CENTRAL CP192V

PROCESS
CP192V
Small Signal Transistors
NPN - Amp Switch Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
13 x 17 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Area
3.0 X 3.0 MILS
Emitter Bonding Pad Area
3.0 X 3.0 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 18,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
52,920
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PRINCIPAL DEVICE TYPES
2N3904
CMKT3904
CMLT3904E
CMPT3904
CMST3904
CXT3904
CZT3904
R0 (13-February 2006)
PROCESS
CP192V
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (13-February 2006)