Freescale Semiconductor Technical Data 3G Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems. • Third Order Intercept: 45 dBm Typ • Power Gain: 31 dB Typ (@ f = 2140 MHz) • Input VSWR v 1.5:1 Features • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications • RoHS Compliant MHL21336NN 2110 - 2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power Pin +5 dBm Storage Temperature Range Tstg - 40 to +100 °C Operating Case Temperature Range TC - 20 to +100 °C Rating Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25°C; 50 Ω System) Characteristic Symbol Supply Current Min Typ Max Unit IDD — 500 525 mA Power Gain (f = 2140 MHz) Gp 30 31 33 dB Gain Flatness (f = 2110 - 2170 MHz) GF — 0.15 0.4 dB Power Output @ 1 dB Compression (f = 2140 MHz) P1dB 34 35 — dBm Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz) ITO 44 45 — dBm Noise Figure NF — 4.5 5 dB (f = 2170 MHz) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08 Document Number: MHL21336NN Rev. 0, 12/2006 MHL21336NN 1 VDD = 26 Vdc TC = 25_C P1dB, ITO (dBm) ITO 10 0 ORL −10 IRL 45 40 P1dB 35 −20 30 −30 1600 1800 2000 2200 2400 2600 25 1800 2800 1900 2000 2100 2200 2300 2400 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency Figure 2. P1dB, ITO versus Frequency 40 600 48 G p , POWER GAIN (dB) VDD = 26 Vdc f = 2140 MHz 38 VDD = 26 Vdc f = 2140 MHz 47 35 2500 37 550 500 IDD ITO (dBm) 30 I DD (mA) 46 Gp 36 ITO 45 35 P1dB 44 25 34 450 43 20 −40 −20 0 20 40 60 80 100 400 120 42 −40 33 −20 0 20 40 60 80 100 TEMPERATURE (_C) TEMPERATURE (_C) Figure 3. Power Gain, IDD versus Temperature Figure 4. ITO, P1dB versus Temperature 2.4 VDD = 26 Vdc f = 2140 MHz −1420 PHASE ( _ ) −1440 GROUP DELAY −1460 2.1 −1480 −1500 −40 2 −20 0 20 40 60 80 100 TEMPERATURE (_C) Figure 5. Phase(1), Group Delay(1) versus Temperature 1.9 120 VDD = 26 Vdc f = 2110 − 2170 MHz 0.5 2.3 2.2 PHASE 0.6 G F , GAIN FLATNESS (dB) −1400 0.4 32 120 0.6 0.5 0.4 GF 0.3 0.3 0.2 0.2 PHASE LINEARITY 0.1 0 −40 0.1 −20 0 20 40 60 80 100 TEMPERATURE (_C) Figure 6. Gain Flatness, Phase Linearity versus Temperature 0 120 P1dB (dBm) 50 20 PHASE LINEARITY ( _ ) 30 −40 1400 LIFETIME BUY 55 VDD = 26 Vdc TC = 25_C Gp GROUP DELAY (nS) G p , POWER GAIN/RETURN LOSS (dB) 40 LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08 TYPICAL CHARACTERISTICS 1. In Production Test Fixture MHL21336NN 2 RF Device Data Freescale Semiconductor IDD 36.5 Gp 400 I DD (mA) ITO (dBm) 46.5 500 36 P1dB 46 35.5 ITO 45.5 31 30.8 22 LIFETIME BUY 47 600 31.4 31.2 37 f = 2140 MHz TC = 25_C 300 45 200 23 24 25 26 27 28 29 35 44.5 22 30 34.5 34 23 24 25 26 27 28 29 VOLTAGE (VOLTS) VOLTAGE (VOLTS) Figure 7. Power Gain, IDD versus Voltage Figure 8. ITO, P1dB versus Voltage −1435 2.25 GROUP DELAY PHASE ( _ ) 0.35 f = 2110 − 2170 MHz TC = 25_C 0.3 −1436 2.2 0.3 0.25 0.25 GF 0.2 −1437 30 0.35 2.3 f = 2140 MHz TC = 25_C GROUP DELAY (nS) G F , GAIN FLATNESS (dB) G p , POWER GAIN (dB) 31.6 47.5 0.2 0.15 PHASE −1438 2.15 0.15 PHASE LINEARITY 0.1 0.1 0.05 −1439 22 2.1 23 24 25 26 27 28 29 Figure 9. Group Voltage 1. In Production Test Fixture Delay(1) 0 22 0.05 0 23 24 25 26 27 28 29 VOLTAGE (VOLTS) VOLTAGE (VOLTS) Phase(1), 30 versus P1dB (dBm) 700 f = 2140 MHz TC = 25_C PHASE LINEARITY ( _ ) 31.8 Figure 10. Phase Linearity, Gain Flatness versus Voltage 30 LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08 TYPICAL CHARACTERISTICS MHL21336NN RF Device Data Freescale Semiconductor 3 PACKAGE DIMENSIONS A A 2X G 0.020 (0.51) M T A R 1 2 3 4 K W 0.020 (0.51) M 4X D T B M N L H F E C 4X P 0.020 (0.51) T SEATING PLANE M T S A M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. S J M S B M Q 0.008 (0.20) T DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC STYLE 1: PIN 1. 2. 3. 4. CASE: MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC RF INPUT VDD1 VDD2 RF OUTPUT GROUND CASE 301AP - 02 ISSUE E MHL21336NN 4 RF Device Data Freescale Semiconductor REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2006 Description • Initial Release of Data Sheet MHL21336NN RF Device Data Freescale Semiconductor 5 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MHL21336NN Document Number: MHL21336NN 6Rev. 0, 12/2006 RF Device Data Freescale Semiconductor