CENTRAL CPD98V

PROCESS
CPD98V
Central
Schottky Diode
Semiconductor Corp.
Silicon High Current Schottky Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
11 x 11 MILS
Die Thickness
7.1 MILS
Anode Bonding pad Area
6.3 x 6.3 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 12,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
93,826
PRINCIPAL DEVICE TYPES
CMUSH2-4 Series
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
TM
R0 (20- January 2006)