STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) Max ID PTOT STF3NK100Z 1000V < 6Ω 2.5A 25W STP3NK100Z 1000V < 6Ω 2.5A 90W STD3NK100Z 1000V < 6Ω 2.5A 90W 3 1 3 2 1 TO-220 TO-220FP ■ Extremely high dv/dt capability ■ 100% avalanche tested 1 ■ Gate charge minimized DPAK ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability 3 Application ■ 2 Figure 1. Internal schematic diagram Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs. Table 1. Device summary Order codes Marking Package Packaging STF3NK100Z F3NK100Z TO-220FP Tube STP3NK100Z P3NK100Z TO-220 Tube STD3NK100Z D3NK100Z DPAK Tape & reel October 2007 Rev 2 1/16 www.st.com 16 Contents STF3NK100Z - STP3NK100Z - STD3NK100Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 STF3NK100Z - STP3NK100Z - STD3NK100Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220/DPAK TO-220FP VDS Drain-source voltage (VGS = 0) 1000 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 2.5 2.5 (1) A ID Drain current (continuous) at TC = 100°C 1.57 1.57(2) A IDM (2) Drain current (pulsed) 10 10 (2) A PTOT Total dissipation at TC = 25°C 90 25 W 0.72 0.2 W/°C Derating factor VESD(G-S) dv/dt (3) VISO Tj Tstg Gate source ESD (HBM-C=100pF, R=1.5KΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Operating junction temperature Storage temperature 3000 V 4.5 V/ns -- 2500 -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 2.5A, di/dt ≤ 200A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220/DPAK TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max 62.5 Maximum lead temperature for soldering purpose 300 TL Table 4. 1.39 5 °C/W °C/W Avalanche data Symbol Parameter Value Unit IAR (1) Avalanche current, repetitive or not-repetitive 2.5 A EAS (2) Single pulse avalanche energy 110 mJ 1. Pulse width limited by Tjmax 2. Starting Tj = 25°C, ID = IAR, VDD = 50V 3/16 Electrical characteristics 2 STF3NK100Z - STP3NK100Z - STD3NK100Z Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS= 0 Min. Typ. Max. 1000 V VDS = Max rating, 1 50 µA µA Gate body leakage current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 50µA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 1.25A 5.4 6 Ω Typ. Max. Unit Zero gate voltage drain current (VGS = 0) IGSS Symbol gfs (1) 3 Dynamic Parameter Test conditions Min. Forward transconductance VDS =15V, ID = 1.25A 2.4 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 601 53 12 pF pF pF Equivalent output capacitance VGS =0V, VDS =0V to 800V 15 pF RG Gate input resistance f=1 MHz, open drain 8.6 Ω Qg Total gate charge Gate-source charge Gate-drain charge VDD=800V, ID = 2.5A 18 3.6 9.2 nC nC nC Ciss Coss Crss Coss eq.(2) Qgs Qgd VGS =10V (see Figure 17) Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 Unit VDS = Max rating,Tc=125°C IDSS Table 6. 1. On/off STF3NK100Z - STP3NK100Z - STD3NK100Z Table 7. Switching times Symbol Parameter td(on) tr td(off) tr Table 8. Symbol Turn-on delay time Rise time Turn-off delay time Fall time Electrical characteristics Test conditions VDD= 500V, ID= 1.25A, RG=4.7Ω, VGS=10V (see Figure 16) VDD= 500V, ID= 1.25A, RG=4.7Ω, VGS=10V (see Figure 16) Parameter Test conditions ISDM (1) VSD (2) Forward on voltage ISD= 2.5A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5A, di/dt = 100A/µs, VDD= 100V, Tj= 25°C Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5A, di/dt = 100A/µs, VDD= 100V, Tj=150°C trr Qrr IRRM trr Qrr IRRM Typ. Max. Unit 15 7.5 ns ns 39 32 ns ns Source drain diode Source-drain current Source-drain current (pulsed) ISD Min. Min. (see Figure 21) (see Figure 21) Typ. Max. Unit 2.5 10 A A 1.6 V 584 2.3 8 ns µC A 628 2.5 8.1 ns µC A 1. Pulse width limited by package 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 9. Symbol BVGSO (1) Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions IGS = ±1mA (open drain) Min. Typ. Max. Unit 30 V 1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the usage of external components. 5/16 Electrical characteristics STF3NK100Z - STP3NK100Z - STD3NK100Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220/ DPAK Figure 3. Thermal impedance for TO-220/ DPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Figure 8. Normalized BVDSS vs. temperature Electrical characteristics Figure 9. Static drain-source on resistance Figure 10. Gate charge vs. gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs. temperature Figure 13. Normalized on resistance vs. temperature 7/16 Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Figure 15. Maximum avalanche energy vs Tj STF3NK100Z - STP3NK100Z - STD3NK100Z 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/16 Package mechanical data 4 STF3NK100Z - STP3NK100Z - STD3NK100Z Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/16 Package mechanical data STF3NK100Z - STP3NK100Z - STD3NK100Z TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/16 L5 1 2 3 L4 STF3NK100Z - STP3NK100Z - STD3NK100Z Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MAX. MIN. A A1 A2 B b4 MIN. 2.2 0.9 0.03 0.64 5.2 2.4 1.1 0.23 0.9 5.4 0.086 0.035 0.001 0.025 0.204 0.094 0.043 0.009 0.035 0.212 C C2 D D1 E E1 0.45 0.48 6 0.6 0.6 6.2 0.017 0.019 0.236 0.023 0.023 0.244 6.6 0.252 e e1 H L (L1) L2 L4 R V2 TYP 5.1 6.4 0.090 4.6 10.1 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.260 0.185 2.28 0.6 MAX. 0.200 4.7 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 13/16 Packaging mechanical data 5 STF3NK100Z - STP3NK100Z - STD3NK100Z Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STF3NK100Z - STP3NK100Z - STD3NK100Z 6 Revision history Revision history Table 10. Document revision history Date Revision Changes 17-May-2007 1 First release 18-Oct-2007 2 Added DPAK 15/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16