STS8DNH3LL Dual n-channel 30 V - 0.018 Ω - 8 A - SO-8 low gate charge STripFET™ III Power MOSFET Features Type VDSS RDS(on) max ID STS8DNH3LL 30 V < 0.022 Ω 8A ■ Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Conduction losses reduced ■ Switching losses reduced S0-8 Application ■ Switching applications Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology which is suitable for the most demanding DC-DC converter applications where high efficiency is required. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STS8DNH3LL 8DH3LL SO-8 Tape & reel June 2008 Rev 2 1/12 www.st.com 12 Contents STS8DNH3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STS8DNH3LL 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (vGS = 0) 30 V VGS Gate- source voltage ±16 V ID Drain current (continuous) at TC = 25°C 8 A ID Drain current (continuous) at TC = 100°C 5 A Drain current (pulsed) 32 A PTOT Total dissipation at TC = 25°C 2 W EAS(2) Single pulse avalanche energy 100 mJ Value Unit Thermal resistance junction-ambient max 62.5 °C/W Thermal operating junction-ambient 150 °C -55 to 150 °C IDM (1) 1. Pulse width limited by safe operating area 2. Starting TJ = 25 °C, ID = 6 A Table 3. Thermal data Symbol Rthj-a (1) TJ Tstg Parameter Storage temperature 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10s 3/12 Electrical characteristics 2 STS8DNH3LL Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source Breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage Drain current (VGS = 0) VDS = Max rating 1 µA IDSS Zero gate voltage Drain current (VGS = 0) VDS =Max rating @125°C 10 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 16 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS,ID = 250 µA Static drain-source on resistance VGS = 10 V, ID = 4 A 0.018 0.022 RDS(on) Ω VGS = 4.5 V, ID = 4 A 0.020 0.025 Ω Typ. Max. Unit V(BR)DSS Table 5. Symbol 4/12 On/off states 30 V 1 V Dynamic Parameter gfs Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 15 V, ID = 4 A VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 15 V, ID = 8 A, VGS = 4.5 V (see Figure 14) Min. 8.5 S 857 pF 147 pF 20 pF 7 10 nC 2.5 nC 2.3 nC STS8DNH3LL Electrical characteristics Table 6. Symbol Switching times Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=15 V, ID=4 A, RG=4.7 Ω, VGS= 4.5 V (see Figure 16) 12 14.5 ns ns td(off) tf Turn-off delay time Fall time VDD=15 V, ID=4 A, RG=4.7 Ω, VGS= 4.5 V (see Figure 16) 23 8 ns ns Table 7. Symbol Source drain diode Parameter Test conditions Min Typ. Max Unit ISD Source-drain current VDD=15 V, ID=4 A, RG=4.7 Ω, VGS= 4.5 V 8 A ISDM (1) Source-drain current (pulsed) VDD=15 V, ID= 4A RG=4.7 Ω, VGS=4.5 V 32 A VSD (2) Forward on voltage ISD = 8 A, VGS = 0 1.5 V trr Qrr IRRM ISD = 8 A,VDD = 15 V Reverse recovery time di/dt = 100 A/µs, Reverse recovery charge T = 150°C Reverse recovery current j (see Figure 15) 15 5.7 0.76 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STS8DNH3LL 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal resistance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Static drain-source on resistance Figure 7. Normalized BVDSS vs temperature 6/12 STS8DNH3LL Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. for Q1 Figure 10. Normalized gate threshold voltage vs temperature for Q1 Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/12 Test circuit 3 STS8DNH3LL Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Figure 18. Switching time waveform STS8DNH3LL 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STS8DNH3LL SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 3.8 4.0 0.14 L 0.4 1.27 0.015 S 0.244 0.050 F M 10/12 MIN. 0.6 0.157 0.050 0.023 8 (max.) STS8DNH3LL 5 Revision history Revision history Table 8. Document revision history Date Revision Changes 15-Jun-2004 1 First release 16-Jun-2008 2 Modified marking 11/12 STS8DNH3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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