TSM4415 Preliminary 30V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5, Drain -30 26 @ VGS = -20V -8.0 35 @ VGS = -10V -8.0 Features ● ● ID (A) Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance (1,2,3) Application ● ● Load Switch PA Switch (4) Ordering Information Part No. TSM4415CS RL (5,6,7,8) Package Packing SOP-8 2.5kpcs/13” reel P-Channel MOSFET Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V ID -8 A IDM -30 A IS -1 A Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) a,b o Maximum Power Dissipation Ta = 25 C PD o Ta = 70 C Operating Junction Temperature W 2.1 +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit TJ Operating Junction and Storage Temperature Range 3 Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance RӨJF Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. 1/1 RӨJA Unit 30 o 75 o C/W C/W Version: Preliminary TSM4415 Preliminary 30V P-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA BVDSS -30 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1.0 -- -3.0 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA VDS = -24V, VGS = 0V IDSS -- -- -1.0 µA VDS ≥-10V, VGS = -5V ID(ON) -6 -- -- A -- 21 26 -- 28 35 -- 41 -- Zero Gate Voltage Drain Current On-State Drain Current a VGS = -20V, ID = -8A Drain-Source On-State Resistance a VGS = -10V, ID = -8A RDS(ON) VGS = -6V, ID = -5A Forward Transconductance a Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching mΩ VDS = -5V, ID = -8A gfs -- 11.5 -- S IS = -1A, VGS = 0V VSD -- -0.8 -1.0 V Qg -- 18.1 -- Qgs -- 6.5 -- Qgd -- 3.2 -- Ciss -- 1047.9 -- Coss -- 172.8 -- Crss -- 115.5 -- td(on) -- 20.5 -- tr -- 4.4 -- td(off) -- 42.8 -- -- 7.3 -- VDS = -15V, ID = -8A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -15V, RL = 1.8Ω, ID = -1A, VGEN = -10V, RG = 3Ω tf Turn-Off Fall Time Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/2 nS Version: Preliminary TSM4415 Preliminary 30V P-Channel MOSFET SOP-8 Mechanical Drawing A SOP-8 DIMENSION DIM 9 16 B 1 P 8 MILLIMETERS MAX MIN MAX. A 4.80 5.00 0.189 0.196 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G G R C D M F K 3/3 INCHES MIN 1.27BSC 0.05BSC K 0.10 0.25 0.004 0.009 M 0º 7º 0º 7º P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019 Version: Preliminary Preliminary TSM4415 30V P-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary