BUL741 High voltage fast-switching NPN Power Transistor General features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ In compliance with the 2002/93/EC European Directive 1 Description 2 3 TO-220 The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Internal schematic diagram Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies. Order codes Part number Marking Package Packaging BUL741 BUL741 TO-220 Tube April 2007 Rev 1 1/10 www.st.com 10 Electrical ratings BUL741 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 1050 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0, IB = 2A, tP < 10ms) V(BR)EBO V 2.5 A 5 A 1.5 A IC ICM IB Collector current Collector peak current (tP < 5ms) Base current IBM Base peak current (tP < 5ms) 3 A Ptot Total dissipation at Tc = 25°C 60 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 2.08 °C/W TJ Table 2. Symbol Rthj-case 2/10 Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case __max BUL741 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (V BE =0V) VCE =1050V 0.2 10 µA ICEO Collector cut-off current (IB =0) VCE =400V 10 250 µA V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE =1mA 15 19 24 V 400 450 Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage VBE(sat) (1) Base-emitter saturation voltage hFE ts tf Ear IC =10mA V IC =0.7A IB =0.14A IC =2A IB =0.6A 0.15 0.5 0.5 1.5 V V IC =2A IB =0.6A 1.1 1.5 V IC =0.1A VCE =5V 48 70 100 IC =0.45A VCE =3V 25 35 50 Resistive load Storage time Fall time VCC =125V IC =1A Repetitive avalanche energy L =2mH VBE(off) =-5V DC current gain IB1 = -IB2 =0.2A tp = 300µs 2.5 3.5 µs VBE(off) =-5V 350 500 ns C =1.8nF 5 mJ Note (1) Pulsed duration = 300µs, duty cycle ≤1.5% 3/10 Electrical characteristics 2.1 4/10 BUL741 Typical characteristic Figure 1. Safe operating area Figure 2. Derating curve Figure 3. Output characteristics Figure 4. DC current gain Figure 5. DC current gain Figure 6. Base-emitter saturation voltage BUL741 Electrical characteristics Figure 7. Collector-emitter saturation voltage Figure 8. Figure 9. Resistive load switching on times Figure 10. Resistive load switching off times Figure 11. Resistive load switching off times Resistive load switching on times Figure 12. Reverse biased safe operating area 5/10 Electrical characteristics 2.2 Test circuits Figure 13. Resistive load switching test circuit Figure 14. Energy rating test circuit 6/10 BUL741 BUL741 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data BUL741 TO-220 Mechanical data DIM. mm. MIN. MAX. 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 D 15.25 15.75 D1 1.27 E 10 e 2.40 2.70 e1 4.95 5.15 10.40 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 8/10 TYP A 28.90 øP 3.75 3.85 Q 2.65 2.95 BUL741 Revision history 4 Revision history Table 4. Revision history Date Revision 11-Apr-2007 1 Changes Initial release. 9/10 BUL741 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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