Freescale Semiconductor Technical Data Document Number: MHPA19010N Rev. 6, 5/2006 PCS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. • Typical CDMA Performance: 1960 MHz, 28 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 • Adjacent Channel Power: - 51 dBc @ 30 dBm, 885 kHz Channel Spacing • Power Gain: 24.5 dB Min (@ f = 1960 MHz) • 0.2 dB Typical Gain Flatness Features • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications • N Suffix Indicates Lead - Free Terminations MHPA19010N 1930- 1990 MHz 10 W, 24.5 dB RF HIGH POWER LDMOS AMPLIFIER CASE 301AP - 02, STYLE 3 Table 1. Maximum Ratings (TC = 25°C unless otherwise noted) Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power (Single Carrier CW) Pin +20 dBm Storage Temperature Range Tstg - 40 to +100 °C Operating Case Temperature Range TC - 20 to +100 °C Quiescent Bias Current IDQ 750 mA Rating Table 2. Electrical Characteristics (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 600 mA, TC = 25°C, 50 Ω System) Characteristic Supply Current Symbol Min Typ Max Unit IDD — 600 — mA Power Gain (f = 1960 MHz) Gp 24.5 25 — dB Gain Flatness (f = 1930 - 1990 MHz) GF — 0.2 0.5 dB Power Output @ 1 dB Comp. (f = 1960 MHz) P1dB — 41.5 — dBm Input VSWR (f = 1930 - 1990 MHz) VSWRin — 1.5:1 2:1 Noise Figure (f = 1960 MHz) NF — 8 10 dB ACPR — - 58 - 51 dBc Adjacent Channel Power Rejection @ 30 dBm, 1.23 MHz BW, 885 kHz Channel Spacing © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MHPA19010N 1 TYPICAL CHARACTERISTICS 5 27 Gps 0 26 ORL −5 25 VDD = 28 Vdc Pout = 5 W IDQ = 600 mA 100 kHz Tone Spacing −10 −15 28 IRL 24 23 −20 22 20 2−Carrier CDMA Carrier Spacing = 2.5 MHz Carrier Bandwidth = 1.2288 MHz Gps 27 TC = 25_C 26 25 16 −10_C 14 85_C 24 23 −10_C 10 22 8 25_C −25 21 21 6 85_C 1940 1950 1960 1970 1980 20 1990 20 1920 1930 1940 1950 −30 85_C −40 ACPR −50 −10_C 25_C 2−Carrier CDMA, Carrier Spacing = 2.5 MHz Carrier Bandwidth = 1.2288 MHz IM3 −50 85_C −55 −60 ACPR @ 885 kHz, Bandwidth = 30 kHz IM3 @ 2.5 MHz, Bandwidth = 1.2288 MHz 1930 1940 1950 1960 1970 1980 1990 −70 2000 4 2000 1990 −25 VDD = 28 Vdc, IDQ = 600 mA 100 kHz: f1 = 1959.95 MHz f2 = 1960.05 MHz 10 MHz: f1 = 1955 MHz f2 = 1965 MHz −30 −35 −40 −45 100 kHz −50 10 MHz −55 −60 20 15 25 30 35 40 f, FREQUENCY (MHz) Pout, OUTPUT POWER (dBm) PEP Figure 3. 2 - Carrier CDMA IM3 and ACPR versus Frequency Figure 4. Two - Tone CDMA IMD versus Output Power −25 −30 IDQ = 800 mA −35 500 mA −40 700 mA −45 −50 VDD = 28 Vdc f1 = 1959.95 MHz f2 = 1960.05 MHz 600 mA −55 −60 15 20 25 30 35 40 Pout, OUTPUT POWER (dBm) PEP Figure 5. Third Order Intermodulation Distortion versus Output Power η, DRAIN EFFICIENCY (%), P out OUTPUT POWER (dBm) −60 1920 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, POUT = 1 W (Avg.), IDQ = 600 mA 25_C −45 1980 Figure 2. 2 - Carrier CDMA Power Gain and Efficiency versus Frequency −20 −40 1970 f, FREQUENCY (MHz) −35 TC = −10_C 1960 48 27.5 42 27 Gps 36 26.5 30 26 Pout 24 25.5 18 25 12 24.5 6 VDD = 28 Vdc IDQ = 600 mA f = 1960 MHz η 0 −5 0 5 10 15 G ps , POWER GAIN (dB) −30 1930 Figure 1. Two - Tone Power Gain, Input Return Loss and Output Return Loss versus Frequency IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 12 VDD = 28 Vdc Pout = 1 W (Avg.) IDQ = 600 mA η f, FREQUENCY (MHz) IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 18 η, DRAIN EFFICIENCY (%) 28 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) IRL/ORL, INPUT/OUTPUT RETURN LOSS (dB) 10 24 23.5 20 25 PIN, (dBm) Figure 6. CW Output Power, Efficiency and Gain versus Input Power MHPA19010N 2 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS −30 10 VDD = 28 Vdc IDQ = 600 mA f1 = 1960 MHz f2 = 1962.5 MHz IM3 (dBc), ACPR (dBc) −40 −45 9 8 7 −50 6 −55 5 IM3 −60 4 −65 3 −70 2 ACPR −75 1 η −80 5 10 η, DRAIN EFFICIENCY (%) −35 15 20 25 30 0 35 Pout, OUTPUT POWER (dBm) Figure 7. 2 - Carrier CDMA ACPR, IM3 and Efficiency versus Output Power MHPA19010N RF Device Data Freescale Semiconductor 3 NOTES MHPA19010N 4 RF Device Data Freescale Semiconductor NOTES MHPA19010N RF Device Data Freescale Semiconductor 5 NOTES MHPA19010N 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A A 2X G 0.020 (0.51) M T A R 1 T S 2 3 4 K W 0.020 (0.51) M 4X D T B M N L H F E C 4X P 0.020 (0.51) T SEATING PLANE M A M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. S J M S B M Q 0.008 (0.20) T DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC STYLE 3: PIN 1. 2. 3. 4. CASE: MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC RF INPUT VBIAS VDD RF OUTPUT GROUND CASE 301AP - 02 ISSUE E Note: VDD (Pin 3) should always be applied before VBIAS (Pin 2). MHPA19010N RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MHPA19010N Document Number: MHPA19010N 8Rev. 6, 5/2006 RF Device Data Freescale Semiconductor