FREESCALE MHL9838N

Freescale Semiconductor
Technical Data
Document Number: MHL9838N
Rev. 7, 8/2006
Cellular Band
RF Linear LDMOS Amplifier
MHL9838N
Designed for ultra- linear amplifier applications in 50 ohm systems operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA and CDMA.
• Third Order Intercept: 50 dBm Typ
• Power Gain: 31 dB Typ (@ f = 880 MHz)
• Input and Output VSWR v 1.5:1
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• For Use in TDMA and CDMA Multi - Carrier Applications
• N Suffix Indicates Lead - Free Terminations
800 - 925 MHz
8.0 W, 31 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
VDD
30
Vdc
RF Input Power
Pin
+6
dBm
Storage Temperature Range
Tstg
- 40 to +100
°C
Operating Case Temperature Range
TC
- 20 to +100
°C
Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25°C; 50 Ω System)
Characteristic
Supply Current
Power Gain
(f = 880 MHz)
Gain Flatness
(f = 800 - 925 MHz)
Power Output @ 1 dB Compression
(f = 880 MHz)
Symbol
Min
Typ
Max
Unit
IDD
—
770
800
mA
Gp
29.5
31
32.5
dB
GF
—
0.1
0.3
dB
P1dB
—
39
—
dBm
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
ITO
49
50
—
dBm
Noise Figure
NF
—
3.7
4.5
dB
(f = 925 MHz)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHL9838N
1
TYPICAL CHARACTERISTICS
60
VDD = 28 Vdc
TC = 25°C
55
Gp
20
P1dB, ITO (dBm)
0
ORL
ITO
50
45
40
−20
P1dB
−40
400
800
35
VDD = 28 Vdc
TC = 25°C
1200
f, FREQUENCY (MHz)
1600
30
500
2000
Figure 1. Power Gain, Input Return Loss,
Output Return Loss versus Frequency
33
VDD = 28 Vdc
f = 880 MHz
ITO (dBm)
740
−20
0
20
40
60
TEMPERATURE (°C)
39
80
100
P1dB
38
37
44
VDD = 28 Vdc
f = 880 MHz
42
40
−40
720
120
−20
0
20
40
60
TEMPERATURE (°C)
80
100
0.30
VDD = 28 Vdc
f = 880 MHz
GROUP DELAY
−440
2.0
1.9
−445
−20
0
20
40
60
TEMPERATURE (°C)
80
100
1.8
120
Figure 5. Phase(1), Group Delay(1) versus Temperature
1. In Production Test Fixture
VDD = 28 Vdc
f = 800−925 MHz
G F , GAIN FLATNESS (dB)
2.1
GROUP DELAY (nS)
PHASE ( °)
PHASE
−435
35
120
0.80
0.25
2.2
−430
36
Figure 4. ITO, P1dB versus Temperature
−420
−450
−40
40
ITO
46
Figure 3. Power Gain, IDD versus Temperature
−425
1200
41
50
I DD , (mA)
G p , POWER GAIN (dB)
760
29
28
−40
1100
52
800
780
IDD
30
900
800
1000
f, FREQUENCY (MHz)
48
Gp
31
700
Figure 2. P1dB, ITO versus Frequency
820
32
600
0.20
0.70
0.60
0.15
0.50
GF
0.10
0.40
PHASE LINEARITY
0.05
0
−40
0.30
−20
0
20
40
60
TEMPERATURE (°C)
80
100
0.20
120
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
MHL9838N
2
P1dB (dBm)
IRL
RF Device Data
Freescale Semiconductor
PHASE LINEARITY( °)
POWER GAIN/RETURN LOSS (dB)
40
TYPICAL CHARACTERISTICS
31.5
31.3
900
52
800
50
39
30.9
600
48
38
P1dB
46
37
Gp
f = 880 MHz
TC = 25°C
30.5
22
24
26
VOLTAGE (VOLTS)
28
500
42
22
400
30
2.11
−432.5
2.10
GROUP DELAY
2.09
−433.5
2.08
PHASE
f = 880 MHz
TC = 25°C
−434.5
22
24
26
VOLTAGE (VOLTS)
28
2.07
2.06
30
Figure 9. Phase(1), Group Delay(1) versus Voltage
1. In Production Test Fixture
PHASE LINEARITY( °)
−432
−434
24
26
VOLTAGE (VOLTS)
36
28
30
35
Figure 8. ITO, P1dB versus Voltage
GROUP DELAY (nS)
Figure 7. Power Gain, IDD versus Voltage
−433
f = 880 MHz
TC = 25°C
44
0.45
0.15
0.40
0.14
0.35
0.13
PHASE LINEARITY
0.30
0.12
GF
0.25
0.11
0.20
0.10
f = 800−925 MHz
TC = 25°C
0.15
0.10
22
24
26
VOLTAGE (VOLTS)
28
0.09
30
0.08
Figure 10. Phase Linearity, Gain Flatness
versus Voltage
MHL9838N
RF Device Data
Freescale Semiconductor
3
G F , GAIN FLATNESS (dB)
30.7
P1dB (dBm)
700
ITO (dBm)
ITO
I DD (mA)
G p , POWER GAIN (dB)
IDD
31.1
PHASE ( °)
40
PACKAGE DIMENSIONS
A
A
2X
G
0.020 (0.51)
M
T A
R
1
T S
2
3
4
K
W
0.020 (0.51)
M
4X
D
T B
M
N
L
H
F
E
C
4X
P
0.020 (0.51)
T
SEATING
PLANE
M
A
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION "F" TO CENTER OF LEADS.
S
J
M
S
B
M
Q
0.008 (0.20)
T
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
W
INCHES
MIN
MAX
1.760
1.780
1.370
1.390
0.245
0.265
0.017
0.023
0.080
0.100
0.086 BSC
1.650 BSC
1.290 BSC
0.266
0.280
0.125
0.165
0.990 BSC
0.390 BSC
0.008
0.013
0.118
0.132
0.535
0.555
0.445
0.465
0.090 BSC
STYLE 1:
PIN 1.
2.
3.
4.
CASE:
MILLIMETERS
MIN
MAX
44.70
45.21
34.80
35.31
6.22
6.73
0.43
0.58
2.03
2.54
2.18 BSC
41.91 BSC
32.77 BSC
6.76
7.11
3.18
4.19
25.15 BSC
9.91 BSC
0.20
0.33
3.00
3.35
13.59
14.10
11.30
11.81
2.29 BSC
RF INPUT
VDD1
VDD2
RF OUTPUT
GROUND
CASE 301AP - 02
ISSUE E
MHL9838N
4
RF Device Data
Freescale Semiconductor
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MHL9838N
Document
RF
DeviceNumber:
Data MHL9838N
Rev. 7, 8/2006
Freescale
Semiconductor
5