Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 2, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 2110 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S21100NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S21100NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +175 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 73°C, 23 W CW RθJC 0.57 0.66 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MRF6S21100NR1 MRF6S21100NBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1050 mAdc) VGS(Q) — 2.8 — Vdc Fixture Gate Quiescent Voltage (1) (VDS = 28 Vdc, ID = 1050 mAdc, Measured in Functional Test) VGG(Q) 2.2 3.1 4.4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.3 Adc) VDS(on) — 0.24 — Vdc Crss — 1.5 — pF Off Characteristics On Characteristics Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13 14.5 16 dB Drain Efficiency ηD 24 25.5 36 % Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss IM3 - 47 - 37 - 35 dBc ACPR - 50 - 40 - 38 dBc IRL — - 12 - 10 dB 1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part is internally matched both on input and output. MRF6S21100NR1 MRF6S21100NBR1 2 RF Device Data Freescale Semiconductor R1 B1 VBIAS VSUPPLY + C1 R2 C2 C3 R3 C4 Z5 C5 C6 Z12 RF INPUT Z6 Z1 Z2 Z3 Z7 Z8 Z9 Z4 RF OUTPUT Z10 C9 Z11 C7 C8 DUT VSUPPLY C10 Z1, Z10 Z2 Z3 Z4 Z5 Z6 0.743″ 0.893″ 0.175″ 0.420″ 1.231″ 0.100″ x 0.084″ x 0.084″ x 0.084″ x 0.800″ x 0.040″ x 0.880″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z8 Z9 Z11, Z12 PCB C11 C12 0.259″ x 0.880″ Microstrip 0.215″ x 0.230″ Microstrip 0.787″ x 0.084″ Microstrip 1.171″ x 0.120″ Microstrip Arlon AD250, 0.030″, εr = 2.5 Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 25008051107Y0 Fair - Rite C1 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C2 0.01 μF Chip Capacitor C1825C103J1GAC Kemet C3, C4, C10 5.1 pF Chip Capacitors ATC600B5R1BT250XT ATC C5, C6, C11, C12 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C7 10 pF Chip Capacitor ATC600B100BT250XT ATC C8 1.1 pF Chip Capacitor ATC600B1R1BT250XT ATC C9 5.1 pF Chip Capacitor (MRF6S21100NR1) 8.2 pF Chip Capacitor (MRF6S21100NBR1) AT600B5R1BT250XT ATC600B8R2BT250XT ATC ATC R1 1 kΩ, 1/4 W Chip Resistor CRCW12061000FKTA Vishay R2 10 kΩ, 1/4 W Chip Resistor CRCW12061001FKTA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKTA Vishay MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 3 C3 B1 R3 C4 R1 R2 C2 C5 C7 C8 CUT OUT AREA C1 C6 C9 C11 C12 MRF6S21100N/NB, Rev. 3 C10 Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout MRF6S21100NR1 MRF6S21100NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD 26 25 24 14.2 Gps 14 −31 13.8 −34 IM3 −37 13.6 ACPR 13.4 −40 13.2 −43 13 2060 2080 IRL 2100 2120 2140 2160 2180 2200 −9 −10 −11 −12 −13 −46 2220 2240 −14 IRL, INPUT RETURN LOSS (dB) 14.4 27 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 14.6 28 VDD = 28 Vdc, Pout = 22.5 W (Avg.), IDQ = 1050 mA 2 −Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 14.8 ηD, DRAIN EFFICIENCY (%) 15 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 22.5 Watts Avg. 38 36 Gps, POWER GAIN (dB) 13.6 35 VDD = 28 Vdc, Pout = 45 W (Avg.), IDQ = 1050 mA 2 −Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 13.2 13 IM3 34 −24 −26 −28 12.8 12.6 −30 ACPR 12.4 −32 12.2 2060 2080 IRL 2100 2120 2140 2160 2180 2200 −9 −10 −11 −12 −13 −34 2220 2240 −14 IRL, INPUT RETURN LOSS (dB) 37 ηD 13.8 13.4 ηD, DRAIN EFFICIENCY (%) 14 IM3 (dBc), ACPR (dBc) 14.2 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 45 Watts Avg. 16 −10 1312 mA 15 Gps, POWER GAIN (dB) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1575 mA 1050 mA 14 787 mA 13 12 11 10 525 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements, 10 MHz Tone Spacing 0.1 1 10 100 300 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements, 10 MHz Tone Spacing −20 1575 mA −30 IDQ = 525 mA −40 1312 mA −50 1050 mA 787 mA −60 0.1 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 5 0 58 Ideal VDD = 28 Vdc, Pout = 100 W (PEP) IDQ = 1050 mA, Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz −10 Pout , OUTPUT POWER (dBm) −20 3rd Order −30 −40 5th Order −50 56 P3dB = 51.9 dBm (156.3 W) 54 P1dB = 51.3 dBm (135.8 W) Actual 52 VDD = 28 Vdc, IDQ = 1050 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 50 7th Order −60 0.1 48 1 10 100 300 32 34 36 TWO −TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 38 35 30 25 20 TC = 25_C −40 IM3 Gps 15 −45 −30_C 10 46 −55 0 0.5 44 −50 85_C 25_C 5 42 Figure 8. Pulsed CW Output Power versus Input Power −20 VDD = 28 Vdc, IDQ = 1050 mA, f1 = 2135 MHz −30_C 25_C −25 f2 = 2145 MHz, 2−Carrier W−CDMA ηD 10 MHz Carrier Spacing, 3.84 MHz 25_C Channel Bandwidth, PAR = 8.5 dB −30_C −30 @ 0.01% Probability (CCDF) 85_C −35 ACPR 40 40 Pin, INPUT POWER (dBm) 1 IM3 (dBc), ACPR (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS −60 100 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Gps, POWER GAIN (dB) 17 −30_C 25_C 16 Gps TC = −30_C 85_C 15 70 15 60 14 50 40 25_C 14 30 85_C Gps, POWER GAIN (dB) VDD = 28 Vdc IDQ = 1050 mA f = 2140 MHz ηD, DRAIN EFFICIENCY (%) 18 13 12 32 V 13 20 12 10 10 0 9 ηD 11 0.1 1 10 100 300 28 V 11 VDD = 24 V IDQ = 1050 mA f = 2140 MHz 0 20 40 60 80 100 120 140 160 180 200 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power MRF6S21100NR1 MRF6S21100NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 23 W Avg., and ηD = 25.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 12. MTTF versus Junction Temperature W - CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 0 −10 1 (dB) PROBABILITY (%) 10 0.1 −20 −30 −40 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.001 −50 0.0001 0 2 4 6 −70 −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −80 −25 −20 −60 8 10 PEAK −TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 7 Zo = 5 Ω Zo = 5 Ω f = 2110 MHz Zsource Zsource f = 2170 MHz Zload f = 2170 MHz f = 2170 MHz f = 2170 MHz f = 2110 MHz Zload f = 2110 MHz f = 2110 MHz MRF6S21100NR1 MRF6S21100NBR1 VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg. VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg. f MHz Zsource Ω Zload Ω f MHz Zsource Ω Zload Ω 2110 3.51 - j3.78 1.62 - j3.54 2110 3.56 - j3.92 1.62 - j3.47 2140 3.50 - j3.83 1.51 - j3.26 2140 3.55 - j3.97 1.53 - j3.19 2170 3.29 - j3.78 1.41 - j2.95 2170 3.34 - j3.90 1.44 - j2.89 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Device Under Test Input Matching Network Z source Output Matching Network Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21100NR1 MRF6S21100NBR1 8 RF Device Data Freescale Semiconductor TD - SCDMA CHARACTERIZATION R1 B1 VBIAS VSUPPLY + C1 R2 C2 C3 R3 C4 Z4 C5 C6 Z11 RF INPUT Z5 Z1 Z2 Z6 Z7 Z8 Z3 Z9 RF OUTPUT C9 Z10 C7 C8 DUT VSUPPLY C10 Z1 Z2 Z3 Z4 Z5 Z6 1.250″ 0.930″ 0.470″ 0.090″ 1.500″ 0.160″ x 0.084″ x 0.084″ x 0.800″ x 0.800″ x 0.040″ x 0.880″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z8 Z9 Z10 Z11 PCB C11 C12 0.320″ x 0.880″ Microstrip 0.370″ x 0.200″ Microstrip 0.650″ x 0.084″ Microstrip 1.230″ x 0.084″ Microstrip 0.870″ x 0.120″ Microstrip Arlon AD250, 0.030″, εr = 2.55 Figure 16. MRF6S21100NR1(NBR1) Test Circuit Schematic Table 7. