PROCESS CPS090 Silicon Controlled Rectifier 8.0 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Glass Passivated Mesa Die Size 90 x 90 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 60 x 30 MILS Gate Bonding Pad Area 22 x 22 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIER PER 4 INCH WAFER 1,310 PRINCIPAL DEVICE TYPES CS220-8M Series CSD-8M Series CSDD-8M Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (4- January 2006)