PROCESS CPD41 Central Switching Diode TM Semiconductor Corp. High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 29,250 PRINCIPAL DEVICE TYPES 1N3600 1N4150 CMPD4150 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central Typical Electrical Characteristics Semiconductor Corp. Forward Voltage Leakage Current 100 IR, Reverse Current (µA) IF, Forward Current (mA) 1000 TA = 125°C 100 10 TA = -40°C 1 TA = 125°C 10 1 TA = 75°C 0.1 TA = 25°C TA = 25°C 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 0 10 VF, Forward Voltage (V) Capacitance 30 40 50 Forward Dynamic Impedance ZD, Dynamic Impedance (ohms) 0.96 0.94 0.92 0.9 0.88 0.86 0.84 0.82 20 VR, Reverse Voltage (V) 0.98 C, Capacitance (pF) CPD41 PROCESS TM TA = 25°C 100 10 1 TA = 25°C 0.1 0.8 0.1 1 10 VR, Reverse Voltage (V) 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com 100 1 10 100 1000 IF, Forward Current (mA) R2 (1-August 2002)