UTC-IC 12N70

UNISONIC TECHNOLOGIES CO., LTD
12N70
Power MOSFET
12 Amps, 700 Volts
N-CHANNEL MOSFET
„
DESCRIPTION
The UTC 12N70 are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
„
FEATURES
*Pb-free plating product number:12N70L
* RDS(ON) = 0.7Ω @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
12N70-TA3-T
12N70L-TA3-T
12N70-TF3-T
12N70L-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2008 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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QW-R502-220.A
12N70
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
12
A
Continuous Drain Current
ID
12
A
Pulsed Drain Current (Note 1)
IDM
48
A
Single Pulsed (Note 2)
EAS
790
mJ
Avalanche Energy
24
mJ
Repetitive (Note 1)
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
700
V
Drain-Source Leakage Current
IDSS
VDS = 600 V, VGS = 0 V
10
μA
Gate-Source Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±100 nA
Breakdown Voltage Temperature
△BVDSS/△TJ ID = 250 μA, Referenced to 25°C
0.7
V/℃
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 6.0A
0.55 0.7
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1480 1900 pF
VDS = 25 V, VGS = 0 V, f = 1MHz
Output Capacitance
COSS
200 270 pF
Reverse Transfer Capacitance
CRSS
25
35
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
30
70
ns
VDD = 300V, ID = 12A, RG = 25Ω
Turn-On Rise Time
tR
115 240 ns
(Note 4, 5)
Turn-Off Delay Time
tD(OFF)
95 200 ns
Turn-Off Fall Time
tF
85 180 ns
Total Gate Charge
QG
42
54
nC
VDS= 480V,ID= 12A, VGS= 10 V
Gate-Source Charge
QGS
8.6
nC
(Note 4, 5)
21
nC
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 12A
1.4
V
Maximum Continuous Drain-Source Diode
IS
12
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
48
A
Forward Current
Reverse Recovery Time
tRR
380
ns
VGS = 0 V, IS = 12A,
dI
/dt
=
100
A/μs
(Note
4)
Reverse Recovery Charge
QRR
3.5
μC
F
Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature.
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QW-R502-220.A
12N70
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-220.A
12N70
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
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Time
Fig. 4B Unclamped Inductive Switching Waveforms
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12N70
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Power MOSFET
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-Resign Characteristics
Top:
VGS
15V
1
10V
10
8.0V
7.0V
6.5V
6.0V
Bottom: 5.5V
101
150℃
25℃
10
0
55℃
0
10
Notes:
250μs Pulse Test
TC=25℃
10-1
100
101
Drain-Source Voltage, VGS (V)
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10-1
2
Notes:
1.VDS=50V
2.250μs Pulse Test
4
6
8
Gate-Source Voltage, VGS (V)
10
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12N70
On-Resistance, RDS(ON) (mΩ)
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
„
Power MOSFET
Thermal Response, ZθJC(t)
Transient Thermal Response Curve
D=0.5
100
0.2
Notes:
1.θJC(t)=2.27℃/W Max.
2.Duty Factor,D=t1/t2
3.TJM-TC=PDM*θJC(t)
0.1
0.05
10-1
0.02
0.01
PDM
Single Pulse
t
T
10-2
10-5
10-4
10-3
10-2
10-1
Square Wave Pulse Duration, t1 (sec)
100
101
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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