PROCESS CPS130 Silicon Controlled Rectifier 16 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Glass Passivated Mesa Die Size 130 x 130 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 99 x 49 MILS Gate Bonding Pad Area 42 x 42 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIER PER 4 INCH WAFER 624 PRINCIPAL DEVICE TYPES CS220-16M Series CSDD-16M Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (4- January 2006)