STB11NM80, STF11NM80 STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 Features Type VDSS RDS(on) max RDS(on)*Qg ID 3 STB11NM80 1 3 2 D²PAK 1 STF11NM80 800 V STP11NM80 < 0.40 Ω 14Ω*nC TO-247 11 A STW11NM80 ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry 3 3 1 1 2 2 TO-220FP TO-220 Application ■ Figure 1. Switching applications Internal schematic diagram Description $ The MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STB11NM80 B11NM80 D²PAK Tape and reel STF11NM80 F11NM80 TO-220FP STP11NM80 P11NM80 TO-220 STW11NM80 W11NM80 TO-247 March 2010 Doc ID 9241 Rev 10 Tube 1/17 www.st.com 17 Contents STB/F/P/W11NM80 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 Doc ID 9241 Rev 10 STB/F/P/W11NM80 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, D²PAK, TO-247 VDS Drain-source voltage (VGS = 0) 800 VGS Gate-source voltage ±30 Unit TO-220FP V V (1) ID Drain current (continuous) at TC = 25 °C 11 11 ID Drain current (continuous) at TC=100 °C 8 8 (1) IDM (2) PTOT VISO TJ Tstg 44 (1) A A Drain current (pulsed) 44 Total dissipation at TC = 25 °C 150 35 W Derating factor 1.2 0.28 W/°C 2500 V Insulation withstand voltage (DC) Operating junction temperature Storage temperature -65 to 150 A °C 1. Limited only by the maximum temperature allowed 2. Pulse width limited by safe operating area Table 3. Thermal data Value Symbol Rthj-case Parameter Thermal resistance junction-case max Unit TO-220, D²PAK, TO-247 TO-220FP 0.83 3.6 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit Table 4. Symbol Avalanche characteristics Parameter IAS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 2.5 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAR, VDD=50 V) 400 mJ Doc ID 9241 Rev 10 3/17 Electrical characteristics 2 STB/F/P/W11NM80 Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 dv/dt (1) Drain source voltage slope VDD = 640 V, ID = 11 A, VGS = 10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±30 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 5.5 A 0.35 0.40 Ω Min. Typ. Max. Unit 800 V 30 3 V/ns 1. Characteristic value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS > ID(on) x RDS(on)max, ID= 7.5 A - 8 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 1630 750 30 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=640 V, ID = 11 A VGS =10 V Figure 10 - 43.6 11.6 21 - nC nC nC Rg Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain - 2.7 - Ω Turn-on delay time Rise time Turn-off delay time Fall time VDD=400 V, ID= 5.5 A, RG=4.7 Ω, VGS=10 V Figure 17 - 22 17 46 15 - ns ns ns ns td(on) tr td(off) tf 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 Table 7. Symbol ISD Source drain diode Parameter Test conditions Min. Typ. Source-drain current Max. Unit 11 A 44 A 0.86 V - (1) Source-drain current (pulsed) (2) Forward on voltage ISD=11 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, di/dt = 100 A/µs, VDD= 50 V - 612 7.22 23.6 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, di/dt = 100 A/µs, VDD= 50 V, Tj=150 °C - 970 11.25 23.2 ns µC A ISDM VSD Electrical characteristics trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 9241 Rev 10 5/17 Electrical characteristics STB/F/P/W11NM80 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, TO-247 Figure 3. Thermal impedance for TO-220, D²PAK, TO-247 Figure 5. Thermal impedance for TO-220FP Figure 7. Output characteristics AM03328v1 ID (A) n) (o 10µs 100µs DS Op Lim era ite tion d by in th m is ax ar R e a is 1µs 10 1 1ms Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220FP ID (A) AM03329v1 10 1 1µs is ea ) ar S(on is D th R in ax n io y m t b ra pe ed O imit L 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 Figure 6. 6/17 1 10 100 Output characteristics VDS(V) Doc ID 9241 Rev 10 STB/F/P/W11NM80 Figure 8. Electrical characteristics Transfer characteristics Figure 9. Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Static drain-source on resistance Doc ID 9241 Rev 10 7/17 Electrical characteristics STB/F/P/W11NM80 Figure 14. Source-drain diode forward characteristics Figure 15. Normalized on resistance vs temperature Figure 16. Normalized BVDSS vs temperature 8/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 9241 Rev 10 10% AM01473v1 9/17 Package mechanical data 4 STB/F/P/W11NM80 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 Table 8. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 23. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 9241 Rev 10 11/17 Package mechanical data STB/F/P/W11NM80 TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S 12/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ Max. 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 øR 4.50 3.65 5.50 S 5.50 Doc ID 9241 Rev 10 13/17 Package mechanical data STB/F/P/W11NM80 D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.409 0.208 0.624 0.106 0.110 0.055 0.069 0.016 0079457_M 14/17 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.4 0° Typ Doc ID 9241 Rev 10 8° STB/F/P/W11NM80 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 Doc ID 9241 Rev 10 15/17 Revision history 6 STB/F/P/W11NM80 Revision history Table 9. 16/17 Document revision history Date Revision Changes 30-Sep-2004 4 Preliminary version 26-Nov-2005 5 Complete version 07-Apr-2006 6 Modified value on Figure 8 15-May-2006 7 New dv/dt value on Table 5 20-Jul-2006 8 The document has been reformatted 20-Dec-2007 9 Updated ID value on Table 2: Absolute maximum ratings 24-Mar-2010 10 Inserted dv/dt value in Table 2: Absolute maximum ratings Doc ID 9241 Rev 10 STB/F/P/W11NM80 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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