STMICROELECTRONICS STM32F103C8

STM32F103x8
STM32F103xB
Medium-density performance line ARM-based 32-bit MCU with 64 or
128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces
Features
■
Core: ARM 32-bit Cortex™-M3 CPU
– 72 MHz maximum frequency,
1.25 DMIPS/MHz (Dhrystone 2.1)
performance at 0 wait state memory
access
– Single-cycle multiplication and hardware
division
■
Memories
– 64 or 128 Kbytes of Flash memory
– 20 Kbytes of SRAM
■
Clock, reset and supply management
– 2.0 to 3.6 V application supply and I/Os
– POR, PDR, and programmable voltage
detector (PVD)
– 4-to-16 MHz crystal oscillator
– Internal 8 MHz factory-trimmed RC
– Internal 40 kHz RC
– PLL for CPU clock
– 32 kHz oscillator for RTC with calibration
■
Low power
– Sleep, Stop and Standby modes
– VBAT supply for RTC and backup registers
■
2 x 12-bit, 1 µs A/D converters (up to 16
channels)
– Conversion range: 0 to 3.6 V
– Dual-sample and hold capability
– Temperature sensor
■
■
DMA
– 7-channel DMA controller
– Peripherals supported: timers, ADC, SPIs,
I2Cs and USARTs
Up to 80 fast I/O ports
– 26/37/51/80 I/Os, all mappable on 16
external interrupt vectors and almost all
5 V-tolerant
September 2009
VFQFPN36
6 × 6 mm
LQFP100 14 × 14 m
LQFP64 10 × 10 m
LQFP48 7 × 7 m
BGA100 10 × 10 mm
BGA64 5 × 5 mm
■
Debug mode
– Serial wire debug (SWD) & JTAG interfaces
■
7 timers
– Three 16-bit timers, each with up to 4
IC/OC/PWM or pulse counter and
quadrature (incremental) encoder input
– 16-bit, motor control PWM timer with deadtime generation and emergency stop
– 2 watchdog timers (Independent and
Window)
– SysTick timer: a 24-bit downcounter
■
Up to 9 communication interfaces
– Up to 2 x I2C interfaces (SMBus/PMBus)
– Up to 3 USARTs (ISO 7816 interface, LIN,
IrDA capability, modem control)
– Up to 2 SPIs (18 Mbit/s)
– CAN interface (2.0B Active)
– USB 2.0 full-speed interface
■
CRC calculation unit, 96-bit unique ID
■
Packages are ECOPACK®
Table 1.
Device summary
Reference
Part number
STM32F103x8
STM32F103C8, STM32F103R8
STM32F103V8, STM32F103T8
STM32F103xB
STM32F103RB STM32F103VB,
STM32F103CB
Doc ID 13587 Rev 11
1/92
www.st.com
1
Contents
STM32F103x8, STM32F103xB
Contents
1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.1
Device overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.2
Full compatibility throughout the family . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.3
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.3.1
ARM® Cortex™-M3 core with embedded Flash and SRAM . . . . . . . . . 12
2.3.2
Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.3.3
CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . 12
2.3.4
Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.3.5
Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 12
2.3.6
External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . 13
2.3.7
Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.3.8
Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.3.9
Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.3.10
Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.3.11
Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.3.12
Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.3.13
DMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.3.14
RTC (real-time clock) and backup registers . . . . . . . . . . . . . . . . . . . . . . 15
2.3.15
Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.3.16
I²C bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.3.17
Universal synchronous/asynchronous receiver transmitter (USART) . . 17
2.3.18
Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.3.19
Controller area network (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.3.20
Universal serial bus (USB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.3.21
GPIOs (general-purpose inputs/outputs) . . . . . . . . . . . . . . . . . . . . . . . . 18
2.3.22
ADC (analog-to-digital converter) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.3.23
Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.3.24
Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 18
3
Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4
Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
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STM32F103x8, STM32F103xB
5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.1
6
7
Contents
Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.1.1
Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.1.2
Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.1.3
Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.1.4
Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.1.5
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.1.6
Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
5.1.7
Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5.2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5.3
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
5.3.1
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
5.3.2
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 36
5.3.3
Embedded reset and power control block characteristics . . . . . . . . . . . 36
5.3.4
Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5.3.5
Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5.3.6
External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
5.3.7
Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
5.3.8
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
5.3.9
Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
5.3.10
EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
5.3.11
Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . . 56
5.3.12
I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
5.3.13
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
5.3.14
TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
5.3.15
Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
5.3.16
CAN (controller area network) interface . . . . . . . . . . . . . . . . . . . . . . . . . 67
5.3.17
12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
5.3.18
Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
6.1
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
6.2
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
6.2.1
Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
6.2.2
Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . . . 83
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Doc ID 13587 Rev 11
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Contents
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Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
Table 32.
Table 33.
Table 34.
Table 35.
Table 36.
Table 37.
Table 38.
Table 39.
Table 40.
Table 41.
Table 42.
Table 43.
Table 44.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
STM32F103xx medium-density device features and peripheral counts . . . . . . . . . . . . . . . 10
STM32F103xx family . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Medium-density STM32F103xx pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 37
Embedded internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Maximum current consumption in Run mode, code with data processing
running from Flash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Maximum current consumption in Run mode, code with data processing
running from RAM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Maximum current consumption in Sleep mode, code running from Flash or RAM. . . . . . . 41
Typical and maximum current consumptions in Stop and Standby modes . . . . . . . . . . . . 42
Typical current consumption in Run mode, code with data processing
running from Flash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Typical current consumption in Sleep mode, code running from Flash or
RAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
HSE 4-16 MHz oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
HSI oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
I2C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
SCL frequency (fPCLK1= 36 MHz.,VDD = 3.3 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
USB startup time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
USB DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
USB: Full-speed electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Doc ID 13587 Rev 11
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List of tables
Table 45.
Table 46.
Table 47.
Table 48.
Table 49.
Table 50.
Table 51.
Table 52.
Table 53.
Table 54.
Table 55.
Table 56.
Table 57.
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STM32F103x8, STM32F103xB
ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
RAIN max for fADC = 14 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
ADC accuracy - limited test conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
VFQFPN36 6 x 6 mm, 0.5 mm pitch, package mechanical data . . . . . . . . . . . . . . . . . . . . 74
LFBGA100 - 10 x 10 mm low profile fine pitch ball grid array package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
LQPF100, 14 x 14 mm 100-pin low-profile quad flat package mechanical data. . . . . . . . . 77
LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package mechanical data . . . . . . . . . . 78
TFBGA64 - 8 x 8 active ball array, 5 x 5 mm, 0.5 mm pitch, package mechanical data. . . 79
LQFP48, 7 x 7 mm, 48-pin low-profile quad flat package mechanical data . . . . . . . . . . . . 81
Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Figure 41.
STM32F103xx performance line block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
STM32F103xx performance line LFBGA100 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
STM32F103xx performance line LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
STM32F103xx performance line LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
STM32F103xx performance line TFBGA64 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
STM32F103xx performance line LQFP48 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
STM32F103xx Performance Line VFQFPN36 pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Typical current consumption in Run mode versus frequency (at 3.6 V) code with data processing running from RAM, peripherals enabled. . . . . . . . . . . . . . . . . . 40
Typical current consumption in Run mode versus frequency (at 3.6 V) code with data processing running from RAM, peripherals disabled . . . . . . . . . . . . . . . . . 40
Typical current consumption on VBAT with RTC on versus temperature at different
VBAT values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Typical current consumption in Stop mode with regulator in Run mode versus
temperature at VDD = 3.3 V and 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Typical current consumption in Stop mode with regulator in Low-power mode versus
temperature at VDD = 3.3 V and 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Typical current consumption in Standby mode versus temperature at
VDD = 3.3 V and 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
I2C bus AC waveforms and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
SPI timing diagram - slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
SPI timing diagram - master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
USB timings: definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . . 71
Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . . 72
VFQFPN36 6 x 6 mm, 0.5 mm pitch, package outline(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Recommended footprint (dimensions in mm)(1)(2)(3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
LFBGA100 - 10 x 10 mm low profile fine pitch ball grid array package
outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Recommended PCB design rules (0.80/0.75 mm pitch BGA) . . . . . . . . . . . . . . . . . . . . . . 76
LQFP100, 14 x 14 mm 100-pin low-profile quad flat package outline . . . . . . . . . . . . . . . . 77
Recommended footprint(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package outline . . . . . . . . . . . . . . . . . . 78
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List of figures
Figure 42.
Figure 43.
Figure 44.
Figure 45.
Figure 46.
Figure 47.
8/92
STM32F103x8, STM32F103xB
Recommended footprint(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
TFBGA64 - 8 x 8 active ball array, 5 x 5 mm, 0.5 mm pitch, package outline . . . . . . . . . . 79
Recommended PCB design rules for pads (0.5 mm pitch BGA) . . . . . . . . . . . . . . . . . . . . 80
LQFP48, 7 x 7 mm, 48-pin low-profile quad flat package outline . . . . . . . . . . . . . . . . . . . . 81
Recommended footprint(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
LQFP100 PD max vs. TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
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STM32F103x8, STM32F103xB
1
Introduction
Introduction
This datasheet provides the ordering information and mechanical device characteristics of
the STM32F103x8 and STM32F103xB medium-density performance line microcontrollers.
For more details on the whole STMicroelectronics STM32F103xx family, please refer to
Section 2.2: Full compatibility throughout the family.
The medium-density STM32F103xx datasheet should be read in conjunction with the low-,
medium- and high-density STM32F10xxx reference manual.
The reference and Flash programming manuals are both available from the
STMicroelectronics website www.st.com.
For information on the Cortex™-M3 core please refer to the Cortex™-M3 Technical
Reference Manual, available from the www.arm.com website at the following address:
http://infocenter.arm.com/help/index.jsp?topic=/com.arm.doc.ddi0337e/.
2
Description
The STM32F103x8 and STM32F103xB performance line family incorporates the highperformance ARM Cortex™-M3 32-bit RISC core operating at a 72 MHz frequency, highspeed embedded memories (Flash memory up to 128 Kbytes and SRAM up to 20 Kbytes),
and an extensive range of enhanced I/Os and peripherals connected to two APB buses. All
devices offer two 12-bit ADCs, three general purpose 16-bit timers plus one PWM timer, as
well as standard and advanced communication interfaces: up to two I2Cs and SPIs, three
USARTs, an USB and a CAN.
The STM32F103xx medium-density performance line family operates from a 2.0 to 3.6 V
power supply. It is available in both the –40 to +85 °C temperature range and the –40 to
+105 °C extended temperature range. A comprehensive set of power-saving mode allows
the design of low-power applications.
The STM32F103xx medium-density performance line family includes devices in six different
package types: from 36 pins to 100 pins. Depending on the device chosen, different sets of
peripherals are included, the description below gives an overview of the complete range of
peripherals proposed in this family.
These features make the STM32F103xx medium-density performance line microcontroller
family suitable for a wide range of applications:
●
Motor drive and application control
●
Medical and handheld equipment
●
PC peripherals gaming and GPS platforms
●
Industrial applications: PLC, inverters, printers, and scanners
●
Alarm systems, Video intercom, and HVAC
Figure 1 shows the general block diagram of the device family.
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Description
2.1
STM32F103x8, STM32F103xB
Device overview
Table 2.
STM32F103xx medium-density device features and peripheral counts
Peripheral
STM32F103Tx
STM32F103Cx
64
128
SRAM - Kbytes
20
20
20
20
20
General-purpose
3
3
3
3
3
Advanced-control
1
1
1
SPI
1
2
2
2
2
I2C
1
2
2
2
2
USART
2
3
3
3
3
USB
1
1
1
1
1
CAN
1
1
1
1
1
Communication
Timers
64
12-bit synchronized ADC
Number of channels
1
64
128
37
51
80
2
10 channels
2
10 channels
2
16 channels
2
16 channels
72 MHz
Operating voltage
Packages
128
26
CPU frequency
Operating temperatures
64
STM32F103Vx
Flash - Kbytes
GPIOs
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STM32F103Rx
2.0 to 3.6 V
Ambient temperatures: –40 to +85 °C /–40 to +105 °C (see Table 9)
Junction temperature: –40 to + 125 °C (see Table 9)
VFQFPN36
LQFP48
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LQFP64,
TFBGA64
LQFP100,
LFBGA100
STM32F103x8, STM32F103xB
2.2
Description
Full compatibility throughout the family
The STM32F103xx is a complete family whose members are fully pin-to-pin, software and
feature compatible. In the reference manual, the STM32F103x4 and STM32F103x6 are
identified as low-density devices, the STM32F103x8 and STM32F103xB are referred to as
medium-density devices, and the STM32F103xC, STM32F103xD and STM32F103xE are
referred to as high-density devices.
Low- and high-density devices are an extension of the STM32F103x8/B devices, they are
specified in the STM32F103x4/6 and STM32F103xC/D/E datasheets, respectively. Lowdensity devices feature lower Flash memory and RAM capacities, less timers and
peripherals. High-density devices have higher Flash memory and RAM capacities, and
additional peripherals like SDIO, FSMC, I2S and DAC, while remaining fully compatible with
the other members of the STM32F103xx family.
The STM32F103x4, STM32F103x6, STM32F103xC, STM32F103xD and STM32F103xE
are a drop-in replacement for STM32F103x8/B medium-density devices, allowing the user
to try different memory densities and providing a greater degree of freedom during the
development cycle.
Moreover, the STM32F103xx performance line family is fully compatible with all existing
STM32F101xx access line and STM32F102xx USB access line devices.
Table 3.
STM32F103xx family
Low-density devices
Pinout
16 KB
Flash
32 KB
Flash(1)
Medium-density devices
64 KB
Flash
128 KB
Flash
High-density devices
256 KB
Flash
384 KB
Flash
512 KB
Flash
6 KB RAM 10 KB RAM 20 KB RAM 20 KB RAM 48 KB RAM 64 KB RAM 64 KB RAM
144
100
64
48
36
2 × USARTs
2 × 16-bit timers
1 × SPI, 1 × I2C, USB,
CAN, 1 × PWM timer
2 × ADCs
3 × USARTs
3 × 16-bit timers
2 × SPIs, 2 × I2Cs, USB,
CAN, 1 × PWM timer
2 × ADCs
5 × USARTs
4 × 16-bit timers, 2 × basic timers
3 × SPIs, 2 × I2Ss, 2 × I2Cs
USB, CAN, 2 × PWM timers
3 × ADCs, 2 × DACs, 1 × SDIO
FSMC (100 and 144 pins)
1. For orderable part numbers that do not show the A internal code after the temperature range code (6 or 7),
the reference datasheet for electrical characteristics is that of the STM32F103x8/B medium-density
devices.
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STM32F103x8, STM32F103xB
2.3
Overview
2.3.1
ARM® Cortex™-M3 core with embedded Flash and SRAM
The ARM Cortex™-M3 processor is the latest generation of ARM processors for embedded
systems. It has been developed to provide a low-cost platform that meets the needs of MCU
implementation, with a reduced pin count and low-power consumption, while delivering
outstanding computational performance and an advanced system response to interrupts.
The ARM Cortex™-M3 32-bit RISC processor features exceptional code-efficiency,
delivering the high-performance expected from an ARM core in the memory size usually
associated with 8- and 16-bit devices.
The STM32F103xx performance line family having an embedded ARM core, is therefore
compatible with all ARM tools and software.
Figure 1 shows the general block diagram of the device family.
2.3.2
Embedded Flash memory
64 or 128 Kbytes of embedded Flash is available for storing programs and data.
2.3.3
CRC (cyclic redundancy check) calculation unit
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit
data word and a fixed generator polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at linktime and stored at a given memory location.
2.3.4
Embedded SRAM
Twenty Kbytes of embedded SRAM accessed (read/write) at CPU clock speed with 0 wait
states.
2.3.5
Nested vectored interrupt controller (NVIC)
The STM32F103xx performance line embeds a nested vectored interrupt controller able to
handle up to 43 maskable interrupt channels (not including the 16 interrupt lines of
Cortex™-M3) and 16 priority levels.
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●
Closely coupled NVIC gives low-latency interrupt processing
●
Interrupt entry vector table address passed directly to the core
●
Closely coupled NVIC core interface
●
Allows early processing of interrupts
●
Processing of late arriving higher priority interrupts
●
Support for tail-chaining
●
Processor state automatically saved
●
Interrupt entry restored on interrupt exit with no instruction overhead
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STM32F103x8, STM32F103xB
Description
This hardware block provides flexible interrupt management features with minimal interrupt
latency.
2.3.6
External interrupt/event controller (EXTI)
The external interrupt/event controller consists of 19 edge detector lines used to generate
interrupt/event requests. Each line can be independently configured to select the trigger
event (rising edge, falling edge, both) and can be masked independently. A pending register
maintains the status of the interrupt requests. The EXTI can detect an external line with a
pulse width shorter than the Internal APB2 clock period. Up to 80 GPIOs can be connected
to the 16 external interrupt lines.
2.3.7
Clocks and startup
System clock selection is performed on startup, however the internal RC 8 MHz oscillator is
selected as default CPU clock on reset. An external 4-16 MHz clock can be selected, in
which case it is monitored for failure. If failure is detected, the system automatically switches
back to the internal RC oscillator. A software interrupt is generated if enabled. Similarly, full
interrupt management of the PLL clock entry is available when necessary (for example on
failure of an indirectly used external crystal, resonator or oscillator).
Several prescalers allow the configuration of the AHB frequency, the high-speed APB
(APB2) and the low-speed APB (APB1) domains. The maximum frequency of the AHB and
the high-speed APB domains is 72 MHz. The maximum allowed frequency of the low-speed
APB domain is 36 MHz. See Figure 2 for details on the clock tree.
