Preliminary TSM6970D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 21 @ VGS = 4.5V 8 25 @ VGS = 2.5V 7 33 @ VGS = 1.8V 6 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance ● ESD Protect 2KV Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM6970DCA RV TSSOP-8 3Kpcs / 13” Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V ID 8 A IDM 30 A IS 2.5 A Continuous Drain Current, VGS @4.5V Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) a,b o Maximum Power Dissipation Ta = 25 C PD o Ta = 70 C Operating Junction Temperature W 1.28 +150 o C TJ, TSTG -55 to +150 o C Symbol Limit TJ Operating Junction and Storage Temperature Range 2 Thermal Performance Parameter Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance (PCB mounted) RӨJA Unit 30 o C/W 62.5 o C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. 1/4 Version: Preliminary Preliminary TSM6970D 20V Dual N-Channel MOSFET w/ESD Protected Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.4 -- 1 V Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±10 uA Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IDSS -- -- 1 uA On-State Drain Current VDS =5V, VGS = 4.5V ID(ON) 10 -- -- A -- 18 21 -- 21 25 -- 26 33 VGS = 4.5V, ID = 8A Drain-Source On-State Resistance VGS = 2.5V, ID = 7A RDS(ON) VGS = 1.8V, ID = 6A mΩ Forward Transconductance VDS = 5V, ID = 8A gfs -- 13 -- S Diode Forward Voltage IS = 2.5A, VGS = 0V VSD -- -- 1.7 V Qg -- 13.8 -- Qgs -- 4.1 -- Qgd -- 5.6 -- Ciss -- 1160 -- Coss -- 104 -- Crss -- 29 -- td(on) -- 140 200 tr -- 210 250 td(off) -- 3700 4800 -- 2000 2600 Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 10V, ID = 8A, VGS = 4.5V VDS = 10V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 10V, ID = 1A, VGEN = 4.5V, RG = 3Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/4 nS Version: Preliminary Preliminary TSM6970D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 Mechanical Drawing DIM A a B C D E e F L 3/4 TSSOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.20 6.60 0.244 0.260 4.30 4.50 0.170 0.177 2.90 3.10 0.114 0.122 0.65 (typ) 0.025 (typ) 0.25 0.30 0.010 0.019 1.05 1.20 0.041 0.049 0.05 0.15 0.002 0.009 0.127 0.005 0.50 0.70 0.020 0.028 Version: Preliminary Preliminary TSM6970D 20V Dual N-Channel MOSFET w/ESD Protected Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary