SVD8N60T/SVD8N60F 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 8A,600V,RDS(on) typ =0.96Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. Package Marking Shipping SVD8N60T TO-220-3L SVD8N60T 50Unit/Tube SVD8N60F TO-220F-3L SVD8N60F 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Symbol SVD8N60F SVD8N60T Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V ID 8.0 A Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C IDM PD 28 A 147 48 W 1.18 0.38 W/°C Single Pulsed Avalanche Energy (Note 1) EAS 530 mJ Repetitive Avalanche Energy EAR 14.2 mJ Operation Junction Temperature Storage Temperature TJ -55 +150 °C Tstg -55 +150 °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 1 of 7 SVD8N60T/SVD8N60F THERMAL CHARACTERISTICS Symbol SVD8N60T SVD8N60F Unit Thermal Resistance, Junction-to-Case R JC 0.85 2.6 °C/W Thermal Resistance, Junction-to-Ambient R JA 62.5 62.5 °C/W Parameter ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter Symbol Drain -Source Breakdown Voltage BVDSS Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Min. Typ. Max. Unit VGS=0V, ID=250µA 600 -- -- V IDSS VDS=600V, VGS=0V -- -- 10 µA IGSS VGS=±30V, VDS=0V -- -- ±100 nA VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V RDS(on) VGS=10V, ID=3.5A -- 0.96 1.2 Ω -- 1095 -- 93 -- pF -- 2 -- -- 39 -- -- 29 -- -- 248 -- -- 36 -- Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Test conditions VDS=25V,VGS=0V, f=1.0MHZ VDD=300V,ID=7.0A, RG=25Ω ns (Note 2,3) Turn-off Fall Time tf Total Gate Charge Qg VDS=480V,ID=7.0A, -- 26.8 -- Gate-Source Charge Qgs VGS=10V -- 5.1 -- Gate-Drain Charge Qgd -- 8.5 -- Min. Typ. Max. -- -- 8.0 -- -- 28 (Note 2,3) nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Continuous Source Current Symbol IS Test conditions Integral Reverse Junction Diode in P-N the Unit A Pulsed Source Current ISM Diode Forward Voltage VSD IS=8.0A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=8.0A,VGS=0V, -- 365 -- ns Reverse Recovery Charge Qrr dIF/dt=100A/µS -- 3.4 -- µC MOSFET Notes: 1. L=19.5mH,IAS=7.0A,VDD=50V,RG=25Ω,starting TJ=25°C; 2. Pulse Test: Pulse width 300 s,Duty cycle 2%; 3. Essentially independent of operating temperature. HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 2 of 7 SVD8N60T/SVD8N60F NOMENCLATURE TYPICAL CHARACTERISTICS HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 3 of 7 SVD8N60T/SVD8N60F TYPICAL CHARACTERISTICS (continued) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 4 of 7 SVD8N60T/SVD8N60F TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform Same Type as DUT 50 Qg 10V VDS 200nF 12V VGS 300nF Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform RL VDS VDS 90% VGS VDD RG 10% VGS DUT 10V td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform L EAS = VDS BVDSS 1 2 2 LIAS BVDSS - VDD BVDSS ID IAS VDD RG ID(t) 10V DUT tp VDS(t) VDD Time tp HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 5 of 7 SVD8N60T/SVD8N60F PACKAGE OUTLINE UNIT: mm TO-220-3L(Two) UNIT: mm 13.1±0.5 3.95MAX 15.1~15.9 6.10~6.80 TO-220-3L(One) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 6 of 7 SVD8N60T/SVD8N60F PACKAGE OUTLINE (continued) UNIT: mm L 12.6~13.8 12.4±0.4 A 6.70±0.20 TO-220F-3L(One) TO-220F-3L(Two) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn UNIT: mm REV:1.0 2009.07.09 Page 7 of 7