PROCESS CP624 Central Programmable Unijunction Transistor TM Semiconductor Corp. PROCESS DETAILS Process PLANAR PASSIVATED Die Size 27.5 x 27.5 MILS Die Thickness 11 MILS Anode Bonding Pad Area 7.1 x 5.1 MILS Cathode Bonding Pad Area 7.1 x 5.1 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 13,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 14,930 PRINCIPAL DEVICE TYPES 2N6028 BACKSIDE GATE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (4- February 2004) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP624 Typical Electrical Characteristics R3 (4- February 2004)