ID
IAS
VDD
RG
ID(t)
10V
DUT
tp
VDS(t)
VDD
Time
tp
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 5 of 7
SVD8N60T/SVD8N60F
PACKAGE OUTLINE
UNIT: mm
TO-220-3L(Two)
UNIT: mm
13.1±0.5
3.95MAX
15.1~15.9
6.10~6.80
TO-220-3L(One)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 6 of 7
SVD8N60T/SVD8N60F
PACKAGE OUTLINE (continued)
UNIT: mm
L
12.6~13.8
12.4±0.4
A
6.70±0.20
TO-220F-3L(One)
TO-220F-3L(Two)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
UNIT: mm
REV:1.0
2009.07.09
Page 7 of 7