2.3.8
Boot modes
At startup, boot pins are used to select one of three boot options:
●
Boot from User Flash
●
Boot from System Memory
●
Boot from embedded SRAM
The boot loader is located in System Memory. It is used to reprogram the Flash memory by
using USART1. For further details please refer to AN2606.
2.3.9
Power supply schemes
●
VDD = 2.0 to 3.6 V: external power supply for I/Os and the internal regulator.
Provided externally through VDD pins.
●
VSSA, VDDA = 2.0 to 3.6 V: external analog power supplies for ADC, reset blocks, RCs
and PLL (minimum voltage to be applied to VDDA is 2.4 V when the ADC is used).
VDDA and VSSA must be connected to VDD and VSS, respectively.
●
VBAT = 1.8 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and backup
registers (through power switch) when VDD is not present.
For more details on how to connect power pins, refer to Figure 12: Power supply scheme.
2.3.10
Power supply supervisor
The device has an integrated power-on reset (POR)/power-down reset (PDR) circuitry. It is
always active, and ensures proper operation starting from/down to 2 V. The device remains
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Description
STM32F103x8, STM32F103xB
in reset mode when VDD is below a specified threshold, VPOR/PDR, without the need for an
external reset circuit.
The device features an embedded programmable voltage detector (PVD) that monitors the
VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be
generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is higher
than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
Refer to Table 11: Embedded reset and power control block characteristics for the values of
VPOR/PDR and VPVD.
2.3.11
Voltage regulator
The regulator has three operation modes: main (MR), low power (LPR) and power down.
●
MR is used in the nominal regulation mode (Run)
●
LPR is used in the Stop mode
●
Power down is used in Standby mode: the regulator output is in high impedance: the
kernel circuitry is powered down, inducing zero consumption (but the contents of the
registers and SRAM are lost)
This regulator is always enabled after reset. It is disabled in Standby mode, providing high
impedance output.
2.3.12
Low-power modes
The STM32F103xx performance line supports three low-power modes to achieve the best
compromise between low power consumption, short startup time and available wakeup
sources:
●
Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
●
Stop mode
The Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the 1.8 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low power mode.
The device can be woken up from Stop mode by any of the EXTI line. The EXTI line
source can be one of the 16 external lines, the PVD output, the RTC alarm or the USB
wakeup.
●
Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.8 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, SRAM and register contents are lost except for registers in the Backup
domain and Standby circuitry.
The device exits Standby mode when an external reset (NRST pin), an IWDG reset, a
rising edge on the WKUP pin, or an RTC alarm occurs.
Note:
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The RTC, the IWDG, and the corresponding clock sources are not stopped by entering Stop
or Standby mode.
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STM32F103x8, STM32F103xB
2.3.13
Description
DMA
The flexible 7-channel general-purpose DMA is able to manage memory-to-memory,
peripheral-to-memory and memory-to-peripheral transfers. The DMA controller supports
circular buffer management avoiding the generation of interrupts when the controller
reaches the end of the buffer.
Each channel is connected to dedicated hardware DMA requests, with support for software
trigger on each channel. Configuration is made by software and transfer sizes between
source and destination are independent.
The DMA can be used with the main peripherals: SPI, I2C, USART, general-purpose and
advanced-control timers TIMx and ADC.
2.3.14
RTC (real-time clock) and backup registers
The RTC and the backup registers are supplied through a switch that takes power either on
VDD supply when present or through the VBAT pin. The backup registers are ten 16-bit
registers used to store 20 bytes of user application data when VDD power is not present.
The real-time clock provides a set of continuously running counters which can be used with
suitable software to provide a clock calendar function, and provides an alarm interrupt and a
periodic interrupt. It is clocked by a 32.768 kHz external crystal, resonator or oscillator, the
internal low-power RC oscillator or the high-speed external clock divided by 128. The
internal low-power RC has a typical frequency of 40 kHz. The RTC can be calibrated using
an external 512 Hz output to compensate for any natural crystal deviation. The RTC features
a 32-bit programmable counter for long-term measurement using the Compare register to
generate an alarm. A 20-bit prescaler is used for the time base clock and is by default
configured to generate a time base of 1 second from a clock at 32.768 kHz.
2.3.15
Timers and watchdogs
The medium-density STM32F103xx performance line devices include an advanced-control
timer, three general-purpose timers, two watchdog timers and a SysTick timer.
Table 4 compares the features of the advanced-control and general-purpose timers.
Table 4.
Timer feature comparison
Timer
Counter
resolution
Counter
type
Prescaler
factor
DMA request Capture/compare Complementary
generation
channels
outputs
TIM1
16-bit
Up,
down,
up/down
Any integer
between 1
and 65536
Yes
4
Yes
TIM2,
TIM3,
TIM4
16-bit
Up,
down,
up/down
Any integer
between 1
and 65536
Yes
4
No
Advanced-control timer (TIM1)
The advanced-control timer (TIM1) can be seen as a three-phase PWM multiplexed on 6
channels. It has complementary PWM outputs with programmable inserted dead-times. It
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can also be seen as a complete general-purpose timer. The 4 independent channels can be
used for
●
Input capture
●
Output compare
●
PWM generation (edge- or center-aligned modes)
●
One-pulse mode output
If configured as a general-purpose 16-bit timer, it has the same features as the TIMx timer. If
configured as the 16-bit PWM generator, it has full modulation capability (0-100%).
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled to turn off any power switch driven by these outputs.
Many features are shared with those of the general-purpose TIM timers which have the
same architecture. The advanced-control timer can therefore work together with the TIM
timers via the Timer Link feature for synchronization or event chaining.
General-purpose timers (TIMx)
There are up to three synchronizable general-purpose timers embedded in the
STM32F103xx performance line devices. These timers are based on a 16-bit auto-reload
up/down counter, a 16-bit prescaler and feature 4 independent channels each for input
capture/output compare, PWM or one-pulse mode output. This gives up to 12 input
captures/output compares/PWMs on the largest packages.
The general-purpose timers can work together with the advanced-control timer via the Timer
Link feature for synchronization or event chaining. Their counter can be frozen in debug
mode. Any of the general-purpose timers can be used to generate PWM outputs. They all
have independent DMA request generation.
These timers are capable of handling quadrature (incremental) encoder signals and the
digital outputs from 1 to 3 hall-effect sensors.
Independent watchdog
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 40 kHz internal RC and as it operates independently of the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes. The counter
can be frozen in debug mode.
Window watchdog
The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from the
main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.
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STM32F103x8, STM32F103xB
Description
SysTick timer
This timer is dedicated for OS, but could also be used as a standard downcounter. It
features:
2.3.16
●
A 24-bit downcounter
●
Autoreload capability
●
Maskable system interrupt generation when the counter reaches 0
●
Programmable clock source
I²C bus
Up to two I²C bus interfaces can operate in multimaster and slave modes. They can support
standard and fast modes.
They support dual slave addressing (7-bit only) and both 7/10-bit addressing in master
mode. A hardware CRC generation/verification is embedded.
They can be served by DMA and they support SM Bus 2.0/PM Bus.
2.3.17
Universal synchronous/asynchronous receiver transmitter (USART)
One of the USART interfaces is able to communicate at speeds of up to 4.5 Mbit/s. The
other available interfaces communicate at up to 2.25 Mbit/s. They provide hardware
management of the CTS and RTS signals, IrDA SIR ENDEC support, are ISO 7816
compliant and have LIN Master/Slave capability.
All USART interfaces can be served by the DMA controller.
2.3.18
Serial peripheral interface (SPI)
Up to two SPIs are able to communicate up to 18 Mbits/s in slave and master modes in fullduplex and simplex communication modes. The 3-bit prescaler gives 8 master mode
frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC
generation/verification supports basic SD Card/MMC modes.
Both SPIs can be served by the DMA controller.
2.3.19
Controller area network (CAN)
The CAN is compliant with specifications 2.0A and B (active) with a bit rate up to 1 Mbit/s. It
can receive and transmit standard frames with 11-bit identifiers as well as extended frames
with 29-bit identifiers. It has three transmit mailboxes, two receive FIFOs with 3 stages and
14 scalable filter banks.
2.3.20
Universal serial bus (USB)
The STM32F103xx performance line embeds a USB device peripheral compatible with the
USB full-speed 12 Mbs. The USB interface implements a full-speed (12 Mbit/s) function
interface. It has software-configurable endpoint setting and suspend/resume support. The
dedicated 48 MHz clock is generated from the internal main PLL (the clock source must use
a HSE crystal oscillator).
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Description
2.3.21
STM32F103x8, STM32F103xB
GPIOs (general-purpose inputs/outputs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. All GPIOs are high-currentcapable except for analog inputs.
The I/Os alternate function configuration can be locked if needed following a specific
sequence in order to avoid spurious writing to the I/Os registers.
I/Os on APB2 with up to 18 MHz toggling speed
2.3.22
ADC (analog-to-digital converter)
Two 12-bit analog-to-digital converters are embedded into STM32F103xx performance line
devices and each ADC shares up to 16 external channels, performing conversions in singleshot or scan modes. In scan mode, automatic conversion is performed on a selected group
of analog inputs.
Additional logic functions embedded in the ADC interface allow:
●
Simultaneous sample and hold
●
Interleaved sample and hold
●
Single shunt
The ADC can be served by the DMA controller.
An analog watchdog feature allows very precise monitoring of the converted voltage of one,
some or all selected channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
The events generated by the general-purpose timers (TIMx) and the advanced-control timer
(TIM1) can be internally connected to the ADC start trigger, injection trigger, and DMA
trigger respectively, to allow the application to synchronize A/D conversion and timers.
2.3.23
Temperature sensor
The temperature sensor has to generate a voltage that varies linearly with temperature. The
conversion range is between 2 V < VDDA < 3.6 V. The temperature sensor is internally
connected to the ADC12_IN16 input channel which is used to convert the sensor output
voltage into a digital value.
2.3.24
Serial wire JTAG debug port (SWJ-DP)
The ARM SWJ-DP Interface is embedded. and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
The JTAG TMS and TCK pins are shared with SWDIO and SWCLK, respectively, and a
specific sequence on the TMS pin is used to switch between JTAG-DP and SW-DP.
18/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
STM32F103xx performance line block diagram
TPIU
SW/JTAG
Ibus
Cortex-M3 CPU
Fmax : 7 2M Hz
Trace
Controlle r
pbu s
Trace/trig
Dbus
Syst em
NVIC
AHB:F max =48/72 MHz
@VDDA
SUPPLY
SUPERVISION
NRST
VDDA
VSSA
Rst
PVD
Int
PCLK1
PCLK2
HCLK
FCLK
AHB2
APB2
@VDD
PLL &
CLOCK
MANAGT
XTAL OSC
4-16 MHz
GPIOA
GPIOB
PC[15:0]
GPIOC
PD[15:0]
GPIOD
PE[15:0]
GPIOE
4 Chann els
3 co mpl. Chann els
ETR and BKIN
TIM1
MOSI,MISO,
SCK,NSS as AF
SPI1
IWDG
Stand by
in terface
@VDDA
AHB2
APB 1
RTC
AWU
Back up
reg
12bi t ADC2 IF
TAMPER-RTC
TIM2
4 Chann els
TIM3
4 Chann els
TIM 4
4 Chann els
USART2
RX,TX, CTS, RTS,
CK, SmartCard as AF
USART3
RX,TX, CTS, RTS,
CK, SmartCard as AF
2x(8x16bit)SPI2
MOSI,MISO,SCK,NSS
as AF
I2C1
SCL,SDA,SMBA
as AF
I2C2
SCL,SDA
as AF
bx CAN
USB 2.0 FS
VREF-
OSC32_IN
OSC32_OUT
Backu p i nterf ace
USART1
12bit ADC1 IF
VBAT
@VBAT
@VDDA
16AF
VREF+
OSC_IN
OSC_OUT
RC 8 MHz
RC 40 kHz
EXTI
WAKEUP
PA[ 15:0]
VDD = 2 to 3.6V
VSS
@VDD
64 bit
XTAL 32 kHz
PB[ 15:0]
RX,TX, CTS, RTS,
Smart Card as AF
Flash 128 KB
APB2 : F max =48 / 72 MHz
80AF
POR / PDR
VOLT. REG.
3.3V TO 1.8V
SRAM
20 KB
GP DMA
7 ch annels
POWER
APB1 : Fmax =24 / 36 MHz
NJTRST
TRST
JTDI
JTCK/SWCLK
JTMS/SWDIO
JTDO
as AF
flash obl
Inte rfac e
TRACECLK
TRACED[0:3]
as AS
BusM atrix
Figure 1.
Description
USBDP/CAN_TX
USBDM/CAN_RX
SRAM 512B
WWDG
Temp sensor
ai14390d
1. TA = –40 °C to +105 °C (junction temperature up to 125 °C).
2. AF = alternate function on I/O port pin.
Doc ID 13587 Rev 11
19/92
Description
STM32F103x8, STM32F103xB
Figure 2.
Clock tree
8 MHz
HSI RC
HSI
USB
Prescaler
/1, 1.5
/2
USBCLK
to USB interface
48 MHz
72 MHz max
PLLSRC
/8
SW
PLLMUL
HSI
..., x16
x2, x3, x4
PLL
SYSCLK
AHB
Prescaler
72 MHz
/1, 2..512
max
PLLCLK
Clock
Enable (3 bits)
APB1
Prescaler
/1, 2, 4, 8, 16
HCLK
to AHB bus, core,
memory and DMA
to Cortex System timer
FCLK Cortex
free running clock
36 MHz max
PCLK1
to APB1
peripherals
Peripheral Clock
HSE
Enable (13 bits)
to TIM2, 3
TIM2,3, 4
and 4
If (APB1 prescaler =1) x1
TIMXCLK
else
x2 Peripheral Clock
CSS
Enable (3 bits)
APB2
Prescaler
/1, 2, 4, 8, 16
PLLXTPRE
OSC_OUT
OSC_IN
4-16 MHz
72 MHz max
HSE OSC
/2
TIM1 timer
to TIM1
If (APB2 prescaler =1) x1
TIM1CLK
else
x2 Peripheral Clock
/128
OSC32_IN
OSC32_OUT
LSE OSC
32.768 kHz
Peripheral Clock
Enable (11 bits)
PCLK2
to APB2
peripherals
to RTC
LSE
RTCCLK
ADC
Prescaler
/2, 4, 6, 8
Enable (1 bit)
to ADC
ADCCLK
RTCSEL[1:0]
LSI RC
40 kHz
to Independent Watchdog (IWDG)
LSI
IWDGCLK
Main
Clock Output
/2
MCO
PLLCLK
HSI
Legend:
HSE = high-speed external clock signal
HSI = high-speed internal clock signal
LSI = low-speed internal clock signal
LSE = low-speed external clock signal
HSE
SYSCLK
MCO
ai14903
1. When the HSI is used as a PLL clock input, the maximum system clock frequency that can be achieved is
64 MHz.
2. For the USB function to be available, both HSE and PLL must be enabled, with the CPU running at either
48 MHz or 72 MHz.
3. To have an ADC conversion time of 1 µs, APB2 must be at 14 MHz, 28 MHz or 56 MHz.
20/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Pinouts and pin description
3
Pinouts and pin description
Figure 3.
STM32F103xx performance line LFBGA100 ballout
1
A
2
PC14PC13OSC32_IN TAMPER-RTC
3
4
5
6
7
8
9
10
PE2
PB9
PB7
PB4
PB3
PA15
PA14
PA13
B
PC15OSC32_OUT
VBAT
PE3
PB8
PB6
PD5
PD2
PC11
PC10
PA12
C
OSC_IN
VSS_5
PE4
PE1
PB5
PD6
PD3
PC12
PA9
PA11
D
OSC_OUT
VDD_5
PE5
PE0
BOOT0
PD7
PD4
PD0
PA8
PA10
E
NRST
PC2
PE6
VSS_4
VSS_3
VSS_2
VSS_1
PD1
PC9
PC7
F
PC0
PC1
PC3
VDD_4
VDD_3
VDD_2
VDD_1
NC
PC8
PC6
G
VSSA
PA0-WKUP
PA4
PC4
PB2
PE10
PE14
PB15
PD11
PD15
H
VREF–
PA1
PA5
PC5
PE7
PE11
PE15
PB14
PD10
PD14
J
VREF+
PA2
PA6
PB0
PE8
PE12
PB10
PB13
PD9
PD13
K
VDDA
PA3
PA7
PB1
PE9
PE13
PB11
PB12
PD8
PD12
AI16001c
Doc ID 13587 Rev 11
21/92
Pinouts and pin description
STM32F103xx performance line LQFP100 pinout
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
VDD_3
VSS_3
PE1
PE0
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PC12
PC11
PC10
PA15
PA14
Figure 4.
