SVD2N60T 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION 2 SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary TM Rin S- structure DMOS technology. The improved planar stripe cell 1 and the improved guarding ring terminal have been especially 3 tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche 1.Gate 2.Drain 3.Source and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 12 3 FEATURES TO-220-3L ∗ 2A,600V,RDS(on)(typ.)=4.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. Package Marking Shipping SVD2N60T TO-220-3L SVD2N60T 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V ID 2.0 A IDM 8 A 44 W 0.22 W/°C Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C PD Single Pulsed Avalanche Energy (Note 1) EAS 120 mJ Repetitive Avalanche Energy EAR 5.4 mJ Operation Junction Temperature Storage Temperature TJ -55 +150 °C Tstg -55 +150 °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2009.07.09 Page 1 of 6 SVD2N60T THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case R JC 2.87 °C/W Thermal Resistance, Junction-to-Ambient R JA 100 °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Parameter Min. Typ. Max. Unit BVDSS VGS=0V, ID=250µA 600 -- -- V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V RDS(on) VGS=10V, ID=1.0A -- 4.0 4.6 Ω -- 320 380 -- 30 45 -- 3 5.6 -- 13 30 -- 12 60 -- 73 100 -- 14.3 70 Drain -Source Breakdown Voltage Gate Threshold Voltage Static Drain- Source On State Resistance Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Test conditions VDS=25V,VGS=0V, f=1.0MHZ VDD=300V,ID=2.0A, RG=25Ω pF ns (Note 2,3) Turn-off Fall Time tf Total Gate Charge Qg VDS=480V,ID=2.0A, -- 9.3 13 Gate-Source Charge Qgs VGS=10V -- 2.0 -- Gate-Drain Charge Qgd -- 3.3 -- Min. Typ. -- -- 2 -- -- 8.0 (Note 2,3) nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Continuous Source Current Symbol IS Test conditions Integral Reverse P-N Junction Diode in the Max . Unit A Pulsed Source Current ISM Diode Forward Voltage VSD IS=2.0A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=2.0A,VGS=0V, -- 230 -- ns Reverse Recovery Charge Qrr dIF/dt=100A/µS -- 1.0 -- µC MOSFET Notes: 1. L=56mH, IAS=2.0A,VDD=50V,RG=25Ω,starting TJ=25°C; 2. Pulse Test: Pulse width 300 s,Duty cycle 2%; 3. Essentially independent of operating temperature. HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2009.07.09 Page 2 of 6 SVD2N60T NOMENCLATURE TYPICAL CHARACTERISTICS Figure 1. On-Region Characteristics 1.0 Figure 2. Transfer Characteristics 100.00 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom: 4.5 V 10.00 4.5V 150 1.00 25 -55 0.10 Note: 1.V GS=40V 2. 250 s pulse test Note: 1. 250 s Pulse Test 2. TC=25 C 0.1 10 1 0.01 0 2 4 6 8 10 VDS Drain-source voltage[V] VGS Gate-Source Voltage [V] Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10.0 10.0 8.0 VGS=10V VGS=20V 6.0 1.0 150 4.0 25 Note: 1.VGS=0V 2. 250 s pulse test 2.0 Note:TJ=25 C 0.1 0.0 0.0 1.0 2.0 3.0 4.0 5.0 ID Drain Current [A] HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD Source-Drain Voltage [V] REV:1.2 2009.07.09 Page 3 of 6 Capasistance [pF] VGS Gate-Source Voltage [V] BVDSS(Normalized) Drain-Source Breakdown Voltage RDS(ON) (Normalized) Drain-Source On-Resistance SVD2N60T TYPICAL CHARACTERISTICS (continued) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2009.07.09 Page 4 of 6 SVD2N60T TYPICAL TEST CIRCUIT HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2009.07.09 Page 5 of 6 SVD2N60T PACKAGE OUTLINE UNIT: mm TO-220-3L Two UNIT: mm 13.1±0.5 3.95MAX 15.1~15.9 6.10~6.80 TO-220-3L(One) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2009.07.09 Page 6 of 6