PROCESS CPD98V Central Schottky Diode Semiconductor Corp. Silicon High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 6.3 x 6.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 93,826 PRINCIPAL DEVICE TYPES CMUSH2-4 Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com TM R0 (20- January 2006)