STM32F103x8, STM32F103xB
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
LQFP100
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
VDD_2
VSS_2
NC
PA 13
PA 12
PA 11
PA 10
PA 9
PA 8
PC9
PC8
PC7
PC6
PD15
PD14
PD13
PD12
PD11
PD10
PD9
PD8
PB15
PB14
PB13
PB12
PA3
VSS_4
VDD_4
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PE7
PE8
PE9
PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
VSS_1
VDD_1
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
PE2
PE3
PE4
PE5
PE6
VBAT
PC13-TAMPER-RTC
PC14-OSC32_IN
PC15-OSC32_OUT
VSS_5
VDD_5
OSC_IN
OSC_OUT
NRST
PC0
PC1
PC2
PC3
VSSA
VREFVREF+
VDDA
PA0-WKUP
PA1
PA2
ai14391
22/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
VDD_3
VSS_3
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PD2
PC12
PC11
PC10
PA15
PA14
STM32F103xx performance line LQFP64 pinout
VBAT
PC13-TAMPER-RTC
PC14-OSC32_IN
PC15-OSC32_OUT
PD0 OSC_IN
PD1 OSC_OUT
NRST
PC0
PC1
PC2
PC3
VSSA
VDDA
PA0-WKUP
PA1
PA2
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
48
1
47
2
46
3
45
4
44
5
43
6
42
7
41
8
LQFP64
40
9
39
10
38
11
37
12
36
13
35
14
34
15
33
16
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
VDD_2
VSS_2
PA13
PA12
PA11
PA10
PA9
PA8
PC9
PC8
PC7
PC6
PB15
PB14
PB13
PB12
PA3
VSS_4
VDD_4
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PB10
PB11
VSS_1
VDD_1
Figure 5.
Pinouts and pin description
ai14392
Doc ID 13587 Rev 11
23/92
Pinouts and pin description
Figure 6.
STM32F103x8, STM32F103xB
STM32F103xx performance line TFBGA64 ballout
1
A
2
PC14PC13OSC32_IN TAMPER-RTC
3
4
5
6
7
8
PB9
PB4
PB3
PA15
PA14
PA13
B
PC15OSC32_OUT
VBAT
PB8
BOOT0
PD2
PC11
PC10
PA12
C
OSC_IN
VSS_4
PB7
PB5
PC12
PA10
PA9
PA11
D
OSC_OUT
VDD_4
PB6
VSS_3
VSS_2
VSS_1
PA8
PC9
E
NRST
PC1
PC0
VDD_3
VDD_2
VDD_1
PC7
PC8
F
VSSA
PC2
PA2
PA5
PB0
PC6
PB15
PB14
G
VREF+
PA0-WKUP
PA3
PA6
PB1
PB2
PB10
PB13
H
VDDA
PA1
PA4
PA7
PC4
PC5
PB11
PB12
AI15494
24/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
STM32F103xx performance line LQFP48 pinout
VDD_3
VSS_3
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PA15
PA14
Figure 7.
Pinouts and pin description
48 47 46 45 44 43 42 41 40 39 38 37
36
1
2
35
3
34
33
4
32
5
31
6
LQFP48
30
7
29
8
28
9
27
10
26
11
25
12
13 14 15 16 17 18 19 20 21 22 23 24
VDD_2
VSS_2
PA13
PA12
PA11
PA10
PA9
PA8
PB15
PB14
PB13
PB12
PA3
PA4
PA5
PA6
PA7
PB0
PB1
PB2
PB10
PB11
VSS_1
VDD_1
VBAT
PC13-TAMPER-RTC
PC14-OSC32_IN
PC15-OSC32_OUT
PD0-OSC_IN
PD1-OSC_OUT
NRST
VSSA
VDDA
PA0-WKUP
PA1
PA2
ai14393b
PB7
PB6
PB5
PB4
PB3
PA15
PA14
36
BOOT0
VSS_3
STM32F103xx Performance Line VFQFPN36 pinout
35
34
33
32
31
30
29
28
VDD_3
1
27
VDD_2
OSC_IN/PD0
2
26
VSS_2
OSC_OUT/PD1
3
25
PA13
NRST
4
24
PA12
23
PA11
VSSA
5
VDDA
6
22
PA10
PA0-WKUP
7
21
PA9
PA1
8
20
PA8
PA2
9
10
11
12
13
14
15
PA4
PA5
PA6
PA7
PB0
QFN36
PA3
19
18
VDD_1
VSS_1
17
PB2
16
PB1
Figure 8.
ai14654
Doc ID 13587 Rev 11
25/92
Pinouts and pin description
Medium-density STM32F103xx pin definitions
Alternate functions(4)
LQFP100
VFQFPN36
A3
-
-
1
-
PE2
I/O FT
PE2
TRACECK
B3
-
-
2
-
PE3
I/O FT
PE3
TRACED0
C3
-
-
3
-
PE4
I/O FT
PE4
TRACED1
D3
-
-
4
-
PE5
I/O FT
PE5
TRACED2
E3
-
-
5
-
PE6
I/O FT
PE6
TRACED3
B2
1
B2
1
6
-
VBAT
S
VBAT
A2
2
A2
2
7
-
PC13-TAMPERRTC(5)
I/O
PC13(6)
TAMPER-RTC
A1
3
A1
3
8
-
PC14-OSC32_IN(5) I/O
PC14(6)
OSC32_IN
B1
4
B1
4
9
-
PC15OSC32_OUT(5)
I/O
PC15(6)
OSC32_OUT
C2
-
-
-
10
-
VSS_5
S
VSS_5
D2
-
-
-
11
-
VDD_5
S
VDD_5
C1
5
C1
5
12
2
OSC_IN
I
OSC_IN
D1
6
D1
6
13
3
OSC_OUT
O
OSC_OUT
E1
7
E1
7
14
4
NRST
I/O
NRST
F1
-
E3
8
15
-
PC0
I/O
PC0
ADC12_IN10
F2
-
E2
9
16
-
PC1
I/O
PC1
ADC12_IN11
E2
-
F2
10
17
-
PC2
I/O
PC2
ADC12_IN12
F3
-
-(7)
11
18
-
PC3
I/O
PC3
ADC12_IN13
G1
8
F1
12
19
5
VSSA
S
VSSA
H1
-
-
-
20
-
VREF-
S
VREF-
-
21
-
VREF+
S
VREF+
13
22
6
VDDA
S
VDDA
J1
-
K1
9
G2
10
TFBGA64
LQFP64
Default
LQFP48
Main
function(3)
(after reset)
LFBGA100
Type(1)
Pins
I / O Level(2)
Table 5.
STM32F103x8, STM32F103xB
(7)
G1
H1
G2
14
23
7
Pin name
PA0-WKUP
I/O
PA0
WKUP/
USART2_CTS(8)/
ADC12_IN0/
TIM2_CH1_ETR(8)
H2
11
H2
15
24
8
PA1
I/O
PA1
USART2_RTS(8)/
ADC12_IN1/
TIM2_CH2(8)
J2
12
F3
16
25
9
PA2
I/O
PA2
USART2_TX(8)/
ADC12_IN2/
TIM2_CH3(8)
26/92
Doc ID 13587 Rev 11
Remap
STM32F103x8, STM32F103xB
Medium-density STM32F103xx pin definitions (continued)
Alternate functions(4)
LQFP48
TFBGA64
LQFP64
LQFP100
VFQFPN36
Main
function(3)
(after reset)
LFBGA100
Type(1)
Pins
I / O Level(2)
Table 5.
Pinouts and pin description
K2
13
G3
17
26
10
PA3
I/O
PA3
E4
-
C2
18
27
-
VSS_4
S
VSS_4
F4
-
D2
19
28
-
VDD_4
S
VDD_4
G3
14
H3
20
29
11
PA4
I/O
PA4
SPI1_NSS(8)/
USART2_CK(8)/
ADC12_IN4
H3
15
F4
21
30
12
PA5
I/O
PA5
SPI1_SCK(8)/
ADC12_IN5
J3
16
G4
22
31
13
PA6
I/O
PA6
SPI1_MISO(8)/
ADC12_IN6/
TIM3_CH1(8)
TIM1_BKIN
TIM1_CH1N
Pin name
Default
Remap
USART2_RX(8)/
ADC12_IN3/
TIM2_CH4(8)
PA7
I/O
PA7
SPI1_MOSI(8)/
ADC12_IN7/
TIM3_CH2(8)
33
PC4
I/O
PC4
ADC12_IN14
25
34
PC5
I/O
PC5
ADC12_IN15
F5
26
35
15
PB0
I/O
PB0
ADC12_IN8/
TIM3_CH3(8)
TIM1_CH2N
19
G5
27
36
16
PB1
I/O
PB1
ADC12_IN9/
TIM3_CH4(8)
TIM1_CH3N
G5
20
G6
28
37
17
PB2
I/O FT PB2/BOOT1
H5
-
-
-
38
-
PE7
I/O FT
PE7
TIM1_ETR
J5
-
-
-
39
-
PE8
I/O FT
PE8
TIM1_CH1N
K5
-
-
-
40
-
PE9
I/O FT
PE9
TIM1_CH1
G6
-
-
-
41
-
PE10
I/O FT
PE10
TIM1_CH2N
H6
-
-
-
42
-
PE11
I/O FT
PE11
TIM1_CH2
J6
-
-
-
43
-
PE12
I/O FT
PE12
TIM1_CH3N
K6
-
-
-
44
-
PE13
I/O FT
PE13
TIM1_CH3
G7
-
-
-
45
-
PE14
I/O FT
PE14
TIM1_CH4
H7
-
-
-
46
-
PE15
I/O FT
PE15
TIM1_BKIN
J7
21
G7
29
47
-
PB10
I/O FT
PB10
I2C2_SCL/
USART3_TX(8)
TIM2_CH3
K7
22
H7
30
48
-
PB11
I/O FT
PB11
I2C2_SDA/
USART3_RX(8)
TIM2_CH4
E7
23
D6
31
49
18
VSS_1
K3
17
H4
23
32
G4
-
H5
24
H4
-
H6
J4
18
K4
14
S
VSS_1
Doc ID 13587 Rev 11
27/92
Pinouts and pin description
Medium-density STM32F103xx pin definitions (continued)
LQFP48
TFBGA64
LQFP64
LQFP100
VFQFPN36
F7
24
E6
32
50
19
Pin name
VDD_1
Type(1)
LFBGA100
Pins
I / O Level(2)
Table 5.
STM32F103x8, STM32F103xB
S
Alternate functions(4)
Main
function(3)
(after reset)
Default
Remap
VDD_1
K8
25
H8
33
51
-
PB12
I/O FT
PB12
SPI2_NSS/
I2C2_SMBAl/
USART3_CK(8)/
TIM1_BKIN(8)
J8
26
G8
34
52
-
PB13
I/O FT
PB13
SPI2_SCK/
USART3_CTS(8)/
TIM1_CH1N (8)
H8
27
F8
35
53
-
PB14
I/O FT
PB14
SPI2_MISO/
USART3_RTS(8)
TIM1_CH2N (8)
G8
28
F7
36
54
-
PB15
I/O FT
PB15
SPI2_MOSI/
TIM1_CH3N(8)
K9
-
-
-
55
-
PD8
I/O FT
PD8
USART3_TX
J9
-
-
-
56
-
PD9
I/O FT
PD9
USART3_RX
H9
-
-
-
57
-
PD10
I/O FT
PD10
USART3_CK
G9
-
-
-
58
-
PD11
I/O FT
PD11
USART3_CTS
K10
-
-
-
59
-
PD12
I/O FT
PD12
TIM4_CH1 /
USART3_RTS
J10
-
-
-
60
-
PD13
I/O FT
PD13
TIM4_CH2
H10
-
-
-
61
-
PD14
I/O FT
PD14
TIM4_CH3
G10
-
-
-
62
-
PD15
I/O FT
PD15
TIM4_CH4
F10
-
F6
37
63
-
PC6
I/O FT
PC6
TIM3_CH1
E10
E7
38
64
-
PC7
I/O FT
PC7
TIM3_CH2
F9
E8
39
65
-
PC8
I/O FT
PC8
TIM3_CH3
TIM3_CH4
E9
-
D8
40
66
-
PC9
I/O FT
PC9
D9
29
D7
41
67
20
PA8
I/O FT
PA8
USART1_CK/
TIM1_CH1(8)/MCO
C9
30
C7
42
68
21
PA9
I/O FT
PA9
USART1_TX(8)/
TIM1_CH2(8)
D10 31
C6
43
69
22
PA10
I/O FT
PA10
USART1_RX(8)/
TIM1_CH3(8)
C10 32
C8
44
70
23
PA11
I/O FT
PA11
USART1_CTS/
CANRX(8)/ USBDM
TIM1_CH4(8)
B10 33
B8
45
71
24
PA12
I/O FT
PA12
USART1_RTS/
CANTX(8) //USBDP
TIM1_ETR(8)
28/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Medium-density STM32F103xx pin definitions (continued)
LQFP64
LQFP100
VFQFPN36
A8
46
72
25
Pin name
PA13
Type(1)
TFBGA64
A10 34
LFBGA100
LQFP48
Pins
I / O Level(2)
Table 5.
Pinouts and pin description
Alternate functions(4)
Main
function(3)
(after reset)
Default
I/O FT JTMS/SWDIO
Remap
PA13
F8
-
-
-
73
-
Not connected
E6
35
D5
47
74
26
VSS_2
S
VSS_2
F6
36
E5
48
75
27
VDD_2
S
VDD_2
A9
37
A7
49
76
28
PA14
I/O FT JTCK/SWCLK
A8
38
A6
50
77
29
PA15
I/O FT
JTDI
TIM2_CH1_ETR/
PA15 /SPI1_NSS
B9
-
B7
51
78
PC10
I/O FT
PC10
USART3_TX
B8
-
B6
52
79
PC11
I/O FT
PC11
USART3_RX
C8
-
C5
53
80
PC12
I/O FT
PC12
USART3_CK
OSC_IN(9)
CANRX
D8
5
C1
5
81
2
PD0
I/O FT
E8
6
D1
6
82
3
PD1
I/O FT OSC_OUT(9)
B5
54
83
-
PD2
I/O FT
PD2
B7
PA14
CANTX
TIM3_ETR
C7
-
-
-
84
-
PD3
I/O FT
PD3
USART2_CTS
D7
-
-
-
85
-
PD4
I/O FT
PD4
USART2_RTS
B6
-
-
-
86
-
PD5
I/O FT
PD5
USART2_TX
C6
-
-
-
87
-
PD6
I/O FT
PD6
USART2_RX
D6
-
-
-
88
-
PD7
I/O FT
PD7
USART2_CK
A7
39
A5
55
89
30
PB3
I/O FT
JTDO
TIM2_CH2 / PB3
TRACESWO
SPI1_SCK
A6
40
A4
56
90
31
PB4
I/O FT
JNTRST
TIM3_CH1/ PB4/
SPI1_MISO
C5
41
C4
57
91
32
PB5
I/O
PB5
I2C1_SMBAl
TIM3_CH2 /
SPI1_MOSI
B5
42
D3
58
92
33
PB6
I/O FT
PB6
I2C1_SCL(8)/
TIM4_CH1(8)
USART1_TX
A5
43
C3
59
93
34
PB7
I/O FT
PB7
I2C1_SDA(8)/
TIM4_CH2(8)
USART1_RX
D5
44
B4
60
94
35
BOOT0
B4
45
B3
61
95
-
PB8
I/O FT
PB8
TIM4_CH3(8)
I2C1_SCL /
CANRX
A4
46
A3
62
96
-
PB9
I/O FT
PB9
TIM4_CH4(8)
I2C1_SDA/
CANTX
I
BOOT0
Doc ID 13587 Rev 11
29/92
Pinouts and pin description
Medium-density STM32F103xx pin definitions (continued)
Alternate functions(4)
LQFP64
LQFP100
VFQFPN36
TIM4_ETR
TFBGA64
Default
LQFP48
Main
function(3)
(after reset)
LFBGA100
Type(1)
Pins
I / O Level(2)
Table 5.
STM32F103x8, STM32F103xB
D4
-
-
-
97
-
PE0
I/O FT
PE0
C4
-
-
-
98
-
PE1
I/O FT
PE1
E5
47
D4
63
99
36
VSS_3
S
VSS_3
F5
48
E4
64
100
1
VDD_3
S
VDD_3
Pin name
Remap
1. I = input, O = output, S = supply.
2. FT = 5 V tolerant.
3. Function availability depends on the chosen device. For devices having reduced peripheral counts, it is always the lower
number of peripheral that is included. For example, if a device has only one SPI and two USARTs, they will be called SPI1
and USART1 & USART2, respectively. Refer to Table 2 on page 10.
4. If several peripherals share the same I/O pin, to avoid conflict between these alternate functions only one peripheral should
be enabled at a time through the peripheral clock enable bit (in the corresponding RCC peripheral clock enable register).
5. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 in output mode is limited: the speed should not exceed 2 MHz with a maximum
load of 30 pF and these IOs must not be used as a current source (e.g. to drive an LED).
6. Main function after the first backup domain power-up. Later on, it depends on the contents of the Backup registers even
after reset (because these registers are not reset by the main reset). For details on how to manage these IOs, refer to the
Battery backup domain and BKP register description sections in the STM32F10xxx reference manual, available from the
STMicroelectronics website: www.st.com.
7. Unlike in the LQFP64 package, there is no PC3 in the TFBGA64 package. The VREF+ functionality is provided instead.
8. This alternate function can be remapped by software to some other port pins (if available on the used package). For more
details, refer to the Alternate function I/O and debug configuration section in the STM32F10xxx reference manual, available
from the STMicroelectronics website: www.st.com.
9. The pins number 2 and 3 in the VFQFPN36 package, 5 and 6 in the LQFP48 and LQFP64 packages, and C1 and C2 in the
TFBGA64 package are configured as OSC_IN/OSC_OUT after reset, however the functionality of PD0 and PD1 can be
remapped by software on these pins. For the LQFP100 package, PD0 and PD1 are available by default, so there is no
need for remapping. For more details, refer to the Alternate function I/O and debug configuration section in the
STM32F10xxx reference manual.
