CENTRAL CPQ110

Central
TM
Semiconductor Corp.
PROCESS
CPQ110
Triac
8.0 Amp, 600 Volt Triac Chip
PROCESS DETAILS
Process
GLASS PASSIVATED MESA
Die Size
110 MILS x 110 MILS
Die Thickness
8.6 MILS ± 0.6 MILS
MT1 Bonding Pad Area
80 MILS x 35 MILS
Gate Bonding Pad Area
37 MILS x 37 MILS
Top Side Metalization
Al - 45,000Å
Back Side Metalization
Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
876
PRINCIPAL DEVICE TYPES
CQ220-8B Series
CQDD-8M Series
BACKSIDE MT2
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (05-MAY 2005)