PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 139,050 PRINCIPAL DEVICE TYPES CMDD6263 CMKD6263 CMLD6263 Series CMOD6263 CMPD6263 SERIES CMSD6263 SERIES CMUD6263 Series 1N6263 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13 -February 2006) PROCESS CPD92V Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13 -February 2006)