Freescale Semiconductor Technical Data Document Number: MMG1001 Rev. 5, 7/2005 Will be replaced by MMG1001NT1 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MMG1001R2 MMG1001T1 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 -, 112 - and 132 -Channel Loading • Excellent Distortion Performance • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. T1 Suffix = 1,000 Units per 16 mm, 13 inch Reel. Applications • CATV Systems Operating in the 40 to 870 MHz Frequency Range • Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems • Output Stage Amplifier on Applications Requiring Low Power Dissipation and High Output Performance • Driver Amplifier in Linear General Purpose Applications Description • 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module 870 MHz 19 dB GAIN 132 -CHANNEL CATV INTEGRATED AMPLIFIER MODULE 16 1 CASE 978-03 PFP-16 Table 1. Maximum Ratings Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +65 dBmV DC Supply Voltage 24 V Application 12 V Application VCC Vdc +26 +14 Operating Case Temperature Range TC -20 to +100 °C Storage Temperature Range Tstg -40 to +100 °C Symbol Value Unit RθJC 6.6 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Pin 3 Pin 15 Q3 Q1 Pin 4 RG3 RS1 Pin 5 Pin 13 RS2 RG4 Pin 6 Q2 Q4 Pin 7 Figure 1. Functional Diagram Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor Pin 11 N.C. 1 16 N.C. N.C. 2 15 VD3 VG1 3 14 N.C. VS1 4 13 VGC VC 5 12 N.C. VS2 6 11 VD4 VG2 N.C. 7 8 10 9 N.C. N.C. (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections MMG1001R2 MMG1001T1 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (minimum) Machine Model M1 (minimum) Charge Device Model C5 (minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 3 260 °C Per JESD 22-A113, IPC/JEDEC J-STD-020 Table 5. Electrical Characteristics for 24 V Application (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 — 870 MHz Power Gain 50 MHz 870 MHz Gp — — 18 19 — — dB Slope 40 - 870 MHz S — 0.6 — dB Gain Flatness (40 - 870 MHz, Peak to Valley) GF — 0.5 — dB Input Return Loss (Zo = 75 Ohms) IRL — — 21 19 22 — — — — — 22 17 — — Output Return Loss (Zo = 75 Ohms) f = 40-160 MHz f = 161-450 MHz f = 451-870 MHz dB ORL f = 40-400 MHz f = 401-870 MHz dB Composite Second Order (Vout = +44 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT CSO132 CSO112 CSO79 — — — -65 -65 -71 -58 -59 -62 Cross Modulation Distortion @ Ch 2 (Vout = +44 dBmV/ch., FM = 55 MHz) (Vout = +46 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT XMD132 XMD112 XMD79 — — — -64 -63 -62 -52 -52 -52 Composite Triple Beat (Vout = +44 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT CTB132 CTB112 CTB79 — — — -63 -64 -65 -56 -56 -58 NF — — 4 4 5.0 5.0 IDC 230 250 265 Noise Figure dBc dBc dBc 50 MHz 870 MHz DC Current (VDC = 24 V, TC = -20° to +100°C) dB mA (continued) MMG1001R2 MMG1001T1 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics for 12 V Application (VCC = 12 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 — 870 MHz Power Gain 50 MHz 870 MHz Gp — — 18 19 — — dB Slope 40 - 870 MHz S — 0.6 — dB Gain Flatness (40 - 870 MHz, Peak to Valley) GF — 0.5 — dB Input Return Loss (Zo = 75 Ohms) IRL — — 21 19 19 — — — — — — 19 17 15 — — — Output Return Loss (Zo = 75 Ohms) f = 40-160 MHz f = 161-450 MHz f = 451-870 MHz dB ORL f = 40-400 MHz f = 401-750 MHz f = 751-870 MHz dB Composite Second Order (Vout = +42 dBmV/ch., Worst Case) (Vout = +42 dBmV/ch., Worst Case) 112-Channel FLAT 79-Channel FLAT CSO112 CSO79 — — -65 -71 — — Cross Modulation Distortion @ Ch 2 (Vout = +42 dBmV/ch., FM = 55 MHz) (Vout = +42 dBmV/ch., FM = 55 MHz) 112-Channel FLAT 79-Channel FLAT XMD112 XMD79 — — -63 -62 — — Composite Triple Beat (Vout = +42 dBmV/ch., Worst Case) (Vout = +42 dBmV/ch., Worst Case) 112-Channel FLAT 79-Channel FLAT CTB112 CTB79 — — -64 -65 — — NF — — 4 4 5.0 5.0 dB IDC 190 210 225 mA Noise Figure dBc dBc dBc 50 MHz 870 MHz DC Current (VDC = 12 V, TC = -20° to +100°C) MMG1001R2 MMG1001T1 RF Device Data Freescale Semiconductor 3 C10 C7 R13 R9 Pin 15 Pin 