CENTRAL CMLT5551HC

Central
CMLT5551HC
Semiconductor Corp.
SURFACE MOUNT
PICOminiTM
HIGH CURRENT
SILICON NPN TRANSISTOR
C
C
C
C
TM
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5551HC
type is a high current NPN silicon transistor,
manufactured by the epitaxial planar process and
epoxy molded in an SOT-563 suface mount
package. This PICOmini™ device has been
designed for high voltage and high current
amplifier applications.
E
B
MARKING CODE: C51
SOT-563 CASE
O
MAXIMUM RATINGS: (TA=25 C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
VCBO
VCEO
VEBO
IC
PD
180
160
6.0
1.0
350
TJ,Tstg
ΘJA
-65 to +150
357
V
V
V
A
mW
O
C
C/W
O
O
ELECTRICAL CHARACTERISTICS: (TA=25 C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
ICBO
VCB=120V
VCB=120V, TA=100°C
50
nA
50
µA
IEBO
BVCBO
VEB=4.0V
50
nA
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
TYP
IC=100µA
IC=1.0mA
180
V
160
V
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
6.0
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=1.0A
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
V
0.15
V
0.20
V
1.00
V
1.00
V
80
80
250
30
10
100
MHz
15
pF
R0 (28-January 2005)
Central
TM
CMLT5551HC
Semiconductor Corp.
SURFACE MOUNT
PICOminiTM
HIGH CURRENT
SILICON NPN TRANSISTOR
SOT-563 CASE - MECHANICAL OUTLINE
D
E
A
6
E
5
4
B
G
1
C
F
3
2
H
R0
LEAD CODE:
1) COLLECTOR
2) COLLECTOR
3) BASE
4) EMITTER
5)COLLECTOR
6) COLLECTOR
MARKING CODE: C51
R0 (28-January 2005)