FREESCALE MRF6S21060NR1_08

Freescale Semiconductor
Technical Data
Document Number: MRF6S21060N
Rev. 5, 12/2008
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN- PCS/cellular radio, WLL and
TD-SCDMA applications.
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 610 mA,
Pout = 14 Watts Avg., f = 2115.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 225_C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S21060NR1
MRF6S21060NBR1
2110-2170 MHz, 14 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S21060NR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S21060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 60 W CW
Case Temperature 76°C, 14 W CW
°C/W
RθJC
0.89
1.04
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22-A113, IPC/JEDEC J-STD-020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1.5
2.2
2.5
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 610 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
—
0.3
—
Vdc
Crss
—
1.5
—
pF
Off Characteristics
On Characteristics (DC)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg., f1 = 2115.5 MHz, f2 =
2122.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13.5
15.5
16.5
dB
Drain Efficiency
ηD
24.5
26
—
%
Intermodulation Distortion
IM3
—
-37
-35
dBc
ACPR
—
-40
-38
dBc
IRL
—
-14
-10
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S21060NR1 MRF6S21060NBR1
2
RF Device Data
Freescale Semiconductor
R1
VBIAS
VSUPPLY
R2
C6
C1
C2
C3
Z6
C4
C5
Z15
RF
INPUT
R3
Z1
Z2
Z3
Z4
Z5
Z8
Z9
Z10
Z11
Z12
Z7
Z13
Z14
RF
OUTPUT
C8
Z16
C7
DUT
VSUPPLY
C9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.250″ x 0.080″ Microstrip
0.860″ x 0.080″ Microstrip
0.300″ x 0.405″ Microstrip
0.350″ x 0.080″ Microstrip
0.350″ x 0.755″ Microstrip
0.680″ x 0.080″ Microstrip
0.115″ x 0.755″ Microstrip
0.115″ x 1.000″ Microstrip
0.240″ x 1.000″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
C10
C11
0.270″ x 0.300″ Microstrip
0.230″ x 0.080″ Microstrip
0.310″ x 0.300″ Microstrip
0.830″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
1.000″ x 0.080″ Microstrip
1.100″ x 0.070″ Microstrip
Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55
Figure 1. MRF6S21060NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
CDR33BX104AKYS
Kemet
C2, C7
4.7 pF Chip Capacitors
ATC100B4R7BT500XT
ATC
C3, C8, C9
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C4, C5, C6, C10, C11
10 μF, 35 V Chip Capacitors
GRM55DR61H106KA88L
Murata
R1
1 k, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 k, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
3
R1
C4
R2
C6
C1
C2
C5
C3
CUT OUT AREA
R3
C7
C8
C9
C10 C11
MRF6S21060N Rev. 3
Figure 2. MRF6S21060NR1(NBR1) Test Circuit Component Layout
MRF6S21060NR1 MRF6S21060NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
28
15.4
15.2
15
27
26
VDD = 28 Vdc, Pout = 14 W (Avg.)
IDQ = 610 mA, 2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
25
Gps
24
-36
IM3
14.8
-38
14.6
-40
14.4
-42
IRL
14.2
14
2060
2080
2100
ACPR
2120
2140
2160
-44
2180
2200
-46
2220
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
15.6
-5
-10
-15
-20
-25
IRL, INPUT RETURN LOSS (dB)
ηD
15.8
ηD, DRAIN
EFFICIENCY (%)
16
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 14 Watts Avg.
ηD
Gps, POWER GAIN (dB)
15.2
15
14.8
38
37
VDD = 28 Vdc, Pout = 28 W (Avg.)
IDQ = 610 mA, 2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
36
-26
14.6
-28
IM3
14.4
IRL
-30
14.2
ACPR
-32
14
2060
2080
2100
2120
2140
2160
2180
2200
-34
2220
-6
-9
-12
-15
-18
-21
-24
IRL, INPUT RETURN LOSS (dB)
15.4
ηD, DRAIN
EFFICIENCY (%)
39
Gps
IM3 (dBc), ACPR (dBc)
15.6
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 28 Watts Avg.
