PROCESS CP192V Small Signal Transistors NPN - Amp Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13 x 17 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.0 X 3.0 MILS Emitter Bonding Pad Area 3.0 X 3.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 52,920 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PRINCIPAL DEVICE TYPES 2N3904 CMKT3904 CMLT3904E CMPT3904 CMST3904 CXT3904 CZT3904 R0 (13-February 2006) PROCESS CP192V Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13-February 2006)