CENTRAL CPQ057

PROCESS
CPQ057
TRIAC
2.0 Amp, 600 Volt TRIAC Chip
PROCESS DETAILS
Process
Glass Passivated Mesa
Die Size
57 x 57 MILS
Die Thickness
8.6 MILS ± 0.6 MILS
MT1 Bonding Pad Area
28 x 16 MILS
Gate Bonding Pad Area
10 x 9 MILS
Top Side Metalization
Al - 45,000Å
Back Side Metalization
Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
3,374
PRINCIPAL DEVICE TYPES
CQ92-2M
CQ223-2M
CQ89-2M
BACKSIDE MT2
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (29 -March 2005)