The use of PD0 and PD1 in output mode is limited as they can only be used at 50 MHz in output mode.
30/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
4
Memory mapping
Memory mapping
The memory map is shown in Figure 9.
Figure 9.
Memory map
APB memory space
0xFFFF FFFF
reserved
0xE010 0000
reserved
0xFFFF FFFF
0x6000 0000
reserved
0x4002 3400
CRC
7
0xE010 0000
0xE000 0000
0x4002 3000
reserved
0x4002 2400
Cortex- M3 Internal
Peripherals
Flash Interface
0x4002 2000
reserved
0x4002 1400
0x4002 1000
RCC
reserved
6
0x4002 0400
DMA
0x4002 0000
reserved
0xC000 0000
0x4001 3C00
0x4001 3800
0x4001 3400
5
USART1
reserved
SPI1
0x4001 3000
TIM1
0x4001 2C00
ADC2
0xA000 0000
0x4001 2800
ADC1
0x4001 2400
rese rve d
4
0x4001 1C00
0x1FFF FFFF
rese rved
0x1FFF F80F
Por t E
0x4001 1800
Port D
0x8000 0000
Option Bytes
0x1FFF F800
0x4001 1400
Port C
0x4001 1000
Port B
0x4001 0C00
3
System memory
Port A
0x4001 0800
EXTI
0x4001 0400
AFIO
0x1FFF F000
0x6000 0000
0x4001 0000
reserved
0x4000 7400
PWR
0x4000 7000
2
BKP
0x4000 6C00
rese rved
0x4000 0000
Peripherals
reserved
0x4000 6800
0x4000 6400
0x4000 6000
bxCAN
shared 512 byte
USB/CAN SRAM
USB Reg isters
0x4000 5C00
1
I2C2
0x4000 5800
I2C1
0x2000 0000
0x4000 5400
SRAM
reserved
0x4000 4C00
0x0801 FFFF
USART3
0x4000 4800
USART2
0
0x4000 4400
Flash memory
reserved
0x4000 3C00
SPI2
0x0800 0000
0x0000 0000
Aliased to Flash or system
memory depending on
0x0000 0000 BOOT pins
0x4000 3800
reserved
0x4000 3400
IWDG
0x4000 3000
WWDG
0x4000 2C00
RTC
0x4000 2800
reserved
Reserved
0x4000 0C00
TIM4
0x4000 0800
0x4000 0400
0x4000 0000
TIM3
TIM2
ai14394f
Doc ID 13587 Rev 11
31/92
Electrical characteristics
STM32F103x8, STM32F103xB
5
Electrical characteristics
5.1
Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
5.1.1
Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3).
5.1.2
Typical values
Unless otherwise specified, typical data are based on TA = 25 °C, VDD = 3.3 V (for the
2 V  VDD  3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean±2).
5.1.3
Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
5.1.4
Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 10.
5.1.5
Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 11.
32/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Electrical characteristics
Figure 10. Pin loading conditions
Figure 11. Pin input voltage
STM32F103xx pin
STM32F103xx pin
C = 50 pF
VIN
ai14141
5.1.6
ai14142
Power supply scheme
Figure 12. Power supply scheme
VBAT
Backup circuitry
(OSC32K,RTC,
Wake-up logic
Backup registers)
OUT
GP I/Os
IN
Level shifter
Po wer swi tch
1.8-3.6V
IO
Logic
Kernel logic
(CPU,
Digital
& Memories)
VDD
VDD
1/2/3/4/5
5 × 100 nF
+ 1 × 4.7 µF
VDD
1/2/3/4/5
VDDA
VREF
10 nF
+ 1 µF
Regulator
VSS
10 nF
+ 1 µF
VREF+
VREF-
ADC
Analog:
RCs, PLL,
...
VSSA
ai14125d
Caution:
In Figure 12, the 4.7 µF capacitor must be connected to VDD3.
Doc ID 13587 Rev 11
33/92
Electrical characteristics
5.1.7
STM32F103x8, STM32F103xB
Current consumption measurement
Figure 13. Current consumption measurement scheme
IDD_VBAT
VBAT
IDD
VDD
VDDA
ai14126
5.2
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 6: Voltage characteristics,
Table 7: Current characteristics, and Table 8: Thermal characteristics may cause permanent
damage to the device. These are stress ratings only and functional operation of the device
at these conditions is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Table 6.
Symbol
VDD–VSS
VIN
|VDDx|
|VSSX VSS|
VESD(HBM)
Voltage characteristics
Ratings
Min
Max
–0.3
4.0
Input voltage on five volt tolerant pin(2)
VSS  0.3
+5.5
Input voltage on any other pin(2)
VSS 0.3
VDD+0.3
External main supply voltage (including VDDA
and VDD)(1)
Variations between different VDD power pins
50
Variations between all the different ground pins
50
Electrostatic discharge voltage (human body
model)
Unit
V
mV
see Section 5.3.11:
Absolute maximum ratings
(electrical sensitivity)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
2. IINJ(PIN) must never be exceeded (see Table 7: Current characteristics). This is implicitly insured if VIN
maximum is respected. If VIN maximum cannot be respected, the injection current must be limited
externally to the IINJ(PIN) value. A positive injection is induced by VIN> VINmax while a negative injection is
induced by VIN < VSS.
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Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Table 7.
Electrical characteristics
Current characteristics
Symbol
Ratings
Max.
Total current into VDD/VDDA power lines (source)(1)
IVDD
Total current out of VSS ground lines (sink)
IVSS
150
(1)
150
Output current sunk by any I/O and control pin
IIO
Unit
25
Output current source by any I/Os and control pin
 25
Injected current on NRST pin
±5
mA
IINJ(PIN) (2)(3)
Injected current on HSE OSC_IN and LSE OSC_IN pins
Injected current on any other pin
IINJ(PIN)(2)
±5
(4)
±5
Total injected current (sum of all I/O and control pins)(4)
± 25
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
2. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum
cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive
injection is induced by VIN > VDD while a negative injection is induced by VIN < VSS.
3. Negative injection disturbs the analog performance of the device. See note in Section 5.3.17: 12-bit ADC
characteristics.
4. When several inputs are submitted to a current injection, the maximum IINJ(PIN) is the absolute sum of the
positive and negative injected currents (instantaneous values). These results are based on
characterization with IINJ(PIN) maximum current injection on four I/O port pins of the device.
Table 8.
Thermal characteristics
Symbol
TSTG
TJ
Ratings
Storage temperature range
Maximum junction temperature
5.3
Operating conditions
5.3.1
General operating conditions
Table 9.
Symbol
Value
Unit
–65 to +150
°C
150
°C
General operating conditions
Parameter
Conditions
Min
Max
fHCLK
Internal AHB clock frequency
0
72
fPCLK1
Internal APB1 clock frequency
0
36
fPCLK2
Internal APB2 clock frequency
0
72
Standard operating voltage
2
3.6
2
3.6
2.4
3.6
1.8
3.6
VDD
VDDA(1)
VBAT
Analog operating voltage
(ADC not used)
Analog operating voltage
(ADC used)
Must be the same potential
as VDD(2)
Backup operating voltage
Doc ID 13587 Rev 11
Unit
MHz
V
V
V
35/92
Electrical characteristics
Table 9.
Symbol
PD
STM32F103x8, STM32F103xB
General operating conditions (continued)
Parameter
Conditions
Min
Max
LFBGA100
454
LQFP100
434
Power dissipation at TA = 85 °C TFBGA64
for suffix 6 or TA = 105 °C for
LQFP64
suffix 7(3)
308
Unit
mW
444
LQFP48
363
VFQFPN36
1110
Ambient temperature for 6
suffix version
Maximum power dissipation
–40
85
Low power dissipation
–40
105
Ambient temperature for 7
suffix version
Maximum power dissipation
–40
105
Low power dissipation(4)
–40
125
6 suffix version
–40
105
7 suffix version
–40
125
(4)
°C
TA
TJ
°C
Junction temperature range
°C
1. When the ADC is used, refer to Table 45: ADC characteristics.
2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 82).
4. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 82).
5.3.2
Operating conditions at power-up / power-down
Subject to general operating conditions for TA.
Table 10.
Symbol
tVDD
5.3.3
Operating conditions at power-up / power-down
Parameter
Conditions
Min
VDD rise time rate
0
VDD fall time rate
20
Max
Unit


µs/V
Embedded reset and power control block characteristics
The parameters given in Table 11 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
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Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Table 11.
Embedded reset and power control block characteristics
Symbol
Parameter
Programmable voltage
detector level selection
VPVD
VPVDhyst
Electrical characteristics
(2)
VPOR/PDR
VPDRhyst
(2)
Conditions
Min
Typ
Max
Unit
PLS[2:0]=000 (rising edge)
2.1
2.18
2.26
V
PLS[2:0]=000 (falling edge)
2
2.08
2.16
V
PLS[2:0]=001 (rising edge)
2.19
2.28
2.37
V
PLS[2:0]=001 (falling edge)
2.09
2.18
2.27
V
PLS[2:0]=010 (rising edge)
2.28
2.38
2.48
V
PLS[2:0]=010 (falling edge)
2.18
2.28
2.38
V
PLS[2:0]=011 (rising edge)
2.38
2.48
2.58
V
PLS[2:0]=011 (falling edge)
2.28
2.38
2.48
V
PLS[2:0]=100 (rising edge)
2.47
2.58
2.69
V
PLS[2:0]=100 (falling edge)
2.37
2.48
2.59
V
PLS[2:0]=101 (rising edge)
2.57
2.68
2.79
V
PLS[2:0]=101 (falling edge)
2.47
2.58
2.69
V
PLS[2:0]=110 (rising edge)
2.66
2.78
2.9
V
PLS[2:0]=110 (falling edge)
2.56
2.68
2.8
V
PLS[2:0]=111 (rising edge)
2.76
2.88
3
V
PLS[2:0]=111 (falling edge)
2.66
2.78
2.9
V
PVD hysteresis
100
Power on/power down
reset threshold
mV
Falling edge
1.8(1)
1.88
1.96
V
Rising edge
1.84
1.92
2.0
V
PDR hysteresis
40
TRSTTEMPO(2) Reset temporization
1
2.5
mV
4.5
ms
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
2. Guaranteed by design, not tested in production.
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Electrical characteristics
5.3.4
STM32F103x8, STM32F103xB
Embedded reference voltage
The parameters given in Table 12 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
Table 12.
Symbol
VREFINT
Embedded internal reference voltage
Parameter
Internal reference voltage
Conditions
Min
Typ
Max
Unit
–40 °C < TA < +105 °C
1.16
1.20
1.26
V
–40 °C < TA < +85 °C
1.16
1.20
1.24
V
5.1
17.1(2)
µs
10
mV
100
ppm/°C
ADC sampling time when
TS_vrefint(1) reading the internal reference
voltage
Internal reference voltage
VRERINT(2) spread over the temperature
range
TCoeff(2)
VDD = 3 V ±10 mV
Temperature coefficient
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production.
5.3.5
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 13: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to Dhrystone 2.1 code.
Maximum current consumption
The MCU is placed under the following conditions:
●
All I/O pins are in input mode with a static value at VDD or VSS (no load)
●
All peripherals are disabled except when explicitly mentioned
●
The Flash memory access time is adjusted to the fHCLK frequency (0 wait state from 0
to 24 MHz, 1 wait state from 24 to 48 MHz and 2 wait states above)
●
Prefetch in ON (reminder: this bit must be set before clock setting and bus prescaling)
●
When the peripherals are enabled fPCLK1 = fHCLK/2, fPCLK2 = fHCLK
The parameters given in Table 13, Table 14 and Table 15 are derived from tests performed
under ambient temperature and VDD supply voltage conditions summarized in Table 9.
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Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Table 13.
Electrical characteristics
Maximum current consumption in Run mode, code with data processing
running from Flash
Max(1)
Symbol
Parameter
Conditions
fHCLK
TA = 105 °C
72 MHz
50
50.3
48 MHz
36.1
36.2
36 MHz
28.6
28.7
24 MHz
19.9
20.1
16 MHz
14.7
14.9
8 MHz
8.6
8.9
72 MHz
32.8
32.9
48 MHz
24.4
24.5
External clock(2), all 36 MHz
peripherals disabled 24 MHz
19.8
19.9
13.9
14.2
16 MHz
10.7
11
8 MHz
6.8
7.1
External clock(2), all
peripherals enabled
IDD
Unit
TA = 85 °C
Supply current in
Run mode
mA
1. Based on characterization, not tested in production.
2. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
Table 14.
Maximum current consumption in Run mode, code with data processing
running from RAM
Max(1)
Symbol
Parameter
Conditions
External clock(2), all
peripherals enabled
IDD
Supply
current in
Run mode
fHCLK
Unit
TA = 85 °C
TA = 105 °C
72 MHz
48
50
48 MHz
31.5
32
36 MHz
24
25.5
24 MHz
17.5
18
16 MHz
12.5
13
8 MHz
7.5
8
72 MHz
29
29.5
48 MHz
20.5
21
External clock(2), all 36 MHz
peripherals disabled 24 MHz
16
16.5
11.5
12
16 MHz
8.5
9
8 MHz
5.5
6
mA
1. Based on characterization, tested in production at VDD max, fHCLK max.
2. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
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Electrical characteristics
STM32F103x8, STM32F103xB
Figure 14. Typical current consumption in Run mode versus frequency (at 3.6 V) code with data processing running from RAM, peripherals enabled
45
40
Consumption (mA)
35
30
72 MHz
36 MHz
16 MHz
8 MHz
25
20
15
10
5
0
-40
0
25
70
85
105
Temperature (°C)
Figure 15. Typical current consumption in Run mode versus frequency (at 3.6 V) code with data processing running from RAM, peripherals disabled
30
Consumption (mA)
25
20
72 MHz
36 MHz
16 MHz
8 MHz
15
10
5
0
-40
0
25
70
Temperature (°C)
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Doc ID 13587 Rev 11
85
105
STM32F103x8, STM32F103xB
Table 15.
Electrical characteristics
Maximum current consumption in Sleep mode, code running from Flash
or RAM
Max(1)
Symbol
Parameter
Conditions
External clock(2), all
peripherals enabled
IDD
Supply current in
Sleep mode
External clock(2), all
peripherals disabled
fHCLK
Unit
TA = 85 °C
TA = 105 °C
72 MHz
30
32
48 MHz
20
20.5
36 MHz
15.5
16
24 MHz
11.5
12
16 MHz
8.5
9
8 MHz
5.5
6
72 MHz
7.5
8
48 MHz
6
6.5
36 MHz
5
5.5
24 MHz
4.5
5
16 MHz
4
4.5
8 MHz
3
4
mA
1. based on characterization, tested in production at VDD max, fHCLK max with peripherals enabled.
2. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
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Electrical characteristics
Table 16.
STM32F103x8, STM32F103xB
Typical and maximum current consumptions in Stop and Standby modes
Typ(1)
Symbol
Parameter
Conditions
VDD/VBAT VDD/VBAT VDD/VBAT TA = TA = Unit
= 2.0 V
= 2.4 V
= 3.3 V 85 °C 105 °C
Regulator in Run mode, low-speed
and high-speed internal RC
oscillators and high-speed oscillator
Supply current OFF (no independent watchdog)
in Stop mode Regulator in Low Power mode, low-
IDD
Max
speed and high-speed internal RC
oscillators and high-speed oscillator
OFF (no independent watchdog)
Low-speed internal RC oscillator and
independent watchdog ON
Supply current Low-speed internal RC oscillator
in Standby
ON, independent watchdog OFF
mode
Low-speed internal RC oscillator and
independent watchdog OFF, lowspeed oscillator and RTC OFF
Backup
IDD_VBAT domain supply Low-speed oscillator and RTC ON
current
-
23.5
24
200
370
-
13.5
14
180
340
-
2.6
3.4
-
-
-
2.4
3.2
-
-
-
1.7
2
4
5
0.9
1.1
1.4
1.9(2)
2.2
µA
1. Typical values are measured at TA = 25 °C.
2. Based on characterization, not tested in production.
Figure 16. Typical current consumption on VBAT with RTC on versus temperature at different
VBAT values
Consumption ( µA )
2.5
2
2V
1.5
2.4 V
1
3V
0.5
3.6 V
0
–40 °C
25 °C
70 °C
85 °C
105 °C
Temperature (°C)
ai17351
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STM32F103x8, STM32F103xB
Electrical characteristics
Figure 17. Typical current consumption in Stop mode with regulator in Run mode versus
temperature at VDD = 3.3 V and 3.6 V
300
Consumption (µA)
250
200
3.3 V
150
3.6 V
100
50
0
-45
25
70
90
110
Temperature (°C)
Figure 18. Typical current consumption in Stop mode with regulator in Low-power mode versus
temperature at VDD = 3.3 V and 3.6 V
300
Consumption (µA)
250
200
3.3 V
150
3.6 V
100
50
0
-40
0
25
70
85
105
Temperature (°C)
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Electrical characteristics
STM32F103x8, STM32F103xB
Figure 19. Typical current consumption in Standby mode versus temperature at
VDD = 3.3 V and 3.6 V
4.5
4
Consumption (µA)
3.5
3
2.5
3.3 V
2
3.6 V
1.5
1
0.5
0
–45 °C
25 °C
85 °C
105 °C
Temperature (°C)
Typical current consumption
The MCU is placed under the following conditions:
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●
All I/O pins are in input mode with a static value at VDD or VSS (no load).
●
All peripherals are disabled except if it is explicitly mentioned.
●
The Flash access time is adjusted to fHCLK frequency (0 wait state from 0 to 24 MHz, 1
wait state from 24 to 48 MHz and 2 wait states above).
