FREESCALE MHL21336NN

Freescale Semiconductor
Technical Data
3G Band
RF Linear LDMOS Amplifier
LIFETIME BUY
Designed for ultra - linear amplifier applications in 50 ohm systems operating
in the 3G frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital CDMA modulation systems.
• Third Order Intercept: 45 dBm Typ
• Power Gain: 31 dB Typ (@ f = 2140 MHz)
• Input VSWR v 1.5:1
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• RoHS Compliant
MHL21336NN
2110 - 2170 MHz
3.0 W, 31 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
DC Supply Voltage
VDD
30
Vdc
RF Input Power
Pin
+5
dBm
Storage Temperature Range
Tstg
- 40 to +100
°C
Operating Case Temperature Range
TC
- 20 to +100
°C
Rating
Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Min
Typ
Max
Unit
IDD
—
500
525
mA
Power Gain
(f = 2140 MHz)
Gp
30
31
33
dB
Gain Flatness
(f = 2110 - 2170 MHz)
GF
—
0.15
0.4
dB
Power Output @ 1 dB Compression
(f = 2140 MHz)
P1dB
34
35
—
dBm
Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz)
ITO
44
45
—
dBm
Noise Figure
NF
—
4.5
5
dB
(f = 2170 MHz)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08
Document Number: MHL21336NN
Rev. 0, 12/2006
MHL21336NN
1
VDD = 26 Vdc
TC = 25_C
P1dB, ITO (dBm)
ITO
10
0
ORL
−10
IRL
45
40
P1dB
35
−20
30
−30
1600
1800
2000
2200
2400
2600
25
1800
2800
1900
2000
2100
2200
2300
2400
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 1. Power Gain, Input Return Loss,
Output Return Loss versus Frequency
Figure 2. P1dB, ITO versus Frequency
40
600
48
G p , POWER GAIN (dB)
VDD = 26 Vdc
f = 2140 MHz
38
VDD = 26 Vdc
f = 2140 MHz
47
35
2500
37
550
500
IDD
ITO (dBm)
30
I DD (mA)
46
Gp
36
ITO
45
35
P1dB
44
25
34
450
43
20
−40
−20
0
20
40
60
80
100
400
120
42
−40
33
−20
0
20
40
60
80
100
TEMPERATURE (_C)
TEMPERATURE (_C)
Figure 3. Power Gain, IDD versus Temperature
Figure 4. ITO, P1dB versus Temperature
2.4
VDD = 26 Vdc
f = 2140 MHz
−1420
PHASE ( _ )
−1440
GROUP DELAY
−1460
2.1
−1480
−1500
−40
2
−20
0
20
40
60
80
100
TEMPERATURE (_C)
Figure 5. Phase(1), Group Delay(1) versus
Temperature
1.9
120
VDD = 26 Vdc
f = 2110 − 2170 MHz
0.5
2.3
2.2
PHASE
0.6
G F , GAIN FLATNESS (dB)
−1400
0.4
32
120
0.6
0.5
0.4
GF
0.3
0.3
0.2
0.2
PHASE LINEARITY
0.1
0
−40
0.1
−20
0
20
40
60
80
100
TEMPERATURE (_C)
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
0
120
P1dB (dBm)
50
20
PHASE LINEARITY ( _ )
30
−40
1400
LIFETIME BUY
55
VDD = 26 Vdc
TC = 25_C
Gp
GROUP DELAY (nS)
G p , POWER GAIN/RETURN LOSS (dB)
40
LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08
TYPICAL CHARACTERISTICS
1. In Production Test Fixture
MHL21336NN
2
RF Device Data
Freescale Semiconductor
IDD
36.5
Gp
400
I DD (mA)
ITO (dBm)
46.5
500
36
P1dB
46
35.5
ITO
45.5
31
30.8
22
LIFETIME BUY
47
600
31.4
31.2
37
f = 2140 MHz
TC = 25_C
300
45
200
23
24
25
26
27
28
29
35
44.5
22
30
34.5
34
23
24
25
26
27
28
29
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
Figure 7. Power Gain, IDD versus Voltage
Figure 8. ITO, P1dB versus Voltage
−1435
2.25
GROUP DELAY
PHASE ( _ )
0.35
f = 2110 − 2170 MHz
TC = 25_C
0.3
−1436
2.2
0.3
0.25
0.25
GF
0.2
−1437
30
0.35
2.3
f = 2140 MHz
TC = 25_C
GROUP DELAY (nS)
G F , GAIN FLATNESS (dB)
G p , POWER GAIN (dB)
31.6
47.5
0.2
0.15
PHASE
−1438
2.15
0.15
PHASE LINEARITY
0.1
0.1
0.05
−1439
22
2.1
23
24
25
26
27
28
29
Figure 9.
Group
Voltage
1. In Production Test Fixture
Delay(1)
0
22
0.05
0
23
24
25
26
27
28
29
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
Phase(1),
30
versus
P1dB (dBm)
700
f = 2140 MHz
TC = 25_C
PHASE LINEARITY ( _ )
31.8
Figure 10. Phase Linearity, Gain Flatness
versus Voltage
30
LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08
TYPICAL CHARACTERISTICS
MHL21336NN
RF Device Data
Freescale Semiconductor
3
PACKAGE DIMENSIONS
A
A
2X
G
0.020 (0.51)
M
T A
R
1
2
3
4
K
W
0.020 (0.51)
M
4X
D
T B
M
N
L
H
F
E
C
4X
P
0.020 (0.51)
T
SEATING
PLANE
M
T S
A
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION "F" TO CENTER OF LEADS.
S
J
M
S
B
M
Q
0.008 (0.20)
T
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
W
INCHES
MIN
MAX
1.760
1.780
1.370
1.390
0.245
0.265
0.017
0.023
0.080
0.100
0.086 BSC
1.650 BSC
1.290 BSC
0.266
0.280
0.125
0.165
0.990 BSC
0.390 BSC
0.008
0.013
0.118
0.132
0.535
0.555
0.445
0.465
0.090 BSC
STYLE 1:
PIN 1.
2.
3.
4.
CASE:
MILLIMETERS
MIN
MAX
44.70
45.21
34.80
35.31
6.22
6.73
0.43
0.58
2.03
2.54
2.18 BSC
41.91 BSC
32.77 BSC
6.76
7.11
3.18
4.19
25.15 BSC
9.91 BSC
0.20
0.33
3.00
3.35
13.59
14.10
11.30
11.81
2.29 BSC
RF INPUT
VDD1
VDD2
RF OUTPUT
GROUND
CASE 301AP - 02
ISSUE E
MHL21336NN
4
RF Device Data
Freescale Semiconductor
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Dec. 2006
Description
• Initial Release of Data Sheet
MHL21336NN
RF Device Data
Freescale Semiconductor
5
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
+1 - 800- 521- 6274 or +1 - 480- 768- 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800- 441- 2447 or 303 - 675- 2140
Fax: 303 - 675- 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical
characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MHL21336NN
Document Number: MHL21336NN
6Rev. 0, 12/2006
RF Device Data
Freescale Semiconductor