17
-1 0
763 mA
16
Gps, POWER GAIN (dB)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 915 mA
610 mA
15
458 mA
14
305 mA
13
12
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
11
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
-2 0
-3 0
IDQ = 305 mA
915 mA
-4 0
-5 0
458 mA
763 mA
610 mA
-60
1
10
100
200
1
10
100
200
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
57
VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
-2 0
-3 0
55
Pout, OUTPUT POWER (dBm)
3rd Order
-4 0
5th Order
7th Order
-5 0
Ideal
P3dB = 49.986 dBm (99.68 W)
53
P1dB = 49.252 dBm (84.18 W)
51
Actual
49
47
VDD = 28 Vdc, IDQ = 610 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
45
-60
43
0.1
10
1
100
28
30
32
34
36
38
40
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TWO-T ONE SPACING (MHz)
60
50
40
0
VDD = 28 Vdc, IDQ = 610 mA
f1 = 2135 MHz, f2 = 2145 MHz
2-Carrier W-CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
TC = -30_C
ηD
25_C
85_C
IM3
-10
25_C -20
-30 _C
30
-30
ACPR
20
Gps
-40
-30 _C
25_C -50
85_C
10
IM3 (dBc), ACPR (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
-1 0
0
-60
1
10
100
200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
17
25_C
50
85_C
15
85_C
40
14
12
ηD
VDD = 28 Vdc
IDQ = 610 mA
f = 2140 MHz
30
20
11
10
1
10
100
200
IDQ = 610 mA
f = 2140 MHz
15
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
25_C
-30 _C 60
ηD, DRAIN EFFICIENCY (%)
TC = -30_C
16
13
16
70
Gps
14
13
12
32 V
28 V
VDD = 24 V
10
11
0
10
0
20
40
60
80
100
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
120
MRF6S21060NR1 MRF6S21060NBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
109
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
250
230
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 26%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
W-CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
0
-10
1
(dB)
PROBABILITY (%)
10
0.1
W-CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
-50
4
6
-70
-ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
-IM3 in
3.84 MHz BW
-80
-25
-2 0
-60
0.0001
2
-30
-40
0.001
0
-20
8
10
PEAK-T O-A VERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
-15
-10
-5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2‐Carrier W‐CDMA Spectrum
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
7
Zo = 10 Ω
f = 2110 MHz
Zload
f = 2110 MHz
Zsource
f = 2170 MHz
f = 2170 MHz
VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2110
7.59 - j8.39
3.31 - j5.35
2140
6.71 - j8.83
3.17 - j5.16
2170
5.84 - j8.62
3.06 - j4.92
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21060NR1 MRF6S21060NBR1
8
RF Device Data
Freescale Semiconductor
TD-SCDMA CHARACTERIZATION
R1
VBIAS
VSUPPLY
R2
C6
C1
C2
C3
Z9
C4
C5
Z17
RF
INPUT
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z10
Z11
Z12
Z13
Z14
Z15
Z8
Z16
RF
OUTPUT
C8
Z18
C7
DUT
VSUPPLY
C9
Z1
Z2
Z3*
Z4
Z5*
Z6
Z7
Z8
Z9
Z10
0.250″ x 0.080″ Microstrip
0.129″ x 0.080″ Microstrip
0.565″ x 0.258″ Microstrip
0.160″ x 0.080″ Microstrip
0.300″ x 0.455″ Microstrip
0.350″ x 0.080″ Microstrip
0.350″ x 0.755″ Microstrip
0.115″ x 0.755″ Microstrip
0.680″ x 0.080″ Microstrip
0.115″ x 1.000″ Microstrip
Z11
Z12*
Z13
Z14*
Z15
Z16
Z17
Z18
PCB
C10
C11
0.240″ x 1.000″ Microstrip
0.270″ x 0.360″ Microstrip
0.230″ x 0.080″ Microstrip
0.588″ x 0.290″ Microstrip
0.595″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
0.935″ x 0.080″ Microstrip
0.955″ x 0.080″ Microstrip
Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55
* Copper foil tape soldered onto PCB
Figure 16. MRF6S21060NR1(NBR1) Test Circuit Schematic — TD-SCDMA
Table 7. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values — TD-SCDMA
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
CDR33BX104AKYS
Kemet
C2, C7
4.7 pF Chip Capacitors
ATC100B4R7BT500XT
ATC
C3, C8, C9
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C4, C5, C6, C10, C11
10 μF, 35 V Chip Capacitors
GRM55DR61H106KA88L
Murata
R1