4 C3 RF INPUT T1 Pin 3 C5 R11 T2 R18 Pin 5 C12 R12 C6 Pin 11 RF OUTPUT C11 VCC C4 C8 C9 D2 R16 Pin 7 R10 R17 Pin 13 R15 Pin 6 C1 L1 D3 L2 R14 R1 R19 R2 R3 D1 R4 R7 R6 Q2 Q1 C2 R5 R8 Figure 3. MMG1001 50 -870 MHz Test Circuit Schematic Table 6. MMG1001 50 -870 MHz Test Circuit Component Designations and Values Designation Description (24 V Application) Description (12 V Application) C1, C7, C8, C11 220 pF Chip Capacitors (0603) 220 pF Chip Capacitors (0603) C2, C3, C4, C9, C10 0.01 mF Chip Capacitors (0603) 0.01 mF Chip Capacitors (0603) C5, C6 1.8 pF Chip Capacitors (0603) 1.8 pF Chip Capacitors (0603) C12 5.6 pF Chip Capacitor (0603) 5.6 pF Chip Capacitor (0603) D1 5.1 V Zener Diode, On/MM3Z5V1T1 5.1 V Zener Diode, On/MM3Z5V1T1 D2 27 V Zener Diode, On/MM3Z27VT1 27 V Zener Diode, On/MM3Z27VT1 D3 Transient Voltage Suppressor, On/1.5k27A/1.5SMC27AT3 Transient Voltage Suppressor, On/1.5k27A/1.5SMC27AT3 L1, L2 22 nH Chip Inductors (0603) 22 nH Chip Inductors (0603) Q1, Q2 Dual Transistors Package, On/MBT3904DW1T1 Dual Transistors Package, On/MBT3904DW1T1 R1 2.2 kW, 1/4 W Chip Resistor (1206) 820 W, 1/4 W Chip Resistor (1206) R2 560 W Chip Resistor (0603) 560 W Chip Resistor (0603) R3 82 W Chip Resistor (0603) 40 W Chip Resistor (0603) R4 820 W Chip Resistors (0603) 150 W Chip Resistors (0603) R5 820 W Chip Resistors (0603) 100 W Chip Resistors (0603) R6 120 W Chip Resistor (0603) 120 W Chip Resistor (0603) R7 1.5 kW Chip Resistor (0603) 1.5 kW Chip Resistor (0603) R8 12 W, 1 W Chip Resistor (2512) 4.8 W, 1 W Chip Resistor (2512) R9, R10, R15 470 W Chip Resistors (0603) 470 W Chip Resistors (0603) R11, R12 18 W Chip Resistors (0603) 18 W Chip Resistors (0603) R13, R14 910 W Chip Resistors (0603) 910 W Chip Resistors (0603) R16 2 kW Chip Resistor (0603) 2.7 kW Chip Resistor (0603) R17 6.2 kW Chip Resistor (0603) 6.2 kW Chip Resistor (0603) R18 15 W Chip Resistor (0603) 15 W Chip Resistor (0603) R19 0 W Chip Resistor (0603) 0 W Chip Resistor (0603) T1 Input Transformer, Mot/77PC016E068 Input Transformer, 77PC016E068 T2 Output Transformer, Mot/77PC016E061 Output Transformer, 77PC016E061 PCB FR4, 62 mil, εr = 4.81 FR4, 62 mil, εr = 4.81 MMG1001R2 MMG1001T1 4 RF Device Data Freescale Semiconductor MMG1001R2 Rev 0 R16 R5 R7 R19 C7 R9 Q1 R11 Q2 T1 R8 C1 L1 C3 C9 R15 C5 R6 C2 R13 T2 L2 R18 C6 C12 C4 R10 R12 C8 D2 R14 C11 R17 C10 R3 R2 R4 R1 D1 D3 GND Not Active VCC Note: 24 V Application, VCC = 24 V 12 V Application, VCC = 12 V Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MMG1001 50 -870 MHz Test Circuit Component Layout MMG1001R2 MMG1001T1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS FOR 24 V APPLICATION CTB, COMPOSITE TRIPLE BEAT (dBc) −60 48 dBmV 46 dBmV −65 50 dBmV 44 dBmV −70 42 dBmV 79−Channel Loading, Flat −75 200 0 400 600 f, FREQUENCY (MHz) Figure 5. Composite Triple Beat versus Frequency CSO, COMPOSITE SECOND ORDER (dBc) −65 48 dBmV 50 dBmV 46 dBmV −70 −75 42 dBmV −80 44 dBmV 79−Channel Loading, Flat −85 0 200 400 600 f, FREQUENCY (MHz) XMD, CROSS MODULATION DISTORTION (dBc) Figure 6. Composite Second Order versus Frequency −55 48 dBmV 50 dBmV −60 46 dBmV −65 44 dBmV 42 dBmV −70 79−Channel Loading, Flat −75 0 200 400 600 f, FREQUENCY (MHz) Figure 7. Cross Modulation Distortion versus Frequency MMG1001R2 MMG1001T1 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 D1 e/2 D 8 9 E1 8X bbb M B BOTTOM VIEW E C B S ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ b1 Y c A A2 DATUM PLANE SEATING PLANE H b aaa M ccc C q W GAUGE PLANE W L C A SECT W-W L1 C c1 A1 1.000 0.039 S NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC −−− 0.600 0_ 7_ 0.200 0.200 0.100 DETAIL Y CASE 978-03 ISSUE C PFP -16 MMG1001R2 MMG1001T1 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. E-mail: [email protected] For information on Freescale.s Environmental Products program, go to http://www.freescale.com/epp. USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MMG1001R2 MMG1001T1 Document Number: MMG1001 8Rev. 5, 7/2005 RF Device Data Freescale Semiconductor