PROCESS CPS053 Silicon Controlled Rectifier 2.0 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Glass Passivated Mesa Die Size 53 x 53 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 20 x 10 MILS Gate Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIER PER 4 INCH WAFER 3,884 PRINCIPAL DEVICE TYPES CS92-2M Series CS223-2M Series MCR22-6 Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (4- January 2006)