●
Ambient temperature and VDD supply voltage conditions summarized in Table 9.
●
Prefetch is ON (Reminder: this bit must be set before clock setting and bus prescaling)
●
When the peripherals are enabled fPCLK1 = fHCLK/4, fPCLK2 = fHCLK/2, fADCCLK =
fPCLK2/4
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Table 17.
Electrical characteristics
Typical current consumption in Run mode, code with data processing
running from Flash
Typ(1)
Symbol
Parameter
Conditions
(3)
External clock
IDD
Supply
current in
Run mode
Running on high
speed internal RC
(HSI), AHB
prescaler used to
reduce the
frequency
fHCLK
All peripherals All peripherals
disabled
enabled(2)
72 MHz
36
27
48 MHz
24.2
18.6
36 MHz
19
14.8
24 MHz
12.9
10.1
16 MHz
9.3
7.4
8 MHz
5.5
4.6
4 MHz
3.3
2.8
2 MHz
2.2
1.9
1 MHz
1.6
1.45
500 kHz
1.3
1.25
125 kHz
1.08
1.06
64 MHz
31.4
23.9
48 MHz
23.5
17.9
36 MHz
18.3
14.1
24 MHz
12.2
9.5
16 MHz
8.5
6.8
8 MHz
4.9
4
4 MHz
2.7
2.2
2 MHz
1.6
1.4
1 MHz
1.02
0.9
500 kHz
0.73
0.67
125 kHz
0.5
0.48
Unit
mA
mA
1. Typical values are measures at TA = 25 °C, VDD = 3.3 V.
2. Add an additional power consumption of 0.8 mA per ADC for the analog part. In applications, this
consumption occurs only while the ADC is on (ADON bit is set in the ADC_CR2 register).
3. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
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Electrical characteristics
Table 18.
STM32F103x8, STM32F103xB
Typical current consumption in Sleep mode, code running from Flash or
RAM
Typ(1)
Symbol Parameter
Conditions
External clock
IDD
Supply
current in
Sleep mode
(3)
fHCLK
All peripherals All peripherals
enabled(2)
disabled
72 MHz
14.4
5.5
48 MHz
9.9
3.9
36 MHz
7.6
3.1
24 MHz
5.3
2.3
16 MHz
3.8
1.8
8 MHz
2.1
1.2
4 MHz
1.6
1.1
2 MHz
1.3
1
1 MHz
1.11
0.98
500 kHz
1.04
0.96
125 kHz
0.98
0.95
64 MHz
12.3
4.4
48 MHz
9.3
3.3
36 MHz
7
2.5
4.8
1.8
3.2
1.2
1.6
0.6
1
0.5
0.72
0.47
1 MHz
0.56
0.44
500 kHz
0.49
0.42
125 kHz
0.43
0.41
mA
24 MHz
Running on high
16 MHz
speed internal RC
(HSI), AHB prescaler 8 MHz
used to reduce the
4 MHz
frequency
2 MHz
1. Typical values are measures at TA = 25 °C, VDD = 3.3 V.
2. Add an additional power consumption of 0.8 mA per ADC for the analog part. In applications, this
consumption occurs only while the ADC is on (ADON bit is set in the ADC_CR2 register).
3. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
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Unit
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Electrical characteristics
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in Table 19. The MCU is placed
under the following conditions:
●
all I/O pins are in input mode with a static value at VDD or VSS (no load)
●
all peripherals are disabled unless otherwise mentioned
●
the given value is calculated by measuring the current consumption
●
–
with all peripherals clocked off
–
with only one peripheral clocked on
ambient operating temperature and VDD supply voltage conditions summarized in
Table 6
Table 19.
Peripheral current consumption(1)
Peripheral
Typical consumption at 25 °C
TIM2
1.2
TIM3
1.2
TIM4
0.9
SPI2
0.2
USART2
0.35
USART3
0.35
I2C1
0.39
I2C2
0.39
USB
0.65
CAN
0.72
GPIO A
0.47
GPIO B
0.47
GPIO C
0.47
GPIO D
0.47
GPIO E
0.47
ADC1(2)
1.81
ADC2
1.78
TIM1
1.6
SPI1
0.43
USART1
0.85
APB1
APB2
Unit
mA
mA
1. fHCLK = 72 MHz, fAPB1 = fHCLK/2, fAPB2 = fHCLK, default prescaler value for each peripheral.
2. Specific conditions for ADC: fHCLK = 56 MHz, fAPB1 = fHCLK/2, fAPB2 = fHCLK, fADCCLK = fAPB2/4, ADON bit
in the ADC_CR2 register is set to 1.
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Electrical characteristics
5.3.6
STM32F103x8, STM32F103xB
External clock source characteristics
High-speed external user clock generated from an external source
The characteristics given in Table 20 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 9.
Table 20.
High-speed external user clock characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
1
8
25
MHz
fHSE_ext
User external clock source
frequency(1)
VHSEH
OSC_IN input pin high level voltage
0.7VDD
VDD
VHSEL
OSC_IN input pin low level voltage
VSS
0.3VDD
tw(HSE)
tw(HSE)
OSC_IN high or low time(1)
tr(HSE)
tf(HSE)
OSC_IN rise or fall time(1)
Cin(HSE)
16
ns
20
OSC_IN input capacitance(1)
5
DuCy(HSE) Duty cycle
IL
V
pF
45
OSC_IN Input leakage current
VSS  VIN  VDD
55
%
±1
µA
1. Guaranteed by design, not tested in production.
Low-speed external user clock generated from an external source
The characteristics given in Table 21 result from tests performed using an low-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 9.
Table 21.
Symbol
Low-speed external user clock characteristics
Parameter
Conditions
Min
Typ
Max
Unit
32.768
1000
kHz
fLSE_ext
User External clock source
frequency(1)
VLSEH
OSC32_IN input pin high level
voltage
0.7VDD
VDD
VLSEL
OSC32_IN input pin low level
voltage
VSS
0.3VDD
tw(LSE)
tw(LSE)
OSC32_IN high or low time(1)
450
tr(LSE)
tf(LSE)
OSC32_IN rise or fall time(1)
V
Cin(LSE)
ns
50
OSC32_IN input capacitance(1)
5
DuCy(LSE) Duty cycle
IL
30
OSC32_IN Input leakage
current
VSS  VIN  VDD
1. Guaranteed by design, not tested in production.
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Doc ID 13587 Rev 11
pF
70
%
±1
µA
STM32F103x8, STM32F103xB
Electrical characteristics
Figure 20. High-speed external clock source AC timing diagram
VHSEH
90%
VHSEL
10%
tr(HSE)
tf(HSE)
tW(HSE)
t
tW(HSE)
THSE
EXTER NAL
CLOCK SOURC E
fHSE_ext
OSC _IN
IL
STM32F103xx
ai14143
Figure 21. Low-speed external clock source AC timing diagram
VLSEH
90%
VLSEL
10%
tr(LSE)
tf(LSE)
tW(LSE)
OSC32_IN
IL
tW(LSE)
t
TLSE
EXTER NAL
CLOCK SOURC E
fLSE_ext
STM32F103xx
ai14144b
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 16 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on characterization
results obtained with typical external components specified in Table 22. In the application,
the resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
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Electrical characteristics
Table 22.
Symbol
STM32F103x8, STM32F103xB
HSE 4-16 MHz oscillator characteristics(1) (2)
Parameter
fOSC_IN
Conditions
Typ
Max
Unit
4
8
16
MHz
Oscillator frequency
RF
Feedback resistor
C
Recommended load capacitance
versus equivalent serial
resistance of the crystal (RS)(3)
i2
HSE driving current
(4)
200
k
30
pF
RS = 30
VDD = 3.3 V, VIN = VSS
with 30 pF load
Oscillator transconductance
gm
tSU(HSE
Min
Startup
startup time
1
25
mA
mA/V
VDD is stabilized
2
ms
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Based on characterization, not tested in production.
3. The relatively low value of the RF resistor offers a good protection against issues resulting from use in a
humid environment, due to the induced leakage and the bias condition change. However, it is
recommended to take this point into account if the MCU is used in tough humidity conditions.
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 22). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2. Refer to the application note AN2867 “Oscillator design guide for ST
microcontrollers” available from the ST website www.st.com.
Figure 22. Typical application with an 8 MHz crystal
Resonator with
integrated capacitors
CL1
fHSE
OSC_IN
8 MH z
resonator
CL2
REXT(1)
RF
OSC_OU T
Bias
controlled
gain
STM32F103xx
ai14145
1. REXT value depends on the crystal characteristics.
Low-speed external clock generated from a crystal/ceramic resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on characterization
results obtained with typical external components specified in Table 23. In the application,
the resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
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STM32F103x8, STM32F103xB
Table 23.
Electrical characteristics
LSE oscillator characteristics (fLSE = 32.768 kHz) (1)
Symbol
Parameter
Conditions
RF
Feedback resistor
C(2)
Recommended load capacitance
versus equivalent serial
resistance of the crystal (RS)(3)
Typ
Max
Unit
5
I2
LSE driving current
gm
Oscillator Transconductance
tSU(LSE)(4)
Min
M
RS = 30 k
15
pF
VDD = 3.3 V, VIN = VSS
1.4
µA
5
startup time
VDD is stabilized
µA/V
3
s
1. Based on characterization, not tested in production.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator
design guide for ST microcontrollers.
3. The oscillator selection can be optimized in terms of supply current using an high quality resonator with
small RS value for example MSIV-TIN32.768kHz. Refer to crystal manufacturer for more details
4.
tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768
kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer
Note:
For CL1 and CL2 it is recommended to use high-quality ceramic capacitors in the 5 pF to
15 pF range selected to match the requirements of the crystal or resonator. CL1 and CL2, are
usually the same size. The crystal manufacturer typically specifies a load capacitance which
is the series combination of CL1 and CL2.
Load capacitance CL has the following formula: CL = CL1 x CL2 / (CL1 + CL2) + Cstray where
Cstray is the pin capacitance and board or trace PCB-related capacitance. Typically, it is
between 2 pF and 7 pF.
Caution:
To avoid exceeding the maximum value of CL1 and CL2 (15 pF) it is strongly recommended
to use a resonator with a load capacitance CL  7 pF. Never use a resonator with a load
capacitance of 12.5 pF.
Example: if you choose a resonator with a load capacitance of CL = 6 pF, and Cstray = 2 pF,
then CL1 = CL2 = 8 pF.
Figure 23. Typical application with a 32.768 kHz crystal
Resonator with
integrated capacitors
CL1
fLSE
OSC32_IN
32.768 kH z
resonator
CL2
RF
Bias
controlled
gain
OSC32_OU T
STM32F103xx
ai14146
5.3.7
Internal clock source characteristics
The parameters given in Table 24 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
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Electrical characteristics
STM32F103x8, STM32F103xB
High-speed internal (HSI) RC oscillator
Table 24.
Symbol
fHSI
HSI oscillator characteristics(1)
Parameter
Conditions
Min
Frequency
Typ
Max
8
MHz
User-trimmed with the RCC_CR
register(2)
ACCHSI
Unit
Accuracy of the HSI
oscillator
Factorycalibrated(4)
tsu(HSI)(4)
HSI oscillator
startup time
IDD(HSI)(4)
HSI oscillator power
consumption
1(3)
%
TA = –40 to 105 °C
–2
2.5
%
TA = –10 to 85 °C
–1.5
2.2
%
TA = 0 to 70 °C
–1.3
2
%
TA = 25 °C
–1.1
1.8
%
1
2
µs
100
µA
80
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
3. Guaranteed by design, not tested in production.
4. Based on characterization, not tested in production.
Low-speed internal (LSI) RC oscillator
Table 25.
LSI oscillator characteristics (1)
Symbol
fLSI(2)
tsu(LSI)
(3)
IDD(LSI)(3)
Parameter
Frequency
Min
Typ
Max
Unit
30
40
60
kHz
85
µs
1.2
µA
LSI oscillator startup time
LSI oscillator power consumption
0.65
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
2. Based on characterization, not tested in production.
3. Guaranteed by design, not tested in production.
Wakeup time from low-power mode
The wakeup times given in Table 26 is measured on a wakeup phase with a 8-MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
●
Stop or Standby mode: the clock source is the RC oscillator
●
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 9.
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STM32F103x8, STM32F103xB
Table 26.
Electrical characteristics
Low-power mode wakeup timings
Symbol
Parameter
tWUSLEEP(1)
tWUSTOP(1)
tWUSTDBY(1)
Typ
Unit
Wakeup from Sleep mode
1.8
µs
Wakeup from Stop mode (regulator in run mode)
3.6
Wakeup from Stop mode (regulator in low power
mode)
5.4
Wakeup from Standby mode
50
µs
µs
1. The wakeup times are measured from the wakeup event to the point in which the user application code
reads the first instruction.
5.3.8
PLL characteristics
The parameters given in Table 27 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
Table 27.
PLL characteristics
Value
Symbol
Parameter
Unit
Min(1)
Typ
Max(1)
PLL input clock(2)
1
8.0
25
MHz
PLL input clock duty cycle
40
60
%
fPLL_OUT
PLL multiplier output clock
16
72
MHz
tLOCK
PLL lock time
200
µs
Jitter
Cycle-to-cycle jitter
300
ps
fPLL_IN
1. Based on characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 28.
Symbol
tprog
tERASE
tME
Flash memory characteristics
Min(1)
Typ
Max(1)
Unit
16-bit programming time TA–40 to +105 °C
40
52.5
70
µs
Page (1 KB) erase time
TA –40 to +105 °C
20
40
ms
Mass erase time
TA –40 to +105 °C
20
40
ms
Parameter
Conditions
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Electrical characteristics
Table 28.
Symbol
IDD
Vprog
STM32F103x8, STM32F103xB
Flash memory characteristics (continued)
Max(1)
Unit
Read mode
fHCLK = 72 MHz with 2 wait
states, VDD = 3.3 V
20
mA
Write / Erase modes
fHCLK = 72 MHz, VDD = 3.3 V
5
mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
µA
3.6
V
Parameter
Supply current
Conditions
Programming voltage
Min(1)
Typ
2
1. Guaranteed by design, not tested in production.
Table 29.
Flash memory endurance and data retention
Value
Symbol
NEND
tRET
Parameter
Endurance
Data retention
Conditions
Min(1)
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
1 kcycle(2) at TA = 85 °C
30
1 kcycle(2) at TA = 105 °C
10
10 kcycles
(2)
at TA = 55 °C
Unit
Typ
Max
kcycles
Years
20
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
●
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 30. They are based on the EMS levels and classes
defined in application note AN1709.
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Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Table 30.
Electrical characteristics
EMS characteristics
Symbol
Parameter
Level/
Class
Conditions
VFESD
VDD 3.3 V, TA +25 °C,
Voltage limits to be applied on any I/O pin to
fHCLK 72 MHz
induce a functional disturbance
conforms to IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD3.3 V, TA +25 °C,
fHCLK 72 MHz
conforms to IEC 61000-4-4
4A
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●
Corrupted program counter
●
Unexpected reset
●
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 31.
Symbol
SEMI
EMI characteristics
Parameter
Peak level
Conditions
VDD 3.3 V, TA 25 °C,
LQFP100 package
compliant with
IEC 61967-2
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/48 MHz 8/72 MHz
0.1 to 30 MHz
12
12
30 to 130 MHz
22
19
130 MHz to 1GHz
23
29
SAE EMI Level
4
4
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-
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Electrical characteristics
5.3.11
STM32F103x8, STM32F103xB
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 32.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA +25 °C
conforming to
JESD22-A114
TA +25 °C
conforming to
JESD22-C101
Electrostatic discharge
VESD(CDM) voltage (charge device
model)
Class
Maximum value(1)
2
Unit
2000
V
II
500
1. Based on characterization results, not tested in production.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
●
A supply overvoltage is applied to each power supply pin
●
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 33.
Symbol
LU
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Electrical sensitivities
Parameter
Conditions
Static latch-up class
TA +105 °C conforming to JESD78A
Doc ID 13587 Rev 11
Class
II level A
STM32F103x8, STM32F103xB
5.3.12
Electrical characteristics
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 34 are derived from tests
performed under the conditions summarized in Table 9. All I/Os are CMOS and TTL
compliant.
Table 34.
I/O static characteristics
Symbol
VIL
VIH
Parameter
Conditions
Input low level voltage
Standard IO input high level
voltage
Input low level voltage
VIH
Input high level voltage
Ilkg
IO FT Schmitt trigger voltage
hysteresis(2)
Input leakage current (4)
Max
–0.5
0.8
2
VDD+0.5
2
5.5V
–0.5
0.35 VDD
0.65 VDD
VDD+0.5
CMOS ports
Standard IO Schmitt trigger
voltage hysteresis(2)
Vhys
Typ
Unit
V
TTL ports
IO FT(1) input high level voltage
VIL
Min
V
200
mV
5% VDD(3)
mV
VSS  VIN  VDD
Standard I/Os
1
µA
VIN= 5 V
I/O FT
3
RPU
Weak pull-up equivalent
resistor(5)
VIN VSS
30
40
50
k
RPD
Weak pull-down equivalent
resistor(5)
VIN VDD
30
40
50
k
CIO
I/O pin capacitance
5
pF
1. FT = Five-volt tolerant.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in
production.
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable
PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order).
