STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH™ Power MOSFET Features VDSS (@Tjmax) Type RDS(on) ID STP7NK80Z 800V < 1.8Ω 5.2A STP7NK80ZFP 800V < 1.8Ω 5.2A STB7NK80Z 800V < 1.8Ω 5.2A STB7NK80Z-1 800V < 1.8Ω 5.2A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability TO-220FP TO-220 3 12 3 1 I2PAK D2PAK Figure 1. Applications ■ 3 2 1 Internal schematic diagram D(2) Switching application Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. Table 1. G(1) S(3) AM01476v1 Device summary Order codes Marking Package Packaging STB7NK80ZT4 B7NK80Z D²PAK Tape e reel STB7NK80Z-1 B7NK80Z I²PAK STP7NK80Z P7NK80Z TO-220 STP7NK80ZFP P7NK80ZFP TO-220FP March 2010 Doc ID 8979 Rev 6 Tube 1/17 www.st.com 17 Contents STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220 D2PAK I2PAK TO-220FP Unit VDS Drain-source voltage (VGS = 0) 800 V VGS Gate- source voltage ± 30 V ID ID IDM (2) PTOT 5.2 5.2 (1) A 3.3 3.3 (1) A Drain current (pulsed) 20.8 20.8(1) A Total dissipation at TC = 25°C 125 30 W 1 0.24 W/°C Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Derating factor VESD(G-S) dv/dt (3) Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC= 25 °C) Tj Tstg Max operating junction temperature Storage temperature 4000 V 4.5 V/ns 2500 V °C °C -55 to 150 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 5.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 3. Thermal data Value Symbol Parameter TO-220 D2PAK I2PAK TO-220FP Rthj-case Thermal resistance junction-case max 1 4.2 Unit °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 4. Symbol Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 5.2 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 210 mJ Doc ID 8979 Rev 6 3/17 Electrical characteristics 2 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage ID =1 mA, VGS = 0 IDSS Zero gate voltage Drain Current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125 °C IGSS Gate-body leakage Current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.6 A Table 6. Symbol Test conditions Min. Typ. Max. Unit 800 V 1 50 µA µA ± 10 µA 3.75 4.5 V 1.5 1.8 Ω Min. Typ. Max. Unit 3 Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS = 15 V, ID = 2.6 A - 5 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 1138 122 25 pF pF pF Coss eq. Equivalent output capacitance VDS =0 , VDS = 0 to 640 V - 50 pF td(on) tr tr(off) tr Turn-on delay time Rise time Turn-off delay time Fall time VDD = 400 V, ID = 2.6 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) - 20 12 45 20 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 640 V, ID = 5.2 A, VGS = 10 V (see Figure 18) - 40 7 21 tr(Voff) tr tc Off-voltage rise time Fall time Cross-over time VDD = 640 V, ID = 5.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) - 12 10 20 (2) 56 nC nC nC ns ns ns 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Table 7. Symbol Electrical characteristics Source drain diode Parameter Test conditions Min. Max. Unit - 5.2 20.8 A A 1.6 V ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 5.2 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.2 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150°C (see Figure 22) - trr Qrr IRRM Typ. 530 3.31 12.5 ns µC A 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Pulse width limited by safe operating area Table 8. Symbol BVGSO Gate-source zener diode Parameter Test conditions Gate-source breakdown voltage IGS= ± 1mA (open drain) Min. 30 Typ. Max. Unit V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 8979 Rev 6 5/17 Electrical characteristics STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D2PAK, I2PAK Figure 3. Thermal impedance for TO-220, D2PAK, I2PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Figure 8. Transconductance Figure 9. Electrical characteristics Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature Doc ID 8979 Rev 6 7/17 Electrical characteristics STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Figure 14. Source-drain diode forward characteristic Figure 15. Normalized BVDSS vs temperature Figure 16. Maximum avalanche energy vs temperature 8/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 8979 Rev 6 10% AM01473v1 9/17 Package mechanical data 4 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 23. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 8979 Rev 6 11/17 Package mechanical data STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S 12/17 Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Package mechanical data I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Doc ID 8979 Rev 6 Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 13/17 Package mechanical data STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z D2PAK (TO-263) mechanical data Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 mm Min Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 in c h Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Typ 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° 0079457_M 14/17 Min Doc ID 8979 Rev 6 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type Doc ID 8979 Rev 6 15/17 Revision history 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Revision history Table 10. 16/17 Revision history Date Revision Changes 09-Sep-2004 3 Complete version 16-Aug-2006 4 New template, no content change 09-Oct-2006 5 Corrected order code 28-Mar-2010 6 Corrected Table 1: Device summary Doc ID 8979 Rev 6 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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