PROCESS CPQ150 Triac 16 Amp, 600 Volt Triac Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 150 MILS x 150 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 68.9 MILS x 118 MILS Gate Bonding Pad Area 39.4 MILS x 39.4 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 466 PRINCIPAL DEVICE TYPES CQ220-16B Series CQDD-16M Series BACKSIDE MT2 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (19 -May 2005) PROCESS CPQ150 Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (19 -May 2005)