1 k, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 k, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
9
R1
C4
R2 C6
C1
C5
C3
C2
CUT OUT AREA
R3
C7
C8
C9
C10 C11
MRF6S21060N Rev. 3
Figure 17. MRF6S21060NR1(NBR1) Test Circuit Component Layout — TD-SCDMA
MRF6S21060NR1 MRF6S21060NBR1
10
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
0
30
3-Carrier TD-SCDMA
VDD = 28 V, IDQ = 555 mA
f = 2017.5 MHz
25
ηD
-2 0
20
Adj-U
-3 0
Adj-L
15
10
-4 0
Alt-L
-5 0
5
ηD, DRAIN EFFICIENCY (%)
ALT/ACPR (dBc)
-1 0
Alt-U
-60
0
0
2
1
3
4
5
6
7
8
9
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. 3-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
-1 8
25
ALT/ACPR (dBc)
-2 6
20
ηD
15
-3 4
Adj-U
Adj-L
-4 2
10
Alt-L
-5 0
5
ηD, DRAIN EFFICIENCY (%)
6-Carrier TD-SCDMA
VDD = 28 V, IDQ = 560 mA
f = 2017.5 MHz
Alt-U
-58
0
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. 6-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD-SCDMA TEST SIGNAL
-30
-30
1.28 MHz
Channel BW
-40
-50
-50
-60
-70
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
-AL T2 in
1.28 MHz BW
-3.2 MHz Offset
-80
(dBm)
(dBm)
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
-60
-70
-90
-100
-100
-1 10
-AL T2 in
1.28 MHz BW
-3.2 MHz Offset
-80
-90
-120
1.28 MHz
Channel BW
-40
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
-1 10
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
-AL T1 in
1.28 MHz BW
-1.6 MHz Offset
-130
-120
-130
Center 2.0175 GHz
1.5 MHz
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3-Carrier TD-SCDMA Spectrum
-AL T1 in
1.28 MHz BW
-1.6 MHz Offset
Center 2.0175 GHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
2.5 MHz
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6-Carrier TD-SCDMA Spectrum
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
11
Zo = 10 Ω
Zload
f = 1950 MHz
f = 2070 MHz
f = 2070 MHz
f = 1950 MHz
Zin
VDD = 28 Vdc, IDQ = 560 mA
Zin
f
MHz
Zin
W
Zload
W
1950
2.227 - j9.127
3.341 - j8.372
1960
2.168 - j8.942
3.239 - j8.218
1970
2.124 - j8.757
3.168 - j8.084
1980
2.073 - j8.606
3.083 - j7.966
1990
2.031 - j8.447
3.009 - j7.865
2000
1.987 - j8.306
2.929 - j7.743
2010
1.940 - j8.155
2.845 - j7.639
2020
1.911 - j8.000
2.775 - j7.529
2030
1.891 - j7.835
2.696 - j7.410
2040
1.856 - j7.711
2.615 - j7.309
2050
1.831 - j7.589
2.549 - j7.207
2060
1.808 - j7.461
2.479 - j7.086
2070
1.782 - j7.325
2.422 - j6.983
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 22. Series Equivalent Input and Load Impedance — TD-SCDMA
MRF6S21060NR1 MRF6S21060NBR1
12
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
13
MRF6S21060NR1 MRF6S21060NBR1
14
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
15
MRF6S21060NR1 MRF6S21060NBR1
16
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
17
MRF6S21060NR1 MRF6S21060NBR1
18
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
4
Dec. 2006
Description
• Added “TD-SCDMA” to data sheet description, p. 1
• Updated Part Numbers in Table 7, Component Designations and Values, to RoHS compliant part numbers,
p. 4
• Added TD-SCDMA test circuit schematic, component designations and values, component layout, typical
characteristic curves, test signal and series impedance, p. 9-12
• Added Product Documentation and Revision History, p. 17
5
Dec. 2008
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 220°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Updated PCB information to show more specific material details, Figs. 1, 16, Test Circuit Schematic,
p. 3, 9
• Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant
part numbers, p. 3, 9
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Replaced Case Outline 1486-03, Issue C, with 1486-03, Issue D, p. 13-15. Added pin numbers 1 through
4 on Sheet 1.
• Replaced Case Outline 1484-04, Issue D, with 1484-04, Issue E, p. 16-18. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
19
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MRF6S21060NR1 MRF6S21060NBR1
Document Number: MRF6S21060N
Rev. 5, 12/2008
20
RF Device Data
Freescale Semiconductor