Freescale Semiconductor Technical Data Document Number: MHL9838N Rev. 7, 8/2006 Cellular Band RF Linear LDMOS Amplifier MHL9838N Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA and CDMA. • Third Order Intercept: 50 dBm Typ • Power Gain: 31 dB Typ (@ f = 880 MHz) • Input and Output VSWR v 1.5:1 Features • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications • For Use in TDMA and CDMA Multi - Carrier Applications • N Suffix Indicates Lead - Free Terminations 800 - 925 MHz 8.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Rating Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power Pin +6 dBm Storage Temperature Range Tstg - 40 to +100 °C Operating Case Temperature Range TC - 20 to +100 °C Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain (f = 880 MHz) Gain Flatness (f = 800 - 925 MHz) Power Output @ 1 dB Compression (f = 880 MHz) Symbol Min Typ Max Unit IDD — 770 800 mA Gp 29.5 31 32.5 dB GF — 0.1 0.3 dB P1dB — 39 — dBm Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) ITO 49 50 — dBm Noise Figure NF — 3.7 4.5 dB (f = 925 MHz) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MHL9838N 1 TYPICAL CHARACTERISTICS 60 VDD = 28 Vdc TC = 25°C 55 Gp 20 P1dB, ITO (dBm) 0 ORL ITO 50 45 40 −20 P1dB −40 400 800 35 VDD = 28 Vdc TC = 25°C 1200 f, FREQUENCY (MHz) 1600 30 500 2000 Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency 33 VDD = 28 Vdc f = 880 MHz ITO (dBm) 740 −20 0 20 40 60 TEMPERATURE (°C) 39 80 100 P1dB 38 37 44 VDD = 28 Vdc f = 880 MHz 42 40 −40 720 120 −20 0 20 40 60 TEMPERATURE (°C) 80 100 0.30 VDD = 28 Vdc f = 880 MHz GROUP DELAY −440 2.0 1.9 −445 −20 0 20 40 60 TEMPERATURE (°C) 80 100 1.8 120 Figure 5. Phase(1), Group Delay(1) versus Temperature 1. In Production Test Fixture VDD = 28 Vdc f = 800−925 MHz G F , GAIN FLATNESS (dB) 2.1 GROUP DELAY (nS) PHASE ( °) PHASE −435 35 120 0.80 0.25 2.2 −430 36 Figure 4. ITO, P1dB versus Temperature −420 −450 −40 40 ITO 46 Figure 3. Power Gain, IDD versus Temperature −425 1200 41 50 I DD , (mA) G p , POWER GAIN (dB) 760 29 28 −40 1100 52 800 780 IDD 30 900 800 1000 f, FREQUENCY (MHz) 48 Gp 31 700 Figure 2. P1dB, ITO versus Frequency 820 32 600 0.20 0.70 0.60 0.15 0.50 GF 0.10 0.40 PHASE LINEARITY 0.05 0 −40 0.30 −20 0 20 40 60 TEMPERATURE (°C) 80 100 0.20 120 Figure 6. Gain Flatness, Phase Linearity versus Temperature MHL9838N 2 P1dB (dBm) IRL RF Device Data Freescale Semiconductor PHASE LINEARITY( °) POWER GAIN/RETURN LOSS (dB) 40 TYPICAL CHARACTERISTICS 31.5 31.3 900 52 800 50 39 30.9 600 48 38 P1dB 46 37 Gp f = 880 MHz TC = 25°C 30.5 22 24 26 VOLTAGE (VOLTS) 28 500 42 22 400 30 2.11 −432.5 2.10 GROUP DELAY 2.09 −433.5 2.08 PHASE f = 880 MHz TC = 25°C −434.5 22 24 26 VOLTAGE (VOLTS) 28 2.07 2.06 30 Figure 9. Phase(1), Group Delay(1) versus Voltage 1. In Production Test Fixture PHASE LINEARITY( °) −432 −434 24 26 VOLTAGE (VOLTS) 36 28 30 35 Figure 8. ITO, P1dB versus Voltage GROUP DELAY (nS) Figure 7. Power Gain, IDD versus Voltage −433 f = 880 MHz TC = 25°C 44 0.45 0.15 0.40 0.14 0.35 0.13 PHASE LINEARITY 0.30 0.12 GF 0.25 0.11 0.20 0.10 f = 800−925 MHz TC = 25°C 0.15 0.10 22 24 26 VOLTAGE (VOLTS) 28 0.09 30 0.08 Figure 10. Phase Linearity, Gain Flatness versus Voltage MHL9838N RF Device Data Freescale Semiconductor 3 G F , GAIN FLATNESS (dB) 30.7 P1dB (dBm) 700 ITO (dBm) ITO I DD (mA) G p , POWER GAIN (dB) IDD 31.1 PHASE ( °) 40 PACKAGE DIMENSIONS A A 2X G 0.020 (0.51) M T A R 1 T S 2 3 4 K W 0.020 (0.51) M 4X D T B M N L H F E C 4X P 0.020 (0.51) T SEATING PLANE M A M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. S J M S B M Q 0.008 (0.20) T DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC STYLE 1: PIN 1. 2. 3. 4. CASE: MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC RF INPUT VDD1 VDD2 RF OUTPUT GROUND CASE 301AP - 02 ISSUE E MHL9838N 4 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MHL9838N Document RF DeviceNumber: Data MHL9838N Rev. 7, 8/2006 Freescale Semiconductor 5