Central TM Semiconductor Corp. PROCESS CPQ110 Triac 8.0 Amp, 600 Volt Triac Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 110 MILS x 110 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 80 MILS x 35 MILS Gate Bonding Pad Area 37 MILS x 37 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 876 PRINCIPAL DEVICE TYPES CQ220-8B Series CQDD-8M Series BACKSIDE MT2 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (05-MAY 2005)