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 25008051107Y0 Fair - Rite C1 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C2 0.01 μF Chip Capacitor C1825C103J1GAC Kemet C3, C4, C10 5.1 pF Chip Capacitors ATC600B5R1BT250XT ATC C5, C6, C11, C12 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C7 10 pF Chip Capacitor ATC600B100BT250XT ATC C8 1.1 pF Chip Capacitor ATC600B1R1BT250XT ATC C9 8.2 pF Chip Capacitor ATC600B8R2BT250XT ATC R1 1 kΩ, 1/4 W Chip Resistor CRCW12061000FKTA Vishay R2 10 kΩ, 1/4 W Chip Resistor CRCW12061001FKTA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKTA Vishay MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 9 B1 R3 C3 C4 R1 R2 C2 C5 C7 C8 CUT OUT AREA C1 C6 C9 C11 C12 MRF6S21100N/NB, Rev. 3 C10 Figure 17. MRF6S21100NR1(NBR1) Test Circuit Component Layout — TD - SCDMA MRF6S21100NR1 MRF6S21100NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS −30 18 3−Carrier TD−SCDMA VDD = 28 V, IDQ = 900 mA f = 2017.5 MHz ηD 15 Adj −L −40 12 9 −45 Alt−L 6 −50 3 −55 ηD, DRAIN EFFICIENCY (%) ALT/ACPR (dBc) −35 Adj −U Alt−U −60 0 0 1 3 2 4 5 6 7 9 8 Pout, OUTPUT POWER (WATTS) AVG. Figure 18. 3 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power −30 18 ALT/ACPR (dBc) −35 ηD 15 12 −40 Adj −U Alt−L Adj −L −45 9 −50 6 −55 3 Alt−U −60 0.5 ηD, DRAIN EFFICIENCY (%) 6−Carrier TD−SCDMA VDD = 28 V, IDQ = 900 mA f = 2017.5 MHz 0 1.5 2.5 3.5 4.5 5.5 6.5 7.5 Pout, OUTPUT POWER (WATTS) AVG. Figure 19. 6 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power TD - SCDMA TEST SIGNAL −30 −30 1.28 MHz Channel BW −40 −50 −50 −60 −70 +ALT2 in 1.28 MHz BW +3.2 MHz Offset −ALT2 in 1.28 MHz BW −3.2 MHz Offset −80 −90 −100 −ALT2 in 1.28 MHz BW −3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset −100 −110 −120 (dBm) (dBm) −90 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −60 −70 −80 1.28 MHz Channel BW −40 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −110 +ALT1 in 1.28 MHz BW +1.6 MHz Offset −ALT1 in 1.28 MHz BW −1.6 MHz Offset −130 Center 2.0175 GHz 1.5 MHz Span 15 MHz f, FREQUENCY (MHz) Figure 20. 3 - Carrier TD - SCDMA Spectrum −120 −ALT1 in 1.28 MHz BW −1.6 MHz Offset −130 Center 2.0175 GHz +ALT1 in 1.28 MHz BW +1.6 MHz Offset 2.5 MHz Span 25 MHz f, FREQUENCY (MHz) Figure 21. 6 - Carrier TD - SCDMA Spectrum MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 11 Zo = 10 Ω f = 1950 MHz f = 2070 MHz Zload f = 1950 MHz f = 2070 MHz Zsource VDD = 28 Vdc, IDQ = 900 mA f MHz Zsource W Zload W 1950 1.43 - j4.56 3.61 - j4.19 1960 1.57 - j4.80 3.86 - j4.40 1970 1.72 - j5.12 4.18 - j4.62 1980 1.65 - j5.27 4.21 - j4.81 1990 1.48 - j4.98 3.91 - j4.59 2000 1.38 - j4.45 3.56 - j4.07 2010 1.35 - j4.01 3.31 - j3.62 2020 1.30 - j3.57 3.14 - j3.40 2030 1.21 - j3.62 2.99 - j3.31 2040 1.25 - j3.61 3.02 - j3.31 2050 1.34 - j3.76 3.19 - j3.44 2060 1.37 - j4.08 3.38 - j3.75 2070 1.24 - j4.24 3.33 - j3.99 Zsource = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 22. Series Equivalent Source and Load Impedance — TD - SCDMA MRF6S21100NR1 MRF6S21100NBR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS E1 B A 2X E3 GATE LEAD DRAIN LEAD D D1 4X e 4X b1 aaa M C A 2X 2X D2 c1 E H DATUM PLANE F ZONE J A A1 2X A2 E2 NOTE 7 E5 E4 4 D3 3 ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW C SEATING PLANE PIN 5 NOTE 8 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S21100NR1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 DRAIN DRAIN GATE GATE SOURCE MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 13 MRF6S21100NR1 MRF6S21100NBR1 14 RF Device Data Freescale Semiconductor MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 15 MRF6S21100NR1 MRF6S21100NBR1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 2 Jan. 2007 Description • Added “TD - SCDMA” to data sheet description paragraph, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Added VGG(Q) and removed Min and Max value for VGS(Q) in On Characteristics table to account for the test fixture’s resistor divider network, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s capabilities, p. 5 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 9 - 12 • Added Product Documentation and Revision History, p. 17 MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRF6S21100NR1 MRF6S21100NBR1 Document Number: MRF6S21100N Rev. 2, 1/2007 18 RF Device Data Freescale Semiconductor