STMICROELECTRONICS BUL742C_08

BUL742C
BULB742C
High voltage fast-switching
NPN power transistor
Features
■
Low spread of dynamic parameters
■
High voltage capability
■
Minimum lot-to-lot spread for reliable operation
■
Very high switching speed
3
1
Applications
■
Electronic ballast for fluorescent lighting
■
Switch mode power supplies
3
12
2
I2PAK
TO-220
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
Table 1.
Figure 1.
Device summary
Order code
Marking
Package
BUL742C
BUL742C
TO-220
BULB742C-1
BULB742C
I2PAK
May 2008
Internal schematic diagram
Rev 3
Packaging
Tube
1/12
www.st.com
12
Contents
BUL742C - BULB742C
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
BUL742C - BULB742C
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VBE = 0)
1050
V
VCEO
Collector-emitter voltage (IB = 0)
400
V
VEBO
Emitter-base voltage (IC = 0, IB = 2 A, tp < 10 ms)
V(BR)EBO
V
Collector current
4
A
Collector peak current (tP < 5ms)
8
A
Base current
2
A
IBM
Base peak current (tP < 5ms)
4
A
Ptot
Total dissipation at Tc = 25°C
70
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
Rthj-case Thermal resistance junction - case
1.79
°C/W
Rthj-amb
62.5
°C/W
IC
ICM
IB
TJ
Table 3.
Symbol
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction - ambient
3/12
Electrical characteristics
2
BUL742C - BULB742C
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE =1050 V
0.2
10
µA
ICEO
Collector cut-off current
(IB = 0)
VCE =400 V
10
250
µA
V(BR)EBO
Emitter base breakdown
voltage (IC = 0)
IE = 1 mA
15
19
24
V
IC =10 mA
400
450
Collector-emitter
VCEO(sus) (1) sustaining voltage
(IB = 0)
IC = 1 A
0.5
1.5
V
V
IC = 3.5 A
IB = 1 A
1.1
1.5
V
IC = 0.1 A
IC = 0.8 A
_
VCE = 5 V
_ _ VCE = 3 V
75
35
100
50
2.4
350
3.5
500
IC = 3.5 A
VBE(sat) (1)
Base-emitter saturation
voltage
DC current gain
ts
tf
Ear
Repetitive avalanche
energy
IB = 0.2 A
0.15
0.6
Collector-emitter
saturation voltage
Resistive load
Storage time
Fall time
_
V
IB = 1 A
VCE(sat) (1)
hFE (1)
_ _
IC = 2 A
48
25
VCC = 125 V
IB1 = -IB2 = 400 mA
tp = 300 µs
L = 2 mH
VBE(off) = -5 V
1. Pulsed duration = 300 ms, duty cycle ≤1.5%
4/12
Min.
VBE(off) = -5 V
µs
ns
C = 1.8 nF
6
mJ
BUL742C - BULB742C
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
Figure 4.
Output characteristics
Figure 5.
DC current gain
Figure 6.
DC current gain
Figure 7.
Collector - emitter saturation
voltage
5/12
Electrical characteristics
Figure 8.
6/12
Base-emitter saturation
voltage
BUL742C - BULB742C
Figure 9.
Resistive load switching on
times (hFE = 5)
Figure 10. Resistive load switching off
times (hFE = 5)
Figure 11. Resistive load switching on
times (hFE = 10)
Figure 12. Resistive load switching off
times (hFE = 10)
Figure 13. Reverse biased SOA
BUL742C - BULB742C
3
Test circuit
Test circuit
Figure 14. Energy rating test circuit
Figure 15. Resistive load switching test circuit
7/12
Package mechanical data
4
BUL742C - BULB742C
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/12
BUL742C - BULB742C
Package mechanical data
I²PAK (TO-262) mechanical data
mm
inch
Dim
Min
A
A1
b
b1
c
c2
D
e
e1
E
L
L1
L2
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
13
3.50
1.27
Typ
Max
Min
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
3.93
1.40
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Typ
Max
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
9/12
Package mechanical data
BUL742C - BULB742C
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
10/12
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
BUL742C - BULB742C
5
Revision history
Revision history
Table 5.
Document revision history
Date
Revision
Changes
21-Jun-2004
1
First release
10-Aug-2007
2
No content changes, document reformatted
27-May-2008
3
Added package I2PAK
11/12
BUL742C - BULB742C
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