STMICROELECTRONICS STP35NF10

STB35NF10
STP35NF10
N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220
Low gate charge STripFET™ II Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STB35NF10
100V
<0.035Ω
40A
STP35NF10
100V
<0.035Ω
40A
3
■
Exceptional dv/dt capability
■
100% avalanche tested
■
Application oriented characterization
1
3
1
2
D2PAK
TO-220
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
2PAK
STB35NF10T4
B35NF10
D
STP35NF10
P35NF10
TO-220
June 2006
Rev 4
Packaging
Tape & reel
Tube
1/14
www.st.com
14
Contents
STB35NF10 - STP35NF10
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
................................................ 8
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STB35NF10 - STP35NF10
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source voltage (VGS = 0)
100
V
Drain-gate voltage (RGS = 20 kΩ)
100
V
Gate- source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
40
A
ID
Drain current (continuous) at TC = 100°C
28
A
Drain current (pulsed)
160
A
Total dissipation at TC = 25°C
115
W
Derating Factor
0.77
W/°C
Peak diode recovery voltage slope
13
V/ns
Single pulse avalanche energy
300
mJ
-55 to 175
°C
IDM
(1)
Ptot
dv/dt
EAS
(2)
(3)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤35A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
3. Starting Tj = 25 °C, ID = 20A, VDD = 80V
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
1.30
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Maximum lead temperature for soldering purpose
300
°C
TJ
3/14
Electrical characteristics
2
STB35NF10 - STP35NF10
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS =0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max ratings
VDS = max ratings,
TC = 125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 17.5A
Table 4.
Symbol
Test conditions
Typ.
Max.
100
2
Unit
V
1
10
µA
µA
±100
nA
3
4
V
0.030
0.035
Ω
Typ.
Max.
Unit
Dynamic
Parameter
Test conditions
Min.
gfs (1)
Forward
transconductance
VDS = 15V, ID = 17.5A
20
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
1550
220
95
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 50V, ID = 17.5A
RG = 4.7Ω VGS = 10V
(see Figure 12)
17
60
60
15
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 80V, ID = 35A,
VGS = 10V
(see Figure 13)
55
12
20
nC
nC
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/14
Min.
STB35NF10 - STP35NF10
Table 5.
Symbol
Electrical characteristics
Source drain diode
Parameter
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
Test conditions
Min.
Typ.
ISD = 35A, VGS = 0
ISD = 35A,
Reverse recovery time
di/dt = 100A/µs,
Reverse recovery charge
VDD = 25V, Tj = 150°C
Reverse recovery current
(see Figure 14)
160
720
9
Max.
Unit
40
160
A
A
1.5
V
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/14
Electrical characteristics
STB35NF10 - STP35NF10
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/14
STB35NF10 - STP35NF10
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
7/14
Test circuit
3
STB35NF10 - STP35NF10
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
Figure 15. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 16. Unclamped inductive waveform
8/14
Figure 17. Switching time waveform
STB35NF10 - STP35NF10
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/14
Package mechanical data
STB35NF10 - STP35NF10
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8
10
E1
0.368
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0º
0.015
4º
3
V2
0.4
1
10/14
STB35NF10 - STP35NF10
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
11/14
Packaging mechanical data
5
STB35NF10 - STP35NF10
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
12/14
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB35NF10 - STP35NF10
6
Revision history
Revision history
Table 6.
Revision history
Date
Revision
Changes
21-Jun-2004
3
Complete version
26-Jun-2006
4
New template, no content change
13/14
STB35NF10 - STP35NF10
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