SPICE MODELS: BSS138DW BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · Low On-Resistance A Low Gate Threshold Voltage D2 Low Input Capacitance G1 SOT-363 S1 Fast Switching Speed B C Available in Lead Free/RoHS Compliant Version (Note 4) Qualified to AEC-Q101 Standards for High Reliability S2 G2 Mechanical Data · · D1 G H Case: SOT-363 · · · Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K Moisture Sensitivity: Level 1 per J-STD-020C J M D L F Terminals: Solderable per MIL-STD-202, Method 208 D2 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 6, on Page 2 · · · · G1 S1 Terminal Connections: See Diagram Marking Code (See Page 2): K38 S2 G2 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm D1 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol BSS138DW Units Drain-Source Voltage VDSS 50 V Drain-Gate Voltage (Note 3) VDGR 50 V VGSS ±20 V Gate-Source Voltage Continuous Drain Current (Note 1) Continuous Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic ID 200 mA Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 50 75 ¾ V VGS = 0V, ID = 250mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 0.5 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS ¾ ¾ ±100 nA VGS = ±20V, VDS = 0V OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) VGS(th) 0.5 1.2 1.5 V VDS = VGS, ID = 250mA RDS (ON) ¾ 1.4 3.5 W VGS = 10V, ID = 0.22A gFS 100 ¾ ¾ mS Input Capacitance Ciss ¾ ¾ 50 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 8.0 pF Turn-On Delay Time tD(ON) ¾ ¾ 20 ns Turn-Off Delay Time tD(OFF) ¾ ¾ 20 ns Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS =25V, ID = 0.2A, f = 1.0KHz DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Note: 1. 2. 3. 4. VDD = 30V, ID = 0.2A, RGEN = 50W Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration test pulse used to minimize self-heating effect. RGS £ 20KW. No purposefully added lead. DS30203 Rev. 8 - 2 1 of 5 www.diodes.com BSS138DW ã Diodes Incorporated Ordering Information (Note 5) Notes: 5. 6. Device Packaging Shipping BSS138DW-7 SOT-363 3000/Tape & Reel For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BSS138DW-7-F. Marking Information YM K38 K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM K38 Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 0.6 VGS = 3.5V ID, DRAIN-SOURCE CURRENT (A) Tj = 25° C 0.5 VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 0 2 1 3 5 4 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage ID, DRAIN-SOURCE CURRENT (A) 0.8 -55° C VDS = 1V 0.7 0.6 25° C 0.5 150° C 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics DS30203 Rev. 8 - 2 2 of 5 www.diodes.com BSS138DW RDS(ON), NORMALIZED DRAIN-SOURCE ON RESISTANCE (W) 2.45 2.25 2.05 VGS = 10V ID = 0.5A 1.85 1.65 1.45 VGS = 4.5V ID = 0.075A 1.25 1.05 0.85 0.65 -55 45 -5 95 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature VGS(th), GATE THRESHOLD VOLTAGE (V) 2 1.8 1.6 ID = 1.0mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -55 -40 -25 -10 5 20 35 50 65 80 95 110 125 140 RDS(ON), DRAIN-SOURCE ON RESISTANCE (W) Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 8 7 150° C VGS = 2.5V 6 5 25° C 4 3 -55° C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current DS30203 Rev. 8 - 2 3 of 5 www.diodes.com BSS138DW 9 8 VGS = 2.75V 7 150° C 6 5 4 25° C 3 2 -55° C 1 0 0.1 0.05 0 0.15 0.25 0.2 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current 6 VGS = 4.5V 5 150° C 4 3 2 25° C 1 -55° C 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.45 0.4 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 3.5 VGS = 10V 3 150° C 2.5 2 1.5 25° C 1 -55° C 0.5 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current DS30203 Rev. 8 - 2 4 of 5 www.diodes.com BSS138DW ID, DIODE CURRENT (A) 1 0.1 150° C -55° C 0.01 25° C 0.001 0 0.2 0.4 0.6 0.8 1.2 1 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 100 C, CAPACITANCE (pF) VGS = 0V f = 1MHz CiSS 10 COSS CrSS 1 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage DS30203 Rev. 8 - 2 5 of 5 www.diodes.com BSS138DW