PROCESS CPQ057 TRIAC 2.0 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Glass Passivated Mesa Die Size 57 x 57 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 28 x 16 MILS Gate Bonding Pad Area 10 x 9 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CQ92-2M CQ223-2M CQ89-2M BACKSIDE MT2 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (29 -March 2005)