STMICROELECTRONICS STB150NF55T4

STB150NF55
STP150NF55 - STW150NF55
N-channel 55V - 0.005Ω - 120A - D2PAK/TO-220/TO-247
STripFET™ II Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STB150NF55
55V
<0.006Ω
120A(1)
STP150NF55
55V
<0.006Ω
120A(1)
STW150NF55
55V
<0.006Ω
120A(1)
3
1
2
D2PAK
TO-220
1. Current limited by package
■
1
3
100% avalanche tested
Description
TO-247
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Sales type
Marking
Package
2PAK
Packaging
Tape & reel
STB150NF55T4
B150NF55
D
STP150NF55
P150NF55
TO-220
Tube
STW150NF55
W150NF55
TO-247
Tube
June 2006
Rev 3
1/19
www.st.com
19
Contents
STB150NF55 - STP150NF55 - STW150NF55
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
3
Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Test circuit
5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6
Packaging mechanical data
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STB150NF55 - STP150NF55 - STW150NF55
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
VDS
VDGR
Parameter
Value
Unit
Drain-source voltage (VGS = 0)
55
V
Drain-gate voltage (RGS = 20 kΩ)
55
V
VGS
Gate- source voltage
± 20
V
ID(1)
Drain current (continuous) at TC = 25°C
120
A
ID(1)
Drain current (continuous) at TC = 100°C
106
A
Drain current (pulsed)
480
A
Total dissipation at TC = 25°C
300
W
Derating Factor
2
W/°C
Peak diode recovery voltage slope
8
V/ns
850
mJ
-55 to 175
°C
IDM
(2)
Ptot
(3)
dv/dt
EAS
(4)
Tstg
Tj
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
1. Value limited by wire bonding
2. Pulse width limited by safe operating area.
3. ISD ≤120A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
4. Starting Tj = 25 °C, ID = 60A, VDD = 30V
Table 2.
Thermal data
TO-220
Rthj-case Thermal resistance junction-case max
D2PAK
TO-247
0.5
Rthj-amb Thermal resistance junction-ambient max
62.5
50
°C/W
Rthj-pcb
see Figure 15 and Figure 16
°C/W
300
°C
TJ
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose(1)
--
°C/W
1. for 10 sec. 1.6mm from case
3/19
Electrical characteristics
2
STB150NF55 - STP150NF55 - STW150NF55
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS =0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max ratings
VDS = max ratings,
TC = 125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 60A
Table 4.
Symbol
Test conditions
Typ.
Max.
55
Unit
V
1
10
µA
µA
±100
nA
4
V
0.005
0.006
Ω
Typ.
Max.
Unit
2
Dynamic
Parameter
Test conditions
Min.
gfs (1)
Forward
transconductance
VDS = 15V, ID = 60A
160
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
4400
1050
350
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 27.5V, ID = 60A
RG = 4.7Ω VGS = 10V
(see Figure 19)
35
180
140
80
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 27.5V, ID = 120A,
VGS = 10V
(see Figure 20)
140
35
70
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/19
Min.
190
nC
nC
nC
STB150NF55 - STP150NF55 - STW150NF55
Table 5.
Symbol
Source drain diode
Parameter
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
Electrical characteristics
Test conditions
Min.
Typ.
ISD = 120A, VGS = 0
ISD = 120A,
Reverse recovery time
di/dt = 100A/µs,
Reverse recovery charge
VDD = 25V, Tj = 150°C
Reverse recovery current
(see Figure 21)
130
350
7.5
Max.
Unit
120
480
A
A
1.5
V
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/19
Electrical characteristics
STB150NF55 - STP150NF55 - STW150NF55
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/19
STB150NF55 - STP150NF55 - STW150NF55
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 12. Normalized BVDSS vs temperature
7/19
Electrical characteristics
STB150NF55 - STP150NF55 - STW150NF55
Figure 13. Power derating vs Tc
Figure 14. Max ID current vs Tc
Figure 15. Thermal resistance Rthj-a vs PCB
copper area
Figure 16. Max power dissipation vs PCB
copper area
8/19
STB150NF55 - STP150NF55 - STW150NF55
Electrical characteristics
Figure 17. Allowable lav vs time in avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single
pulse or repetitive, under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the allowable current in avalanche
PD(AVE) is the average power dissipation in avalanche (single pulse)
tAV is the time in avalanche
To derate above 25 °C, at fixed IAV , the following equation must be applied:
IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from normalized thermal response at fixed pulse width
equal to TAV .
9/19
Spice thermal model
3
STB150NF55 - STP150NF55 - STW150NF55
Spice thermal model
Table 6.
Parameters
Parameter
Node
Value
CTHERM1
5-4
0.011
CTHERM2
4-3
0.0012
CTHERM3
3-2
0.05
CTHERM4
2-1
0.1
RTHERM1
5-4
0.09
RTHERM2
4-3
0.02
RTHERM3
3-2
0.11
RTHERM4
2-1
0.17
Figure 18. Scheme
10/19
STB150NF55 - STP150NF55 - STW150NF55
4
Test circuit
Test circuit
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
Figure 22. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
11/19
Test circuit
Figure 25. Diode recovery times waveform
12/19
STB150NF55 - STP150NF55 - STW150NF55
STB150NF55 - STP150NF55 - STW150NF55
5
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
13/19
Package mechanical data
STB150NF55 - STP150NF55 - STW150NF55
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8
10
E1
0.368
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0º
0.015
4º
3
V2
0.4
1
14/19
STB150NF55 - STP150NF55 - STW150NF55
Package mechanical data
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
0.620
0.214
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
5.50
0.216
15/19
Package mechanical data
STB150NF55 - STP150NF55 - STW150NF55
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
16/19
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STB150NF55 - STP150NF55 - STW150NF55
6
Packaging mechanical data
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
17/19
Revision history
7
STB150NF55 - STP150NF55 - STW150NF55
Revision history
Table 7.
18/19
Revision history
Date
Revision
Changes
21-Jun-2004
2
Preliminary version
26-Jun-2006
3
New template, no content change
STB150NF55 - STP150NF55 - STW150NF55
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19/19