NS8AT - NS8MT Glass Passivated General Purpose TO-220AB PRV : 50 - 1000 Volts Io : 8.0 Ampere 0.154(3.91)DIA. 0.148(3.74) FEATURES : 0.055(1.39) 0.045(1.14) 0.113(2.87) 0.103(2.62) * High current capability * High surge current capability 0.145(3.68) 0.135(3.43) 0.635(16.13) 0.625(15.87) * High reliability 0.185(4.70) 0.175(4.44) 0.415(10.54)MAX. 0.603(15.32) 0.573(14.55) 0.350(8.89) 0.330(8.39) 1 2 3 * Low reverse current * Low forward voltage drop 0.160(4.06) 0.140(3.56) PIN 1 0.560(14.22) 0.530(13.46) PIN 2 * Glass passivated chip junction * Pb / RoHS Free CASE PIN 3 0.037(0.94) 0.027(0.68) 0.205(520) 0.195(4.95) MECHANICAL DATA : 0.022(0.56) 0.014(0.36) 0.105(2.67) 0.095(2.41) * Case : Epoxy, Molded * Lead Temperature for Soldering Purposes: Dimensions in inches and ( millimeters ) 260°C Max. for 10 Seconds * Weight : 1.9 grams (Approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL NS8 AT NS8 BT NS8 DT NS8 GT NS8 JT NS8 KT NS8 MT UNIT Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum Working Reverse Voltage V RWM 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Current, Tc = 150°C I F(AV) 8.0 A IFSM 125 A VF 1.1 V RATING Maximum Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at I F = 8 A Maximum Reverse Current at Tc = 25 °C IR 10 µA Rated DC Blocking Voltage Tc = 150 °C IR(H) 100 µA RθJC 3.0 °C/W Junction Temperature Range TJ - 55 to + 150 °C Storage Temperature Range T STG - 55 to + 150 °C Maximum Thermal Resistance, Junction to Case Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( NS8AT ~ NS8MT ) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 12 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURRENT 10 8 6 60 Hz Resistive or Inductive Load 4 2 0 TJ =TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC) Method 125 100 75 50 25 0 0 25 50 75 100 125 150 175 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS FORWARD CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES 100 10 Pulse Width = 300 µs 1% Duty Cycle 1 0.1 0 TJ = 100 °C 10 1 TJ = 25 °C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 JUNCTION CAPACITANCE, pF INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 12 0 TJ = 25°C f = 1.0 MHz Vsig = 50 mVp-p 10 0 80 60 40 20 0 0.1 1 10 100 1000 REVERSE VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 25, 2005