All I/Os are CMOS and TTL compliant (no software configuration required), their
characteristics consider the most strict CMOS-technology or TTL parameters:
●
●
For VIH:
–
if VDD is in the [2.00 V - 3.08 V] range: CMOS characteristics but TTL included
–
if VDD is in the [3.08 V - 3.60 V] range: TTL characteristics but CMOS included
For VIL:
–
if VDD is in the [2.00 V - 2.28 V] range: TTL characteristics but CMOS included
–
if VDD is in the [2.28 V - 3.60 V] range: CMOS characteristics but TTL included
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Electrical characteristics
STM32F103x8, STM32F103xB
Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to +/-8 mA, and sink
+20 mA (with a relaxed VOL).
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2:
●
The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD (see Table 7).
●
The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
IVSS (see Table 7).
Output voltage levels
Unless otherwise specified, the parameters given in Table 35 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 9. All I/Os are CMOS and TTL compliant.
Table 35.
Symbol
Output voltage characteristics
Parameter
VOL(1)
Output low level voltage for an I/O pin
when 8 pins are sunk at same time
VOH(2)
Output high level voltage for an I/O pin
when 8 pins are sourced at same time
VOL (1)
Output low level voltage for an I/O pin
when 8 pins are sunk at same time
VOH (2)
Output high level voltage for an I/O pin
when 8 pins are sourced at same time
VOL(1)(3)
Output low level voltage for an I/O pin
when 8 pins are sunk at same time
VOH(2)(3)
Output high level voltage for an I/O pin
when 8 pins are sourced at same time
VOL(1)(3)
Output low level voltage for an I/O pin
when 8 pins are sunk at same time
VOH(2)(3)
Output high level voltage for an I/O pin
when 8 pins are sourced at same time
Conditions
TTL port
IIO = +8 mA
2.7 V < VDD < 3.6 V
CMOS port
IIO =+ 8mA
2.7 V < VDD < 3.6 V
IIO = +20 mA
2.7 V < VDD < 3.6 V
IIO = +6 mA
2 V < VDD < 2.7 V
Min
Max
Unit
0.4
V
VDD–0.4
0.4
V
2.4
1.3
V
VDD–1.3
0.4
V
VDD–0.4
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 7
and the sum of IIO (I/O ports and control pins) must not exceed IVSS.
2. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 7 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.
3. Based on characterization data, not tested in production.
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STM32F103x8, STM32F103xB
Electrical characteristics
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 24 and
Table 36, respectively.
Unless otherwise specified, the parameters given in Table 36 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 9.
Table 36.
I/O AC characteristics(1)
MODEx[1:0]
Symbol
bit value(1)
Parameter
Conditions
Min
fmax(IO)out Maximum frequency(2) CL = 50 pF, VDD = 2 V to 3.6 V
10
tf(IO)out
Output high to low
level fall time
tr(IO)out
Output low to high
level rise time
tf(IO)out
Output high to low
level fall time
tr(IO)out
Output low to high
level rise time
Fmax(IO)out Maximum
11
tf(IO)out
tr(IO)out
-
tEXTIpw
frequency(2)
Output high to low
level fall time
Output low to high
level rise time
Unit
2
MHz
125(3)
CL = 50 pF, VDD = 2 V to 3.6 V
ns
125(3)
fmax(IO)out Maximum frequency(2) CL = 50 pF, VDD = 2 V to 3.6 V
01
Max
10
MHz
25(3)
CL = 50 pF, VDD = 2 V to 3.6 V
ns
25(3)
CL = 30 pF, VDD = 2.7 V to 3.6 V
50
MHz
CL = 50 pF, VDD = 2.7 V to 3.6 V
30
MHz
CL = 50 pF, VDD = 2 V to 2.7 V
20
MHz
CL = 30 pF, VDD = 2.7 V to 3.6 V
5(3)
CL = 50 pF, VDD = 2.7 V to 3.6 V
8(3)
CL = 50 pF, VDD = 2 V to 2.7 V
12(3)
CL = 30 pF, VDD = 2.7 V to 3.6 V
5(3)
CL = 50 pF, VDD = 2.7 V to 3.6 V
8(3)
CL = 50 pF, VDD = 2 V to 2.7 V
12(3)
Pulse width of
external signals
detected by the EXTI
controller
10
ns
ns
1. The I/O speed is configured using the MODEx[1:0] bits. Refer to the STM32F10xxx reference manual for a
description of GPIO Port configuration register.
2. The maximum frequency is defined in Figure 24.
3. Guaranteed by design, not tested in production.
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Electrical characteristics
STM32F103x8, STM32F103xB
Figure 24. I/O AC characteristics definition
90%
10%
50%
50%
90%
10%
EXT ERNAL
OUTPUT
ON 50pF
tr(I O)out
tr(I O)out
T
Maximum frequency is achieved if (tr + tf) 2/3)T and if the duty cycle is (45-55%)
when loaded by 50pF
ai14131
5.3.13
NRST pin characteristics
The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 34).
Unless otherwise specified, the parameters given in Table 37 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 9.
Table 37.
Symbol
NRST pin characteristics
Parameter
Conditions
Min
Typ
Max
VIL(NRST)(1)
NRST Input low level voltage
–0.5
0.8
VIH(NRST)(1)
NRST Input high level voltage
2
VDD+0.5
Vhys(NRST)
NRST Schmitt trigger voltage
hysteresis
VF(NRST)
V
Weak pull-up equivalent resistor(2)
RPU
(1)
Unit
200
VIN VSS
30
NRST Input filtered pulse
VNF(NRST)(1) NRST Input not filtered pulse
300
40
mV
50
k
100
ns
ns
1. Guaranteed by design, not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution
to the series resistance must be minimum (~10% order).
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STM32F103x8, STM32F103xB
Electrical characteristics
Figure 25. Recommended NRST pin protection
VDD
External
reset circuit(1)
NRST(2)
RPU
Internal Reset
Filter
0.1 µF
STM32F10xxx
ai14132c
2. The reset network protects the device against parasitic resets.
3. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 37. Otherwise the reset will not be taken into account by the device.
5.3.14
TIM timer characteristics
The parameters given in Table 38 are guaranteed by design.
Refer to Section 5.3.12: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
Table 38.
Symbol
tres(TIM)
fEXT
ResTIM
tCOUNTER
TIMx(1) characteristics
Parameter
Conditions
Min
Max
1
tTIMxCLK
13.9
ns
Timer resolution time
fTIMxCLK = 72 MHz
Timer external clock
frequency on CH1 to CH4 f
TIMxCLK = 72 MHz
0
fTIMxCLK/2
MHz
0
36
MHz
16
bit
65536
tTIMxCLK
910
µs
65536 × 65536
tTIMxCLK
59.6
s
Timer resolution
16-bit counter clock period
1
when internal clock is
fTIMxCLK = 72 MHz 0.0139
selected
tMAX_COUNT Maximum possible count
Unit
fTIMxCLK = 72 MHz
1. TIMx is used as a general term to refer to the TIM1, TIM2, TIM3 and TIM4 timers.
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Electrical characteristics
5.3.15
STM32F103x8, STM32F103xB
Communications interfaces
I2C interface characteristics
Unless otherwise specified, the parameters given in Table 39 are derived from tests
performed under the ambient temperature, fPCLK1 frequency and VDD supply voltage
conditions summarized in Table 9.
The STM32F103xx performance line I2C interface meets the requirements of the standard
I2C communication protocol with the following restrictions: the I/O pins SDA and SCL are
mapped to are not “true” open-drain. When configured as open-drain, the PMOS connected
between the I/O pin and VDD is disabled, but is still present.
The I2C characteristics are described in Table 39. Refer also to Section 5.3.12: I/O port
characteristics for more details on the input/output alternate function characteristics (SDA
and SCL).
Table 39.
I2C characteristics
Standard mode I2C(1)
Symbol
Fast mode I2C(1)(2)
Parameter
Unit
Min
Max
Min
Max
tw(SCLL)
SCL clock low time
4.7
1.3
tw(SCLH)
SCL clock high time
4.0
0.6
tsu(SDA)
SDA setup time
250
100
th(SDA)
SDA data hold time
0(3)
0(4)
900(3)
tr(SDA)
tr(SCL)
SDA and SCL rise time
1000
20 + 0.1Cb
300
tf(SDA)
tf(SCL)
SDA and SCL fall time
300
th(STA)
Start condition hold time
4.0
0.6
tsu(STA)
Repeated Start condition
setup time
4.7
0.6
tsu(STO)
Stop condition setup time
4.0
0.6
s
tw(STO:STA)
Stop to Start condition time
(bus free)
4.7
1.3
s
Cb
Capacitive load for each bus
line
µs
ns
300
µs
400
400
pF
1. Guaranteed by design, not tested in production.
2. fPCLK1 must be higher than 2 MHz to achieve the maximum standard mode I2C frequency. It must be
higher than 4 MHz to achieve the maximum fast mode I2C frequency.
3. The maximum hold time of the Start condition has only to be met if the interface does not stretch the low
period of SCL signal.
4. The device must internally provide a hold time of at least 300ns for the SDA signal in order to bridge the
undefined region of the falling edge of SCL.
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STM32F103x8, STM32F103xB
Electrical characteristics
Figure 26. I2C bus AC waveforms and measurement circuit
VDD
VDD
4 .7 kΩ
4 .7 kΩ
100Ω
STM32F103xx
SDA
I2C bus
100Ω
SCL
S TART REPEATED
S TART
S TART
tsu(STA)
SDA
tf(SDA)
tr(SDA)
tw(SCKL)
th(STA)
SCL
tw(SCKH)
tsu(SDA)
tr(SCK)
tsu(STA:STO)
S TOP
th(SDA)
tsu(STO)
tf(SCK)
ai14149b
1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD.
Table 40.
SCL frequency (fPCLK1= 36 MHz.,VDD = 3.3 V)(1)(2)
I2C_CCR value
fSCL (kHz)
RP = 4.7 k
400
0x801E
300
0x8028
200
0x803C
100
0x00B4
50
0x0168
20
0x0384
2
1. RP = External pull-up resistance, fSCL = I C speed,
2. For speeds around 200 kHz, the tolerance on the achieved speed is of 5%. For other speed ranges, the
tolerance on the achieved speed 2%. These variations depend on the accuracy of the external
components used to design the application.
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Electrical characteristics
STM32F103x8, STM32F103xB
SPI interface characteristics
Unless otherwise specified, the parameters given in Table 41 are derived from tests
performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 9.
Refer to Section 5.3.12: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO).
Table 41.
Symbol
fSCK
1/tc(SCK)
SPI characteristics(1)
Parameter
Conditions
Min
Max
Unit
Master mode
18
Slave mode
18
8
ns
70
%
SPI clock frequency
MHz
tr(SCK)
tf(SCK)
SPI clock rise and fall
time
Capacitive load: C = 30 pF
DuCy(SCK)
SPI slave input clock
duty cycle
Slave mode
30
tsu(NSS)(2) NSS setup time
Slave mode
4tPCLK
th(NSS)(2)
Slave mode
2tPCLK
NSS hold time
(2)
Master mode, fPCLK = 36 MHz,
tw(SCKH)
SCK high and low time
tw(SCKL)(2)
presc = 4
tsu(MI) (2)
tsu(SI)(2)
th(MI)
Master mode
5
Slave mode
5
Master mode
5
Slave mode
4
60
Data input setup time
(2)
th(SI)(2)
50
Data input hold time
ns
ta(SO)(2)(3)
Data output access
time
Slave mode, fPCLK = 20 MHz
0
3tPCLK
tdis(SO)(2)(4)
Data output disable
time
Slave mode
2
10
tv(SO) (2)(1) Data output valid time
tv(MO)
(2)(1)
th(SO)(2)
th(MO)(2)
Data output valid time
Slave mode (after enable edge)
25
Master mode (after enable edge)
5
Slave mode (after enable edge)
15
Master mode (after enable edge)
2
Data output hold time
1. Remapped SPI1 characteristics to be determined.
2. Based on characterization, not tested in production.
3. Min time is for the minimum time to drive the output and the max time is for the maximum time to validate
the data.
4. Min time is for the minimum time to invalidate the output and the max time is for the maximum time to put
the data in Hi-Z
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STM32F103x8, STM32F103xB
Electrical characteristics
Figure 27. SPI timing diagram - slave mode and CPHA = 0
NSS input
tc(SCK)
th(NSS)
SCK Input
tSU(NSS)
CPHA= 0
CPOL=0
tw(SCKH)
tw(SCKL)
CPHA= 0
CPOL=1
tv(SO)
ta(SO)
MISO
OUT P UT
tr(SCK)
tf(SCK)
th(SO)
MS B O UT
BI T6 OUT
tdis(SO)
LSB OUT
tsu(SI)
MOSI
I NPUT
B I T1 IN
M SB IN
LSB IN
th(SI)
ai14134c
Figure 28. SPI timing diagram - slave mode and CPHA = 1(1)
NSS input
SCK Input
tSU(NSS)
CPHA=1
CPOL=0
CPHA=1
CPOL=1
tc(SCK)
tw(SCKH)
tw(SCKL)
tv(SO)
ta(SO)
MISO
OUT P UT
MS B O UT
tsu(SI)
MOSI
I NPUT
th(NSS)
th(SO)
BI T6 OUT
tr(SCK)
tf(SCK)
tdis(SO)
LSB OUT
th(SI)
B I T1 IN
M SB IN
LSB IN
ai14135
1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD.
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Electrical characteristics
STM32F103x8, STM32F103xB
Figure 29. SPI timing diagram - master mode(1)
High
NSS input
SCK Input
CPHA= 0
CPOL=0
SCK Input
tc(SCK)
CPHA=1
CPOL=0
CPHA= 0
CPOL=1
CPHA=1
CPOL=1
tsu(MI)
MISO
INP UT
tw(SCKH)
tw(SCKL)
tr(SCK)
tf(SCK)
MS BIN
BI T6 IN
LSB IN
th(MI)
MOSI
OUTUT
B I T1 OUT
M SB OUT
tv(MO)
LSB OUT
th(MO)
ai14136
1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD.
USB characteristics
The USB interface is USB-IF certified (Full Speed).
Table 42.
USB startup time
Symbol
tSTARTUP(1)
Parameter
USB transceiver startup time
1. Guaranteed by design, not tested in production.
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Max
Unit
1
µs
STM32F103x8, STM32F103xB
Table 43.
Electrical characteristics
USB DC electrical characteristics
Symbol
Parameter
Conditions
Min.(1)
Max.(1)
Unit
3.0(3)
3.6
V
V
Input levels
VDD
USB operating voltage(2)
VDI(4)
Differential input sensitivity
I(USBDP, USBDM)
0.2
VCM(4)
Differential common mode range
Includes VDI range
0.8
2.5
VSE(4)
Single ended receiver threshold
1.3
2.0
Output levels
VOL
Static output level low
RL of 1.5 k to 3.6 V(5)
VOH
Static output level high
RL of 15 k to VSS(5)
0.3
V
2.8
3.6
1. All the voltages are measured from the local ground potential.
2. To be compliant with the USB 2.0 full-speed electrical specification, the USBDP (D+) pin should be pulled
up with a 1.5 k resistor to a 3.0-to-3.6 V voltage range.
3. The STM32F103xx USB functionality is ensured down to 2.7 V but not the full USB electrical
characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range.
4. Guaranteed by design, not tested in production.
5. RL is the load connected on the USB drivers
Figure 30. USB timings: definition of data signal rise and fall time
Crossover
points
Differen tial
data lines
VCRS
VS S
Table 44.
tr
tf
ai14137
USB: Full-speed electrical characteristics(1)
Symbol
Parameter
Conditions
Min
Max
Unit
CL = 50 pF
4
20
ns
CL = 50 pF
4
20
ns
tr/tf
90
110
%
1.3
2.0
V
Driver characteristics
tr
tf
trfm
VCRS
Rise time(2)
(2)
Fall time
Rise/ fall time matching
Output signal crossover voltage
1. Guaranteed by design, not tested in production.
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
5.3.16
CAN (controller area network) interface
Refer to Section 5.3.12: I/O port characteristics for more details on the input/output alternate
function characteristics (CAN_TX and CAN_RX).
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Electrical characteristics
5.3.17
STM32F103x8, STM32F103xB
12-bit ADC characteristics
Unless otherwise specified, the parameters given in Table 45 are derived from tests
performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage
conditions summarized in Table 9.
Note:
It is recommended to perform a calibration after each power-up.
Table 45.
ADC characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDDA
Power supply
2.4
3.6
V
VREF+
Positive reference voltage
2.4
VDDA
V
IVREF
Current on the VREF input pin
220(1)
µA
fADC
ADC clock frequency
0.6
14
MHz
fS(2)
Sampling rate
0.05
1
MHz
823
kHz
17
1/fADC
VREF+
V
50
k
160(1)
fADC = 14 MHz
fTRIG(2)
External trigger frequency
VAIN(3)
Conversion voltage range
RAIN(2)
External input impedance
RADC(2)
Sampling switch resistance
1
k
CADC(2)
Internal sample and hold
capacitor
8
pF
tCAL(2)
Calibration time
0 (VSSA or VREFtied to ground)
See Equation 1 and
Table 46 for details
fADC = 14 MHz
tlat(2)
Injection trigger conversion
latency
fADC = 14 MHz
tlatr(2)
Regular trigger conversion
latency
fADC = 14 MHz
tS(2)
Sampling time
tSTAB(2)
Power-up time
tCONV(2)
Total conversion time
(including sampling time)
5.9
µs
83
1/fADC
0.214
3
(4)
µs
1/fADC
0.143
2
fADC = 14 MHz
µs
1/fADC
0.107
17.1
µs
1.5
239.5
1/fADC
1
µs
18
µs
0
fADC = 14 MHz
(4)
1
0
14 to 252 (tS for sampling +12.5 for
successive approximation)
1/fADC
1. Based on characterization, not tested in production.
2. Guaranteed by design, not tested in production.
3. In devices delivered in VFQFPN and LQFP packages, VREF+ is internally connected to VDDA and VREF- is internally
connected to VSSA. Devices that come in the TFBGA64 package have a VREF+ pin but no VREF- pin (VREF- is internally
connected to VSSA), see Table 5 and Figure 6.
4. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 45.
68/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Electrical characteristics
Equation 1: RAIN max formula:
TS
R AIN  ------------------------------------------------------------- – R ADC
N+2
f ADC  C ADC  ln  2

The formula above (Equation 1) is used to determine the maximum external impedance allowed for an
error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
Table 46.
RAIN max for fADC = 14 MHz(1)
Ts (cycles)
tS (µs)
RAIN max (k)
1.5
0.11
0.4
7.5
0.54
5.9
13.5
0.96
11.4
28.5
2.04
25.2
41.5
2.96
37.2
55.5
3.96
50
71.5
5.11
NA
239.5
17.1
NA
1. Based on characterization, not tested in production.
Table 47.
Symbol
ADC accuracy - limited test conditions(1) (2)
Parameter
ET
Total unadjusted error
EO
Offset error
EG
Gain error
ED
Differential linearity error
EL
Integral linearity error
Test conditions
Typ
Max(3)
fPCLK2 = 56 MHz,
fADC = 14 MHz, RAIN < 10 k,
VDDA = 3 V to 3.6 V
TA = 25 °C
Measurements made after
ADC calibration
±1.3
±2
±1
±1.5
±0.5
±1.5
±0.7
±1
±0.8
±1.5
Unit
LSB
1. ADC DC accuracy values are measured after internal calibration.
2. ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of the standard (nonrobust) analog input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to
standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in Section 5.3.12 does not
affect the ADC accuracy.
3. Based on characterization, not tested in production.
Doc ID 13587 Rev 11
69/92
Electrical characteristics
STM32F103x8, STM32F103xB
ADC accuracy(1) (2) (3)
Table 48.
Symbol
Parameter
ET
Test conditions
Total unadjusted error
EO
Offset error
EG
Gain error
ED
Differential linearity error
EL
Integral linearity error
fPCLK2 = 56 MHz,
fADC = 14 MHz, RAIN < 10 k,
VDDA = 2.4 V to 3.6 V
Measurements made after
ADC calibration
Typ
Max(4)
±2
±5
±1.5
±2.5
±1.5
±3
±1
±2
±1.5
±3
Unit
LSB
1. ADC DC accuracy values are measured after internal calibration.
2. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
3. ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of the standard (nonrobust) analog input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to
standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in Section 5.3.12 does not
affect the ADC accuracy.
4. Based on characterization, not tested in production.
Figure 31. ADC accuracy characteristics
V
V
[1LSBIDEAL = REF+ (or DDA depending on package)]
4096
4096
EG
4095
4094
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
4093
(2)
ET
(3)
7
(1)
6
5
4
EO
EL
3
ED
2
1 LSBIDEAL
1
0
1
VSSA
70/92
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
2
3
4
5
6
7
4093 4094 4095 4096
VDDA
Doc ID 13587 Rev 11
ai14395b
STM32F103x8, STM32F103xB
Electrical characteristics
Figure 32. Typical connection diagram using the ADC
VDD
RAIN(1)
VAIN
VT
0.6 V
AINx
Cparasitic
VT
0.6 V
IL±1 µA
STM32F103xx
Sample and hold ADC
converter
RADC(1)
12-bit
converter
CADC(1)
ai14150c
1. Refer to Table 45 for the values of RAIN, RADC and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 7 pF). A high Cparasitic value will downgrade conversion accuracy. To remedy
this, fADC should be reduced.
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 33 or Figure 34,
depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be
ceramic (good quality). They should be placed them as close as possible to the chip.
Figure 33. Power supply and reference decoupling (VREF+ not connected to VDDA)
STM32F103xx
VREF+
(see note 1)
1 µF // 10 nF
VDDA
1 µF // 10 nF
VSSA /VREF–
(see note 1)
ai14388b
1. VREF+ and VREF– inputs are available only on 100-pin packages.
Doc ID 13587 Rev 11
71/92
Electrical characteristics
STM32F103x8, STM32F103xB
Figure 34. Power supply and reference decoupling (VREF+ connected to VDDA)
STM32F103xx
VREF+/VDDA
(See note 1)
1 µF // 10 nF
VREF–/VSSA
(See note 1)
ai14389
1. VREF+ and VREF– inputs are available only on 100-pin packages.
5.3.18
Temperature sensor characteristics
Table 49.
TS characteristics
Symbol
TL(1)
Avg_Slope(1)
V25(1)
tSTART(2)
TS_temp(3)(2)
Parameter
Min
VSENSE linearity with temperature
Typ
Max
Unit
1
2
°C
Average slope
4.0
4.3
4.6
mV/°C
Voltage at 25 °C
1.34
1.43
1.52
V
10
µs
17.1
µs
Startup time
4
ADC sampling time when reading the
temperature
1. Based on characterization, not tested in production.
2. Guaranteed by design, not tested in production.
3. Shortest sampling time can be determined in the application by multiple iterations.
72/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Package characteristics
6
Package characteristics
6.1
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Doc ID 13587 Rev 11
73/92
Package characteristics
STM32F103x8, STM32F103xB
Figure 35. VFQFPN36 6 x 6 mm, 0.5 mm pitch,
package outline(1)
Figure 36. Recommended footprint
(dimensions in mm)(1)(2)(3)
Seating plane
C
ddd
C
1.00
4.30
A2 A
27
19
A1
A3
E2
28
18
b
27
18
28
0.50
4.10
19
4.30
4.10
4.80
4.80
e
D2
D
36
10
9
1
36
0.75
0.30
10
6.30
ai14870b
Pin # 1 ID
R = 0.20
1
9
L
E
ZR_ME
1. Drawing is not to scale.
2. The back-side pad is not internally connected to the VSS or VDD power pads.
3. There is an exposed die pad on the underside of the VFQFPN package. It should be soldered to the PCB. All leads should
also be soldered to the PCB. It is recommended to connect it to VSS.
Table 50.
VFQFPN36 6 x 6 mm, 0.5 mm pitch, package mechanical data
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
0.800
0.900
1.000
0.0315
0.0354
0.0394
A1
0.020
0.050
0.0008
0.0020
A2
0.650
1.000
0.0256
0.0394
A3
0.250
A
0.0098
b
0.180
0.230
0.300
0.0071
0.0091
0.0118
D
5.875
6.000
6.125
0.2313
0.2362
0.2411
D2
1.750
3.700
4.250
0.0689
0.1457
0.1673
E
5.875
6.000
6.125
0.2313
0.2362
0.2411
E2
1.750
3.700
4.250
0.0689
0.1457
0.1673
e
0.450
0.500
0.550
0.0177
0.0197
0.0217
L
0.350
0.550
0.750
0.0138
0.0217
0.0295
ddd
0.080
0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
74/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Package characteristics
Figure 37. LFBGA100 - 10 x 10 mm low profile fine pitch ball grid array package
outline
1. Drawing is not to scale.
Table 51.
LFBGA100 - 10 x 10 mm low profile fine pitch ball grid array package
mechanical data
inches(1)
millimeters
Symbol
Min
Typ
A
A1
Max
Min
Typ
1.700
Max
0.0669
0.270
0.0106
A2
1.085
0.0427
A3
0.30
0.0118
A4
0.80
0.0315
b
0.45
0.50
0.55
0.0177
0.0197
0.0217
D
9.85
10.00
10.15
0.3878
0.3937
0.3996
D1
E
7.20
9.85
10.00
0.2835
10.15
0.3878
0.3937
E1
7.20
0.2835
e
0.80
0.0315
F
1.40
0.0551
0.3996
ddd
0.12
0.0047
eee
0.15
0.0059
fff
0.08
0.0031
N (number of balls)
100
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Doc ID 13587 Rev 11
75/92
Package characteristics
STM32F103x8, STM32F103xB
Figure 38. Recommended PCB design rules (0.80/0.75 mm pitch BGA)
Dpad
0.37 mm
0.52 mm typ. (depends on solder
Dsm
mask registration tolerance
Solder paste 0.37 mm aperture diameter
– Non solder mask defined pads are recommended
– 4 to 6 mils screen print
Dpad
Dsm
76/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Package characteristics
Figure 39. LQFP100, 14 x 14 mm 100-pin low-profile
quad flat package outline(1)
Figure 40. Recommended footprint(1)(2)
0.25 mm
0.10 inch
GAGE PLANE
75
k
51
D
L
D1
76
50
0.5
L1
D3
51
75
C
0.3
76
50
16.7
14.3
b
E3 E1 E
100
26
1.2
1
100
26
Pin 1
1
identification
25
12.3
25
ccc
C
16.7
e
A1
ai14906
A2
A
SEATING PLANE
C
1L_ME
1. Drawing is not to scale.
2. Dimensions are in millimeters.
Table 52.
LQPF100, 14 x 14 mm 100-pin low-profile quad flat package mechanical data
inches(1)
millimeters
Symbol
Min
Typ
A
Max
Min
Typ
1.6
A1
0.05
A2
1.35
b
0.17
c
0.09
D
15.8
D1
13.8
D3
Max
0.063
0.15
0.002
1.4
1.45
0.0531
0.0551
0.0571
0.22
0.27
0.0067
0.0087
0.0106
0.2
0.0035
16
16.2
0.622
0.6299
0.6378
14
14.2
0.5433
0.5512
0.5591
12
0.0059
0.0079
0.4724
E
15.8
16
16.2
0.622
0.6299
0.6378
E1
13.8
14
14.2
0.5433
0.5512
0.5591
E3
12
e
L
0.5
0.45
L1
k
ccc
0.4724
0.6
0.0197
0.75
0.0177
1
0.0°
3.5°
0.0236
0.0295
0.0394
7.0°
0.08
0.0°
3.5°
7.0°
0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Doc ID 13587 Rev 11
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Package characteristics
STM32F103x8, STM32F103xB
Figure 41. LQFP64, 10 x 10 mm, 64-pin low-profile quad
flat package outline(1)
Figure 42. Recommended
footprint(1)(2)
A
A2
48
33
A1
0.3
49
E
32
0.5
b
E1
12.7
10.3
10.3
e
64
17
1.2
1
16
7.8
D1
c
12.7
L1
D
ai14909
L
ai14398b
1. Drawing is not to scale.
2. Dimensions are in millimeters.
Table 53.
LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package mechanical data
inches(1)
millimeters
Symbol
Min
Typ
A
Max
Min
1.60
A1
0.05
A2
1.35
b
0.17
c
0.09
Max
0.0630
0.15
0.0020
0.0059
1.40
1.45
0.0531
0.0551
0.0571
0.22
0.27
0.0067
0.0087
0.0106
0.20
0.0035
0.0079
D
12.00
0.4724
D1
10.00
0.3937
E
12.00
0.4724
E1
10.00
0.3937
e
0.50
0.0197

0°
3.5°
7°
0°
3.5°
7°
L
0.45
0.60
0.75
0.0177
0.0236
0.0295
L1
1.00
0.0394
Number of pins
N
64
1. Values in inches are converted from mm and rounded to 4 decimal digits.
78/92
Typ
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Package characteristics
Figure 43. TFBGA64 - 8 x 8 active ball array, 5 x 5 mm, 0.5 mm pitch, package outline
B
D
D1
A
A
e
A1
F
H
F
G
F
E
E1
E
D
C
B
A
e
1
2
3
A1 ball pad corner
A3
4
5
6
7
8
Øb (64 balls)
A4
A2
Seating
C
plane
Bottom view
ME_R8
1. Drawing is not to scale.
Table 54.
TFBGA64 - 8 x 8 active ball array, 5 x 5 mm, 0.5 mm pitch, package
mechanical data
inches(1)
millimeters
Symbol
Min
Typ
A
A1
Max
Min
Typ
1.200
0.150
Max
0.0472
0.0059
A2
0.785
0.0309
A3
0.200
0.0079
A4
0.600
0.0236
b
0.250
0.300
0.350
0.0098
0.0118
0.0138
D
4.850
5.000
5.150
0.1909
0.1969
0.2028
D1
E
3.500
4.850
5.000
0.1378
5.150
0.1909
0.1969
E1
3.500
0.1378
e
0.500
0.0197
F
0.750
0.0295
ddd
0.080
0.0031
eee
0.150
0.0059
fff
0.050
0.0020
0.2028
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Doc ID 13587 Rev 11
79/92
Package characteristics
STM32F103x8, STM32F103xB
Figure 44. Recommended PCB design rules for pads (0.5 mm pitch BGA)
Pitch
0.5 mm
D pad
0.27 mm
Dsm
0.35 mm typ (depends on
the soldermask registration
tolerance)
Solder paste
0.27 mm aperture diameter
Dpad
Dsm
ai15495
1. Non solder mask defined (NSMD) pads are recommended
2. 4 to 6 mils solder paste screen printing process
80/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Package characteristics
Figure 45. LQFP48, 7 x 7 mm, 48-pin low-profile quad flat
package outline(1)
Figure 46. Recommended
footprint(1)(2)
Seating plane
C
A A2
A1
c
b
ccc
0.50
0.25 mm
Gage plane
C
1.20
D
36
0.30
25
37
D1
24
k
D3
A1
L
25
36
9.70
0.20
7.30
5.80
L1
7.30
24
37
48
13
12
1
1.20
5.80
E3 E1
E
9.70
ai14911b
48
Pin 1
identification
13
1
12
5B_ME
1. Drawing is not to scale.
2. Dimensions are in millimeters.
Table 55.
LQFP48, 7 x 7 mm, 48-pin low-profile quad flat package mechanical data
inches(1)
millimeters
Symbol
Min
Typ
A
Max
Min
Typ
1.600
A1
0.050
A2
1.350
b
0.170
c
0.090
D
8.800
D1
6.800
D3
Max
0.0630
0.150
0.0020
1.400
1.450
0.0531
0.0551
0.0571
0.220
0.270
0.0067
0.0087
0.0106
0.200
0.0035
9.000
9.200
0.3465
0.3543
0.3622
7.000
7.200
0.2677
0.2756
0.2835
5.500
0.0059
0.0079
0.2165
E
8.800
9.000
9.200
0.3465
0.3543
0.3622
E1
6.800
7.000
7.200
0.2677
0.2756
0.2835
E3
5.500
0.2165
e
0.500
0.0197
L
0.450
L1
k
ccc
0.600
0.750
0.0177
1.000
0°
3.5°
0.0236
0.0295
0.0394
7°
0.080
0°
3.5°
7°
0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Doc ID 13587 Rev 11
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Package characteristics
6.2
STM32F103x8, STM32F103xB
Thermal characteristics
The maximum chip junction temperature (TJmax) must never exceed the values given in
Table 9: General operating conditions on page 35.
The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max × JA)
Where:
●
TA max is the maximum ambient temperature in C,
●
JA is the package junction-to-ambient thermal resistance, in C/W,
●
PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
●
PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = (VOL × IOL) + ((VDD – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.
Table 56.
Package thermal characteristics
Symbol
JA
6.2.1
Parameter
Value
Thermal resistance junction-ambient
LFBGA100 - 10 × 10 mm / 0.8 mm pitch
44
Thermal resistance junction-ambient
LQFP100 - 14 × 14 mm / 0.5 mm pitch
46
Thermal resistance junction-ambient
LQFP64 - 10 × 10 mm / 0.5 mm pitch
45
Unit
°C/W
Thermal resistance junction-ambient
TFBGA64 - 5 × 5 mm / 0.5 mm pitch
65
Thermal resistance junction-ambient
LQFP48 - 7 x 7 mm / 0.5 mm pitch
55
Thermal resistance junction-ambient
VFQFPN 36 - 6 × 6 mm / 0.5 mm pitch
18
Reference document
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.
82/92
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
6.2.2
Package characteristics
Selecting the product temperature range
When ordering the microcontroller, the temperature range is specified in the ordering
information scheme shown in Table 57: Ordering information scheme.
Each temperature range suffix corresponds to a specific guaranteed ambient temperature at
maximum dissipation and, to a specific maximum junction temperature.
As applications do not commonly use the STM32F103xx at maximum dissipation, it is useful
to calculate the exact power consumption and junction temperature to determine which
temperature range will be best suited to the application.
The following examples show how to calculate the temperature range needed for a given
application.
Example 1: High-performance application
Assuming the following application conditions:
Maximum ambient temperature TAmax = 82 °C (measured according to JESD51-2),
IDDmax = 50 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V and maximum 8 I/Os used at the same time in output
at low level with IOL = 20 mA, VOL= 1.3 V
PINTmax = 50 mA × 3.5 V= 175 mW
PIOmax = 20 × 8 mA × 0.4 V + 8 × 20 mA × 1.3 V = 272 mW
This gives: PINTmax = 175 mW and PIOmax = 272 mW:
PDmax = 175 + 272 = 447 mW
Thus: PDmax = 447 mW
Using the values obtained in Table 56 TJmax is calculated as follows:
–
For LQFP100, 46 °C/W
TJmax = 82 °C + (46 °C/W × 447 mW) = 82 °C + 20.6 °C = 102.6 °C
This is within the range of the suffix 6 version parts (–40 < TJ < 105 °C).
