SILAN SVD2N60T

SVD2N60T
2A, 600V N-Channel MOSFET
GENERAL DESCRIPTION
2
SVD2N60T is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary
TM
Rin
S-
structure DMOS technology. The improved planar stripe cell
1
and the improved guarding ring terminal have been especially
3
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
1.Gate 2.Drain 3.Source
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
12
3
FEATURES
TO-220-3L
∗
2A,600V,RDS(on)(typ.)=4.0Ω@VGS=10V
∗
Low gate charge
∗
Low Crss
∗
Fast switching
∗
Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
Package
Marking
Shipping
SVD2N60T
TO-220-3L
SVD2N60T
50Unit/Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
ID
2.0
A
IDM
8
A
44
W
0.22
W/°C
Drain Current
Drain Current Pulsed
Power Dissipation(TC=25°C)
-Derate above 25°C
PD
Single Pulsed Avalanche Energy (Note 1)
EAS
120
mJ
Repetitive Avalanche Energy
EAR
5.4
mJ
Operation Junction Temperature
Storage Temperature
TJ
-55
+150
°C
Tstg
-55
+150
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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2009.07.09
Page 1 of 6
SVD2N60T
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
R JC
2.87
°C/W
Thermal Resistance, Junction-to-Ambient
R JA
100
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter
Min.
Typ.
Max.
Unit
BVDSS
VGS=0V, ID=250µA
600
--
--
V
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
--
--
1.0
µA
Gate-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
--
--
±100
nA
VGS(th)
VGS= VDS, ID=250µA
2.0
--
4.0
V
RDS(on)
VGS=10V, ID=1.0A
--
4.0
4.6
Ω
--
320
380
--
30
45
--
3
5.6
--
13
30
--
12
60
--
73
100
--
14.3
70
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Symbol
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Test conditions
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=2.0A,
RG=25Ω
pF
ns
(Note 2,3)
Turn-off Fall Time
tf
Total Gate Charge
Qg
VDS=480V,ID=2.0A,
--
9.3
13
Gate-Source Charge
Qgs
VGS=10V
--
2.0
--
Gate-Drain Charge
Qgd
--
3.3
--
Min.
Typ.
--
--
2
--
--
8.0
(Note 2,3)
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Continuous Source Current
Symbol
IS
Test conditions
Integral Reverse P-N
Junction Diode in the
Max
.
Unit
A
Pulsed Source Current
ISM
Diode Forward Voltage
VSD
IS=2.0A,VGS=0V
--
--
1.4
V
Reverse Recovery Time
Trr
IS=2.0A,VGS=0V,
--
230
--
ns
Reverse Recovery Charge
Qrr
dIF/dt=100A/µS
--
1.0
--
µC
MOSFET
Notes:
1.
L=56mH, IAS=2.0A,VDD=50V,RG=25Ω,starting TJ=25°C;
2. Pulse Test: Pulse width 300 s,Duty cycle 2%;
3. Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2009.07.09
Page 2 of 6
SVD2N60T
NOMENCLATURE
TYPICAL CHARACTERISTICS
Figure 1. On-Region Characteristics
1.0
Figure 2. Transfer Characteristics
100.00
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
10.00
4.5V
150
1.00
25
-55
0.10
Note:
1.V GS=40V
2. 250 s pulse test
Note:
1. 250 s Pulse Test
2. TC=25 C
0.1
10
1
0.01
0
2
4
6
8
10
VDS Drain-source voltage[V]
VGS Gate-Source Voltage [V]
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs.
Source Current and Temperature
10.0
10.0
8.0
VGS=10V
VGS=20V
6.0
1.0
150
4.0
25
Note:
1.VGS=0V
2. 250 s pulse test
2.0
Note:TJ=25 C
0.1
0.0
0.0
1.0
2.0
3.0
4.0
5.0
ID Drain Current [A]
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VSD Source-Drain Voltage [V]
REV:1.2
2009.07.09
Page 3 of 6
Capasistance [pF]
VGS Gate-Source Voltage [V]
BVDSS(Normalized)
Drain-Source Breakdown Voltage
RDS(ON) (Normalized)
Drain-Source On-Resistance
SVD2N60T
TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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REV:1.2
2009.07.09
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SVD2N60T
TYPICAL TEST CIRCUIT
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2009.07.09
Page 5 of 6
SVD2N60T
PACKAGE OUTLINE
UNIT: mm
TO-220-3L Two
UNIT: mm
13.1±0.5
3.95MAX
15.1~15.9
6.10~6.80
TO-220-3L(One)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2009.07.09
Page 6 of 6