CENTRAL CPD41

PROCESS
CPD41
Central
Switching Diode
TM
Semiconductor Corp.
High Current Switching Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
20 x 20 MILS
Die Thickness
8.0 MILS
Anode Bonding Pad Area
6.5 x 6.5 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 12,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
29,250
PRINCIPAL DEVICE TYPES
1N3600
1N4150
CMPD4150
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
Central
Typical Electrical Characteristics
Semiconductor Corp.
Forward Voltage
Leakage Current
100
IR, Reverse Current (µA)
IF, Forward Current (mA)
1000
TA = 125°C
100
10
TA = -40°C
1
TA = 125°C
10
1
TA = 75°C
0.1
TA = 25°C
TA = 25°C
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0
10
VF, Forward Voltage (V)
Capacitance
30
40
50
Forward Dynamic Impedance
ZD, Dynamic Impedance (ohms)
0.96
0.94
0.92
0.9
0.88
0.86
0.84
0.82
20
VR, Reverse Voltage (V)
0.98
C, Capacitance (pF)
CPD41
PROCESS
TM
TA = 25°C
100
10
1
TA = 25°C
0.1
0.8
0.1
1
10
VR, Reverse Voltage (V)
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
100
1
10
100
1000
IF, Forward Current (mA)
R2 (1-August 2002)