In this case, parts must be ordered at least with the temperature range suffix 6 (see
Table 57: Ordering information scheme).
Example 2: High-temperature application
Using the same rules, it is possible to address applications that run at high ambient
temperatures with a low dissipation, as long as junction temperature TJ remains within the
specified range.
Assuming the following application conditions:
Maximum ambient temperature TAmax = 115 °C (measured according to JESD51-2),
IDDmax = 20 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V
PINTmax = 20 mA × 3.5 V= 70 mW
PIOmax = 20 × 8 mA × 0.4 V = 64 mW
This gives: PINTmax = 70 mW and PIOmax = 64 mW:
PDmax = 70 + 64 = 134 mW
Thus: PDmax = 134 mW
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Package characteristics
STM32F103x8, STM32F103xB
Using the values obtained in Table 56 TJmax is calculated as follows:
–
For LQFP100, 46 °C/W
TJmax = 115 °C + (46 °C/W × 134 mW) = 115 °C + 6.2 °C = 121.2 °C
This is within the range of the suffix 7 version parts (–40 < TJ < 125 °C).
In this case, parts must be ordered at least with the temperature range suffix 7 (see
Table 57: Ordering information scheme).
Figure 47. LQFP100 PD max vs. TA
700
PD (mW)
600
500
Suffix 6
400
Suffix 7
300
200
100
0
65
75
85
95
105
115
TA (°C)
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135
STM32F103x8, STM32F103xB
7
Ordering information scheme
Ordering information scheme
Table 57.
Ordering information scheme
Example:
STM32
F 103 C 8
T
7 xxx
Device family
STM32 = ARM-based 32-bit microcontroller
Product type
F = general-purpose
Device subfamily
103 = performance line
Pin count
T = 36 pins
C = 48 pins
R = 64 pins
V = 100 pins
Flash memory size(1)
8 = 64 Kbytes of Flash memory
B = 128 Kbytes of Flash memory
Package
H = BGA
T = LQFP
U = VFQFPN
Temperature range
6 = Industrial temperature range, –40 to 85 °C.
7 = Industrial temperature range, –40 to 105 °C.
Options
xxx = programmed parts
TR = tape and real
1. Although STM32F103x6 devices are not described in this datasheet, orderable part numbers that do not
show the A internal code after temperature range code 6 or 7 should be referred to this datasheet for the
electrical characteristics. The low-density datasheet only covers STM32F103x6 devices that feature the
A code.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.
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Revision history
8
STM32F103x8, STM32F103xB
Revision history
Table 58.
Document revision history
Date
Revision
01-jun-2007
1
Initial release.
2
Flash memory size modified in Note 8, Note 5, Note 7, Note 9 and
BGA100 pins added to Table 5: Medium-density STM32F103xx pin
definitions. Figure 3: STM32F103xx performance line LFBGA100
ballout added.
THSE changed to TLSE in Figure 21: Low-speed external clock source
AC timing diagram. VBAT ranged modified in Power supply schemes.
tSU(LSE) changed to tSU(HSE) in Table 22: HSE 4-16 MHz oscillator
characteristics. IDD(HSI) max value added to Table 24: HSI oscillator
characteristics.
Sample size modified and machine model removed in Electrostatic
discharge (ESD).
Number of parts modified and standard reference updated in Static
latch-up. 25 °C and 85 °C conditions removed and class name modified
in Table 33: Electrical sensitivities. RPU and RPD min and max values
added to Table 34: I/O static characteristics. RPU min and max values
added to Table 37: NRST pin characteristics.
Figure 26: I2C bus AC waveforms and measurement circuit and
Figure 25: Recommended NRST pin protection corrected.
Notes removed below Table 9, Table 37, Table 43.
IDD typical values changed in Table 11: Maximum current consumption
in Run and Sleep modes. Table 38: TIMx characteristics modified.
tSTAB, VREF+ value, tlat and fTRIG added to Table 45: ADC
characteristics.
In Table 29: Flash memory endurance and data retention, typical
endurance and data retention for TA = 85 °C added, data retention for
TA = 25 °C removed.
VBG changed to VREFINT in Table 12: Embedded internal reference
voltage. Document title changed. Controller area network (CAN)
section modified.
Figure 12: Power supply scheme modified.
Features on page 1 list optimized. Small text changes.
20-Jul-2007
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Changes
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Table 58.
Revision history
Document revision history (continued)
Date
18-Oct-2007
Revision
Changes
3
STM32F103CBT6, STM32F103T6 and STM32F103T8 root part
numbers added (see Table 2: STM32F103xx medium-density device
features and peripheral counts)
VFQFPN36 package added (see Section 6: Package characteristics).
All packages are ECOPACK® compliant. Package mechanical data
inch values are calculated from mm and rounded to 4 decimal digits
(see Section 6: Package characteristics).
Table 5: Medium-density STM32F103xx pin definitions updated and
clarified.
Table 26: Low-power mode wakeup timings updated.
TA min corrected in Table 12: Embedded internal reference voltage.
Note 2 added below Table 22: HSE 4-16 MHz oscillator characteristics.
VESD(CDM) value added to Table 32: ESD absolute maximum ratings.
Note 3 added and VOH parameter description modified in Table 35:
Output voltage characteristics.
Note 1 modified under Table 36: I/O AC characteristics.
Equation 1 and Table 46: RAIN max for fADC = 14 MHz added to
Section 5.3.17: 12-bit ADC characteristics.
VAIN, tS max, tCONV, VREF+ min and tlat max modified, notes modified
and tlatr added in Table 45: ADC characteristics.
Figure 31: ADC accuracy characteristics updated. Note 1 modified
below Figure 32: Typical connection diagram using the ADC.
Electrostatic discharge (ESD) on page 56 modified.
Number of TIM4 channels modified in Figure 1: STM32F103xx
performance line block diagram.
Maximum current consumption Table 13, Table 14 and Table 15
updated. Vhysmodified in Table 34: I/O static characteristics.
Table 48: ADC accuracy updated. tVDD modified in Table 10: Operating
conditions at power-up / power-down. VFESD value added in Table 30:
EMS characteristics.
Values corrected, note 2 modified and note 3 removed in Table 26:
Low-power mode wakeup timings.
Table 16: Typical and maximum current consumptions in Stop and
Standby modes: Typical values added for VDD/VBAT = 2.4 V, Note 2
modified, Note 2 added.
Table 21: Typical current consumption in Standby mode added. On-chip
peripheral current consumption on page 47 added.
ACCHSI values updated in Table 24: HSI oscillator characteristics.
Vprog added to Table 28: Flash memory characteristics.
Upper option byte address modified in Figure 9: Memory map.
Typical fLSI value added in Table 25: LSI oscillator characteristics and
internal RC value corrected from 32 to 40 kHz in entire document.
TS_temp added to Table 49: TS characteristics. NEND modified in
Table 29: Flash memory endurance and data retention.
TS_vrefint added to Table 12: Embedded internal reference voltage.
Handling of unused pins specified in General input/output
characteristics on page 57. All I/Os are CMOS and TTL compliant.
Figure 33: Power supply and reference decoupling (VREF+ not
connected to VDDA) modified.
tJITTER and fVCO removed from Table 27: PLL characteristics.
Appendix A: Important notes on page 81 added.
Added Figure 14, Figure 15, Figure 17 and Figure 19.
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Revision history
Table 58.
STM32F103x8, STM32F103xB
Document revision history (continued)
Date
22-Nov-2007
88/92
Revision
Changes
4
Document status promoted from preliminary data to datasheet.
The STM32F103xx is USB certified. Small text changes.
Power supply schemes on page 13 modified. Number of
communication peripherals corrected for STM32F103Tx and number of
GPIOs corrected for LQFP package in Table 2: STM32F103xx mediumdensity device features and peripheral counts.
Main function and default alternate function modified for PC14 and
PC15 in, Note 6 added and Remap column added in Table 5: Mediumdensity STM32F103xx pin definitions.
VDD–VSS ratings and Note 1 modified in Table 6: Voltage
characteristics, Note 1 modified in Table 7: Current characteristics.
Note 1 and Note 2 added in Table 11: Embedded reset and power
control block characteristics.
IDD value at 72 MHz with peripherals enabled modified in Table 14:
Maximum current consumption in Run mode, code with data
processing running from RAM.
IDD value at 72 MHz with peripherals enabled modified in Table 15:
Maximum current consumption in Sleep mode, code running from
Flash or RAM on page 41.
IDD_VBAT typical value at 2.4 V modified and IDD_VBAT maximum values
added in Table 16: Typical and maximum current consumptions in Stop
and Standby modes. Note added in Table 17 on page 45 and Table 18
on page 46. ADC1 and ADC2 consumption and notes modified in
Table 19: Peripheral current consumption.
tSU(HSE) and tSU(LSE) conditions modified in Table 22 and Table 23,
respectively.
Maximum values removed from Table 26: Low-power mode wakeup
timings. tRET conditions modified in Table 29: Flash memory endurance
and data retention. Figure 12: Power supply scheme corrected.
Figure 18: Typical current consumption in Stop mode with regulator in
Low-power mode versus temperature at VDD = 3.3 V and 3.6 V added.
Note removed below Figure 27: SPI timing diagram - slave mode and
CPHA = 0. Note added below Figure 28: SPI timing diagram - slave
mode and CPHA = 1(1).
Details on unused pins removed from General input/output
characteristics on page 57.
Table 41: SPI characteristics updated. Table 42: USB startup time
added. VAIN, tlat and tlatr modified, note added and Ilkg removed in
Table 45: ADC characteristics. Test conditions modified and note added
in Table 48: ADC accuracy. Note added below Table 46 and Table 49.
Inch values corrected in Table 52: LQPF100, 14 x 14 mm 100-pin lowprofile quad flat package mechanical data, Table 53: LQFP64, 10 x 10
mm, 64-pin low-profile quad flat package mechanical data and
Table 55: LQFP48, 7 x 7 mm, 48-pin low-profile quad flat package
mechanical data.
JAvalue for VFQFPN36 package added in Table 56: Package thermal
characteristics
Order codes replaced by Section 7: Ordering information scheme.
MCU ‘s operating conditions modified in Typical current consumption
on page 44. Avg_Slope and V25 modified in Table 49: TS
characteristics. I2C interface characteristics on page 62 modified.
Impedance size specified in A.4: Voltage glitch on ADC input 0 on
page 81.
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Table 58.
Revision history
Document revision history (continued)
Date
14-Mar-2008
21-Mar-2008
22-May-2008
Revision
Changes
5
Figure 2: Clock tree on page 20 added.
Maximum TJ value given in Table 8: Thermal characteristics on
page 35.
CRC feature added (see CRC (cyclic redundancy check) calculation
unit on page 9 and Figure 9: Memory map on page 31 for address).
IDD modified in Table 16: Typical and maximum current consumptions in
Stop and Standby modes.
ACCHSI modified in Table 24: HSI oscillator characteristics on page 52,
note 2 removed.
PD, TA and TJ added, tprog values modified and tprog description clarified
in Table 28: Flash memory characteristics on page 53.
tRET modified in Table 29: Flash memory endurance and data retention.
VNF(NRST) unit corrected in Table 37: NRST pin characteristics on
page 60.
Table 41: SPI characteristics on page 64 modified.
IVREF added to Table 45: ADC characteristics on page 68.
Table 47: ADC accuracy - limited test conditions added. Table 48: ADC
accuracy modified.
LQFP100 package specifications updated (see Section 6: Package
characteristics on page 73).
Recommended LQFP100, LQFP 64, LQFP48 and VFQFPN36
footprints added (see Figure 40, Figure 42, Figure 46 and Figure 36).
Section 6.2: Thermal characteristics on page 82 modified,
Section 6.2.1 and Section 6.2.2 added.
Appendix A: Important notes on page 81 removed.
6
Small text changes. Figure 9: Memory map clarified.
In Table 29: Flash memory endurance and data retention:
– NEND tested over the whole temperature range
– cycling conditions specified for tRET
– tRET min modified at TA = 55 °C
V25, Avg_Slope and TL modified in Table 49: TS characteristics.
CRC feature removed.
7
CRC feature added back. Small text changes. Section 1: Introduction
modified. Section 2.2: Full compatibility throughout the family added.
IDD at TA max = 105 °C added to Table 16: Typical and maximum
current consumptions in Stop and Standby modes on page 42.
IDD_VBAT removed from Table 21: Typical current consumption in
Standby mode on page 47.
Values added to Table 40: SCL frequency (fPCLK1= 36 MHz.,VDD =
3.3 V) on page 63.
Figure 27: SPI timing diagram - slave mode and CPHA = 0 on page 65
modified. Equation 1 corrected.
tRET at TA = 105 °C modified in Table 29: Flash memory endurance and
data retention on page 54.
VUSB added to Table 43: USB DC electrical characteristics on page 67.
Figure 47: LQFP100 PD max vs. TA on page 84 modified.
Axx option added to Table 57: Ordering information scheme on
page 85.
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Revision history
Table 58.
STM32F103x8, STM32F103xB
Document revision history (continued)
Date
21-Jul-2008
22-Sep-2008
90/92
Revision
Changes
8
Power supply supervisor updated and VDDA added to Table 9: General
operating conditions.
Capacitance modified in Figure 12: Power supply scheme on page 33.
Table notes revised in Section 5: Electrical characteristics.
Table 16: Typical and maximum current consumptions in Stop and
Standby modes modified.
Data added to Table 16: Typical and maximum current consumptions in
Stop and Standby modes and Table 21: Typical current consumption in
Standby mode removed.
fHSE_ext modified in Table 20: High-speed external user clock
characteristics on page 48. fPLL_IN modified in Table 27: PLL
characteristics on page 53.
Minimum SDA and SCL fall time value for Fast mode removed from
Table 39: I2C characteristics on page 62, note 1 modified.
th(NSS) modified in Table 41: SPI characteristics on page 64 and
Figure 27: SPI timing diagram - slave mode and CPHA = 0 on page 65.
CADC modified in Table 45: ADC characteristics on page 68 and
Figure 32: Typical connection diagram using the ADC modified.
Typical TS_temp value removed from Table 49: TS characteristics on
page 72.
LQFP48 package specifications updated (see Table 55 and Table 46),
Section 6: Package characteristics revised.
Axx option removed from Table 57: Ordering information scheme on
page 85.
Small text changes.
9
STM32F103x6 part numbers removed (see Table 57: Ordering
information scheme). Small text changes.
General-purpose timers (TIMx) and Advanced-control timer (TIM1) on
page 15 updated.
Notes updated in Table 5: Medium-density STM32F103xx pin
definitions on page 26.
Note 2 modified below Table 6: Voltage characteristics on page 34,
|VDDx| min and |VDDx| min removed.
Measurement conditions specified in Section 5.3.5: Supply current
characteristics on page 38.
IDD in standby mode at 85 °C modified in Table 16: Typical and
maximum current consumptions in Stop and Standby modes on
page 42.
General input/output characteristics on page 57 modified.
fHCLK conditions modified in Table 30: EMS characteristics on page 55.
JA and pitch value modified for LFBGA100 package in Table 56:
Package thermal characteristics. Small text changes.
Doc ID 13587 Rev 11
STM32F103x8, STM32F103xB
Table 58.
Revision history
Document revision history (continued)
Date
23-Apr-2009
22-Sep-2009
Revision
Changes
10
I/O information clarified on page 1.
Figure 3: STM32F103xx performance line LFBGA100 ballout modified.
Figure 9: Memory map modified. Table 4: Timer feature comparison
added.
PB4, PB13, PB14, PB15, PB3/TRACESWO moved from Default
column to Remap column in Table 5: Medium-density STM32F103xx
pin definitions.
PD for LFBGA100 corrected in Table 9: General operating conditions.
Note modified in Table 13: Maximum current consumption in Run
mode, code with data processing running from Flash and Table 15:
Maximum current consumption in Sleep mode, code running from
Flash or RAM.
Table 20: High-speed external user clock characteristics and Table 21:
Low-speed external user clock characteristics modified.
Figure 18 shows a typical curve (title modified). ACCHSI max values
modified in Table 24: HSI oscillator characteristics.
TFBGA64 package added (see Table 54 and Table 43). Small text
changes.
11
Note 5 updated and Note 4 added in Table 5: Medium-density
STM32F103xx pin definitions.
VRERINT and TCoeff added to Table 12: Embedded internal reference
voltage. IDD_VBAT value added to Table 16: Typical and maximum
current consumptions in Stop and Standby modes. Figure 16: Typical
current consumption on VBAT with RTC on versus temperature at
different VBAT values added.
fHSE_ext min modified in Table 20: High-speed external user clock
characteristics.
CL1 and CL2 replaced by C in Table 22: HSE 4-16 MHz oscillator
characteristics and Table 23: LSE oscillator characteristics (fLSE =
32.768 kHz), notes modified and moved below the tables. Table 24: HSI
oscillator characteristics modified. Conditions removed from Table 26:
Low-power mode wakeup timings.
Note 1 modified below Figure 22: Typical application with an 8 MHz
crystal.
IEC 1000 standard updated to IEC 61000 and SAE J1752/3 updated to
IEC 61967-2 in Section 5.3.10: EMC characteristics on page 54.
Jitter added to Table 27: PLL characteristics.
Table 41: SPI characteristics modified.
CADC and RAIN parameters modified in Table 45: ADC characteristics.
RAIN max values modified in Table 46: RAIN max for fADC = 14 MHz.
Figure 37: LFBGA100 - 10 x 10 mm low profile fine pitch ball grid array
package outline updated.
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STM32F103x8, STM32F103xB
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